降低环氧模塑料应力方法及对封装分层的影响

半导体封装过程中,热应力是导致封装过程中器件分层的主要原因之一,主要研究如何降低环氧模塑料(Epoxy Molding Compound,EMC)的应力,以及降低应力对环氧模塑料分层的影响。通过对多组不同原材料比例做试验,并在试验数据的基础上进行分析对比,合适的填料含量和应力吸释剂可以有效降低环氧模塑料的应力,从而减少分层或避免分层的发生。在SOIC20L上通过JECDECMSL/260C的可靠性考核,没有任何分层。总之,EMC7(D应力吸释剂)是最好的,在SOIC20L上能够通过MSL3/260C的可靠性考核,达到0分层。     

Emulation-based transient thermal modeling of 2D/3D systems-on-chip with active cooling

State-of-the-art devices in the consumer electronics market are relying more and more on Multi-Processor Systems-On-Chip (MPSoCs) as an efficient solution to meet their multiple design constrains, such as low cost, low power consumption, high performance and short time-to-market. In fact, as technology scales down, logic density and power density increase, generating hot spots that seriously affect the MPSoC performance and can physically damage the final system behavior. Moreover, forthcoming three-dimensional (3D) MPSoCs can achieve higher system integration density, but the aforementioned thermal problems are seriously aggravated. Thus, new thermal exploration tools are needed to study the temperature variation effects inside 3D MPSoCs. In this paper, we present a novel approach for fast transient thermal modeling and analysis of 3D MPSoCs with active (liquid) cooling solutions, while capturing the hardware-software interaction. In order to preserve both accuracy and speed, we propose a close-loop framework that combines the use of Field Programmable Gate Arrays (FPGAs) to emulate the hardware components of 2D/3D MPSoC platforms with a highly optimized thermal simulator, which uses an RC-based linear thermal model to analyze the liquid flow. The proposed framework offers speed-ups of more than three orders of magnitude when compared to cycle-accurate 3D MPSoC thermal simulators. Thus, this approach enables MPSoC designers to validate different hardware- and software-based 3D thermal management policies in real-time, and while running real-life applications, including liquid cooling injection control.     

Triphenyl phosphine oxide-bridged bipolar host materials for green and red phosphorescent organic light-emitting diodes

Two wide band gap functional compounds of phenylbis(4-(spiro [fluorene-9,9'-xanthen]-2-yl)phenyl)phosphine oxide (2SFOPO) and (4-(9-ethyl-9H- carbazol-3-yl)phenyl)(phenyl)(4-(spiro[fluorene-9,9′-xanthen]-2-yl)phenyl)phosphine oxide (SFOPO-CZ) were designed, synthesized and characterized. Their thermal, photophysical, electrochemical properties and device applications were further investigated to correlate the chemical structure of bipolar host materials with the electroluminescent performance for phosphorescent organic light-emitting diodes (PhOLEDs). Both of them show high thermal stability with glass transition temperatures in a range of 105–122 °C and thermal decomposition temperatures at 5% weight loss in a range of 406–494 °C. The optical band gaps of compound 2SFOPO and SFOPO-CZ in CH₂Cl₂ solution are 3.46 and 3.35 eV, and their triplet energy levels are 2.51 eV and 2.52 eV, respectively. The high photoluminescent quantum efficiency of emissive layer of doped green device up to 50% is obtained. Employing the developed materials, efficient green and red PhOLED in simple device configurations have been demonstrated. As a result, the green PhOLEDs of compound SFOPO-CZ doped with tris(2-phenylpyridine) iridium shows electroluminescent performance with a maximum current efficiency (CE_max) of 52.83 cd A⁻¹, maximum luminance of 34,604 cd/m², maximum power efficiency (PE_max) of 39.50 lm W⁻¹ and maximum external quantum efficiency (EQE_max) of 14.1%. The red PhOLED hosted by compound 2SFOPO with bis(2-phenylpyridine)(acetylacetonato) iridium(III) as the guest exhibits a CE_max of 20.99 cd A⁻¹, maximum luminance of 33,032 cd/m², PE_max of 20.72 lm W⁻¹ and EQE_max of 14.0%. Compound SFOPO-CZ exhibits better green device performance, while compound 2SFOPO shows better red device performance in PhOLEDs.     

Thermal sensor allocation for 3DICs using three dimensional thermal sensors

Stacking active layers leads to increased power density and overall higher temperatures in a three dimensional integrated circuit (3DIC). Thermal sensors are therefore crucial for run-time thermal management of 3DICs. A thermal sensor allocation method customized for 3DICs that utilizes ring oscillator based 3D sensors is introduced in this paper. A new 3D thermal map modeling method that facilitates efficient and very fast analyses is embodied in this thermal sensor distribution algorithm. Our results indicate that for a 4-layer stacked 3DIC, consisting of two layers of quad-core processors and one layer of L2 cache and one layer of main memory, less than 3.58% in maximum sensor reading error can be accomplished with a 53× speedup in the thermal evaluation time and thermal sensor distribution algorithm implementation.     

Thermal modelling of Ohmic heating microreactors

This paper describes the static and transient thermal modelling of an Ohmic heating microreactor for biological sample processing for the purpose of genetic analysis. Precise thermal management can be used for the effective preparation of analyte DNA molecules prior to detection. Due to the small dimensions of the microreactor, the direct measurement and monitoring of the temperature distribution presents a challenge. To overcome this, thermal modelling has been used to accurately predict the thermal behaviour of the microreactor and sample component. It is further possible to calculate the required input power levels and provide design criteria to optimise the design of the microreactor.     

Thermal characterisation of power devices during transient operation

An experimental infrared method for the thermal characterisation of semiconductor devices during fast transient operation, in the range from a few microseconds and up to some milliseconds, is presented. The features which make it suitable and convenient, particularly for use with power electronics applications are pointed out; its time and space resolution are illustrated by means of properly chosen examples. The considered solution qualifies as a very versatile and powerful tool in many diverse lines of investigation.     

Physical study of the dissipated power area in high electron mobility transistors for thermal modelling

The hot area in power transistors due to the power dissipation is determined from a 2D-hydrodynamic model. The power is calculated everywhere in the device from the knowledge of the physical quantities (current density, electric field). The hot area is determined accurately to be coupled to a thermal modelling giving the temperature everywhere in the device [J. Park, M.-W Shin, C.-C. Lee, Thermal modeling and measurement of GaN-based HFET devices, IEEE Electron Device Lett. 24(7) (2003) 424-426 [1]; J.-C Jacquet, R. Aubry, H. Gérard, E. Delos, N. Rolland, Y. Cordier, A. Bussutil, M. Rousseau, S.L. Delage, Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement, 12th GAAS Symposium, Amsterdam, 2004, pp. 235-238 [2].]. The method is applied to HEMTs (high electron mobility transistors) based on GaAs or GaN. It is shown that the hot area depends on the bias conditions and on the transistor gate recess topology.     

影响热粘合非织造布性能的因素分析

本文通过利用热粘合法的２００ｇ／ｍ＾２非织造布的初中及理论分析，阐述了热熔法的热粘合机理，并利用正交试验就工艺参数的变化对非织造布性能的影响作了分析，探索了厚型功能型热粘合非织造布生产的可能性，并且得出了结论对生产实践具有一定的指导意义。     

Indoline-based donor molecule for efficient co-evaporated organic photovoltaics

We demonstrated the use of an asymmetrical donor–acceptor-type indoline dye—D131, developed for dye-sensitized solar cells, as an electron donor and fullerene C₇₀ as an electron acceptor for thermal co-evaporated bulk-heterojunction organic solar cells (OSCs). In spite of the presence of intermolecular hydrogen bonds among D131 molecules, they can be thermally evaporated in high vacuum at a relatively low temperature of 220 °C. The blend ratio and thickness of the active layer of D131/C₇₀ blend films in OSCs were optimized to achieve a maximum power-conversion efficiency of 4.5% with a short-circuit current of 9.1 mA cm^?2, an open-circuit voltage of 0.89 V, and a fill factor of 0.56 under AM 1.5G solar illumination (100 mW cm^?2), which is the best value reported so far for OSCs based on indoline-based donor materials.     

Investigation of thermal effects on the single-finger heterojunction bipolar transistors

We will first derive a physics-based, analytical single-finger heterojunction bipolar transistor (HBT) model which takes into account the thermal effect. Next, the model is used to calculate the three figures of merit of HBT, i.e., current gain, cut-off frequency and maximum frequency. Their variation against the collector current density under the influence of thermal effect is presented and the calculation results are discussed.