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81.
82.
Scanning tunneling microscopy (STM) studies on poly(Zinc-tetraphenylporphyrin) (poly(ZnTPP)) and poly(Zn- or Pt-tetradimethoxyphenylporphyrins) (poly(Zn8OMeTPP) or poly(Pt8OMeTPP)) deposited through anodic oxidation on platinum surfaces are reported. STM investigations on these metalloporphyrin films were conducted to obtain informations on the supramolecular architecture of these polymers. These STM images indicate that poly(ZnTPP) covered the metallic electrode with a layered structure. For poly(Zn8OMeTPP) and poly(Pt8OMeTPP) a tendency to form regular molecular assemblies is obvious. 相似文献
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84.
J. M. Slaughter R. W. Dave M. DeHerrera M. Durlam B. N. Engel J. Janesky N. D. Rizzo S. Tehrani 《Journal of Superconductivity》2002,15(1):19-25
Developments in portable communication and computing systems are creating a growing demand for nonvolatile random access memory that is dense and fast. None of the existing solid-state memories can provide all the needed attributes in a single memory solution. Therefore, to achieve the required multiple functionality requirements, a number of different memories are being used while compromising performance and adding cost to the system. Magnetoresistive Random Access Memory (MRAM) has the potential to replace these memories in various systems with a single, universal memory solution. Key attributes of MRAM technology are nonvolatility and unlimited read and write endurance. In addition, MRAM can operate at high-speed and is expected to have competitive densities. In this paper we describe several fundamental technical and scientific aspects of MRAM with emphasis on recent accomplishments that enabled our successful demonstration of a 256 kbit memory chip. 相似文献
85.
综合录井仪的电磁干扰及其抑制 总被引:1,自引:1,他引:0
该文在分析综合录井仪电磁环境的基础上,介绍了构成综合录井仪电磁干扰的基本要素及其抑制方法,系统阐述了SLZ综合录井仪设计生产中抑制干扰的措施。 相似文献
86.
L. Weeks L. K. Thompson† J. G. Shapter† K. J. Pope‡ & Z. Xu† 《Journal of microscopy》2003,212(2):102-106
The scanning tunnelling microscopy imaging of [3 × 3] Mn(II) nonanuclear grids on gold substrates is described. Self‐assembled behaviour is observed at both high and low coverage, with submolecular resolution of individual molecules displayed at low deposition concentrations. The importance of proper image processing techniques is demonstrated in resolving the layer structure at high coverage. 相似文献
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Cryogenic elastic plastic, J‐integral investigations on metallic materials often show negative crack extension values with respect to resistance curve J‐R. According to the present ASTM standard, the use of unloading compliance technique relies on the estimation procedure of the crack lengths during the unloading sequences of the test. The current standard, however, does not give any specific procedure for treating such negative data. To date, the applied procedure uses the shifting of the negative crack extension values either to the onset of the blunting line or to the offset of the resistance curve. The present paper represents a solution of the negative crack length problem on the basis of a mechanical evaluation procedure of the unloading slopes. The achieved progress using this evaluation technique is demonstrated on different materials such as cryogenic high toughness stainless steels, low carbon ferritic steel and aluminum alloys from the series of 7000 and 5000. In addition, this work deals with the crack tunnelling phenomenon, observed for high toughness materials, and shows the reduction of this crack extension appearance by using electro discharge machining (EDM) side groove technique. The differences between EDM processed side grooves and standard V‐notch machining have been investigated within these test series. 相似文献
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The in-plane molecular structures of octa-alkyl substituted copper phthalocyanine LB films deposited on graphite have been resolved with a scanning tunnelling microscope (STM). The face-to-face stacking of Pc macrocycles has been observed in the topographies of R8PcCu monolayers. The stacking period was found to be 3.8–4 Å and the molecular rows were separated by 19 Å and 16 A for (C6H13)PcCu and (C5H11)PcCu respectively. 相似文献