图像编码中的容错方法分析

随着信息社会的到来,互联网以及正在迅速发展的移动通信技术,逐渐成为人们获取信息的中心。而这些信息的传输都必须由具有较强鲁棒性的压缩数据来保证。所以,在有干扰的信道中如何保护传输的压缩数据不受干扰成为人们关注的问题。针对现代信息中的最主要的图像数据的传输问题,对一些差错控制方法,特别是在JPEG2000及MPEG-4标准中所采用的新的容错工具和方法进行了较详细地分析。     

橡塑磁条在永磁音像微特电机中的应用

本文简述了橡塑磁条的制造工艺及在永磁音像电机规模生产中的应用，与铁氧体烧结磁环进行比较，阐述了橡塑磁条在音像微特电机中使用的优势。     

Windows 2000终端技术的研究

Windows 2000终端是一项能降低用户“总体拥有成本”的技术，并且能为无法运行Windows 2000的计算机提供访问Windows桌面的能力。本文介绍了Windows 2000终端技术原理和Windows 2000终端网络架构，并论述了建立高效实用Windows 2000终端的方法。     

Structural and electrochemical properties of vanadium oxide thin films grown by d.c. and r.f. reactive sputtering at room temperature

Vanadium oxide thin films were grown at room temperature by direct current and radio-frequency reactive sputtering systems to compare the structural and electrochemical properties. Rutherford backscattering spectrometry and Fourier transform infrared measurements reveal that the composition of the as-deposited films consists of the V₂O₅ phase regardless of the deposition methods. Wide-angle X-ray diffraction measurements show that the crystallinity of the as-deposited V₂O₅ films is different depending on the deposition method. Films deposited by direct current reactive sputtering were amorphous, whereas films deposited by radio-frequency reactive sputtering were crystalline. Scanning electron microscopy measurements show that the V₂O₅ films grown by radio-frequency reactive sputtering had a large grain size but the films grown by direct current reactive sputtering were amorphous. Charge–discharge measurements taken at room temperature with a constant current clearly indicate that the films grown by direct current sputtering demonstrated typical amorphous behavior, whereas the V₂O₅ films grown by radio-frequency sputtering demonstrated the discharge behavior of crystalline V₂O₅. The origin of the structural and electrochemical properties of film grown by radio-frequency reactive sputtering is a self-bias effect. The self-bias effect induces ion bombardment during the growth of vanadium oxide thin film. These results suggest that direct current reactive sputtering is more desirable for growing amorphous V₂O₅ thin film than radio-frequency reactive sputtering.     

钛合金双辉离子无氢渗碳中的离子绕射现象

针对钛合金耐磨性差、易产生氢脆的特性,以格栅状高纯度固体石墨做源极,钛合金Ti6A14V做阴极,氩气作为工作气体,依靠辉光放电和空心阴极效应在Ti6A14V表面制备渗碳合金层;X射线衍射和辉光放电光谱试验显示,合金层由高硬度相TiC及游离态减磨C相组成;渗层内C元素的含量呈梯度分布;表面硬度大幅度提高.由表及里硬度梯度降低;反复试验表明,试样周围高浓度、稳定的渗碳气氛对形成理想的渗碳效果是非常重要的.     

Microstructure developed in the surface layer of Ti-6Al-4V alloy after sliding wear in vacuum

Microstructural changes in the surface layer of Ti-6Al-4V alloy after sliding wear in vacuum have been studied by means of scanning and transmission electron microscopy (SEM and TEM). The wear rates of Ti-6Al-4V alloy in vacuum were measured under different sliding velocities and loads. The experimental results showed that a severely deformed layer with a grain size of 50–100 nm and thickness about 70 μm was formed underneath the worn surface. Under the slower sliding velocities, the substructure of the layer had a high dislocation density, while under higher sliding velocities, twins were found to exist in the substructure. A process by which the deformed layer formed has been proposed and the deformation of materials at the contacting spots of the Ti-6Al-4V sample is discussed.     

Annealing process of fine grained co-stabilised (Y,Mg)-PSZ/MgAl2O4 ceramics

Abstract

Co-stabilised (Y,Mg) partially stabilised zirconia (PSZ) ceramics with MgAl₂O₄ spinel additions were produced, with industrial zirconia as the main starting material. Powders were prepared using a mechanical milling–mixing process. The effect of the annealing process on the mechanical properties, phase compositions, and microstructure of fine grained PSZ ceramics was investigated.     

Development and Characterization of a Factor V-Deficient CRISPR Cell Model for the Correction of Mutations

Factor V deficiency, an ultra-rare congenital coagulopathy, is characterized by bleeding episodes that may be more or less intense as a function of the levels of coagulation factor activity present in plasma. Fresh-frozen plasma, often used to treat patients with factor V deficiency, is a scarcely effective palliative therapy with no specificity to the disease. CRISPR/Cas9-mediated gene editing, following precise deletion by non-homologous end-joining, has proven to be highly effective for modeling on a HepG2 cell line a mutation similar to the one detected in the factor V-deficient patient analyzed in this study, thus simulating the pathological phenotype. Additional CRISPR/Cas9-driven non-homologous end-joining precision deletion steps allowed correction of 41% of the factor V gene mutated cells, giving rise to a newly developed functional protein. Taking into account the plasma concentrations corresponding to the different levels of severity of factor V deficiency, it may be argued that the correction achieved in this study could, in ideal conditions, be sufficient to turn a severe phenotype into a mild or asymptomatic one.     

Genomic Insights of First ermB-Positive ST338-SCCmecVT/CC59 Taiwan Clone of Community-Associated Methicillin-Resistant Staphylococcus aureus in Poland

We report the first Polish representative of community-associated methicillin-resistant Staphylococcus aureus (CA-MRSA), lukS/F-PV-positive, encoding the ermB gene, as a genetic determinant of constitutive resistance to macrolides, lincosamides, and streptogramin B antibiotics, cMLS-B. This is the first detection of the CA-MRSA strain responsible for nosocomial infection in the Warsaw Clinical Hospital. Resistance to β-lactams associates with a composite genetic element, SCCmec cassette type V_T (5C2&5). We assigned the strain to sequence type ST338 (single-locus variant of ST59), clonal complex CC59, spa-type t437, and agr-type I. Genomic-based comparison was designated SO574/12 as an international Taiwan clone, which has been so far described mainly in the Asia-Pacific region. The ermB gene locates on the chromosome within the 14,690 bp mobile element structure, i.e., the MES_PM1-like structure, which also encodes aminoglycoside- and streptothricin-resistance genes. The MES_PM1-like structure is a composite transposon containing Tn551, flanked by direct repeats of IS1216V insertion sequences, which probably originates from Enterococcus. The ermB is preceded by the 273 bp regulatory region that contains the regulatory 84 bp ermBL ORF, encoding the 27 amino acid leader peptides. The latest research suggests that a new leader peptide, ermBL2, also exists in the ermB regulatory region. Therefore, the detailed function of ermBL2 requires further investigations.     

Synthesis,In Vitro,and Computational Studies of PTP1B Phosphatase Inhibitors Based on Oxovanadium(IV) and Dioxovanadium(V) Complexes

One of the main goals of recent bioinorganic chemistry studies has been to design and synthesize novel substances to treat human diseases. The promising compounds are metal-based and metal ion binding components such as vanadium-based compounds. The potential anticancer action of vanadium-based compounds is one of area of investigation in this field. In this study, we present five oxovanadium(IV) and dioxovanadium(V) complexes as potential PTP1B inhibitors with anticancer activity against the MCF-7 breast cancer cell line, the triple negative MDA-MB-231 breast cancer cell line, and the human keratinocyte HaCaT cell line. We observed that all tested compounds were effective inhibitors of PTP1B, which correlates with anticancer activity. [VO(dipic)(dmbipy)]·2 H₂O (Compound 4) and [VOO(dipic)](2-phepyH)·H₂O (Compound 5) possessed the greatest inhibitory effect, with IC₅₀ 185.4 ± 9.8 and 167.2 ± 8.0 nM, respectively. To obtain a better understanding of the relationship between the structure of the examined compounds and their activity, we performed a computer simulation of their binding inside the active site of PTP1B. We observed a stronger binding of complexes containing dipicolinic acid with PTP1B. Based on our simulations, we suggested that the studied complexes exert their activity by stabilizing the WPD-loop in an open position and limiting access to the P-loop.