Cognitive Operations in the Generation Effect on a Recall Test: Role of Aging and Divided Attention.

Generation effect (generated words are better memorized than read words) of anagrams, rhymes, and associates of target words was examined in young, elderly, and very old subjects. Experiments 1 and 2 showed that only young subjects benefit from the generation effect in a free-recall test when the rule is of a phonological nature. Experiments 3, 4, and 5 showed that the generation effect of rhymes was due to a resources-dependent self-initiated process. Experiments 4 and 5 showed that in a divided-attention situation, generation effect of rhymes is not significant in young subjects, but that the generation effect of semantic associates remains significant for both groups (Experiment 5). The results are discussed within the environmental support framework and the transfer-appropriate processing framework. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

固体中光声拉曼效应的理论分析

从非线性波动方程出发，运用准平衡模型以及热弹理论，对固体样品中光声拉曼效应进行理论分析，导出了脉冲激光泵浦下光声拉曼信号的解析表达式，并总结分析了固体中光声拉曼效应的一些原理特性、实验问题和应用价值。     

苏北及邻区前志留基础层的综合地球物理研究

在前新生代油气资源选区评价中，前志留面之下未变质沉积地层（简称前志留基础层）的分布具有重要的参考价值。从提高纵向分辨率的处理和反演技术的应用入手，结合约束条件,利用大地电磁测深数据反演,揭示前志留面等界面的埋深和分布；同时应用小波分析技术，从磁场中分解出区域磁异常，反演结晶基底的埋深。通过这2个界面埋深的差异来分析前志留基础层的分布     

Properties of Quaternary Alloy Magnetic Semiconductor (InGaMn)As Grown on InP

We have studied properties of quaternary alloy magnetic semiconductor (InGaMn)As grown on InP substrates by low-temperature molecular-beam epitaxy (LT-MBE). A large MCD peak whose intensity is larger than 500 mdeg for (InGaMn)As was observed. This peak intensity was about three times larger than that of typical (GaMn)As films. Relatively high Curie temperature of 83 K of [(In_0.53Ga_0.47)_0.88Mn_0.12]As was observed by Hall measurements. The carrier concentration of [(In_0.53Ga_0.47)_0.88Mn_0.12]As was estimated to be more than 1.0 × 10²¹ cm^–3 by using the Curie–Weiss fitting of the Hall coefficient R _H, indicating that more than 40% of Mn atoms are activated. This means that (InGaMn)As has a higher activation ratio of Mn as acceptors than (GaMn)As.     

Extremes of random fields over arbitrary domains with application to concrete rupture stresses

To find the exact probability distribution of the global maximum or minimum of a random field within a bounded domain is a pending problem even for Gaussian fields. Except for very special examples of fields, recourse must be taken to approximate reasoning or asymptotic considerations to be judged with respect to accuracy by simulations. In this paper, the problem is addressed through a functional equation that leads to the definition of a class of distribution functions that depend solely on process or field characteristics and domain quantities that can be calculated explicitly. This distribution function class is studied for Gaussian processes in earlier works by the author and it has been obtained explicitly for Gaussian fields on rectangular domains in the plane. Simulation studies show that rather good predictions are obtained for sufficiently smooth wide band Gaussian processes and fields. In this paper, the distribution function is obtained in general for Gaussian fields over arbitrary bounded domains with piecewise continuous and differentiable boundaries, and as in earlier works the distribution function is tested against empirical distribution functions obtained by simulation of sample functions of a smooth approximately Gaussian field, herein called a broken line Hino field. For completeness this particular field type is defined in appendix a and appendix b. The paper concludes with a statistical application on data for plain concrete tensile strength.     

Free energy and confinement force of macromolecules in a slit at full equilibrium with a bulk solution

Nondilute athermal and theta solutions of nonadsorbing flexible macromolecules in equilibrium with repulsive slit-like pores were examined by the lattice Monte Carlo simulations. The free energy of confinement ΔA/kT and the force f/kT exerted by polymers on the slit were computed as a function of the slit width D in a wide range of bulk concentrations φ. The free energy and force profiles in nondilute solutions were found to deviate considerably from the ideal chain theory; the perturbation of chains by a presence of the slit walls were substantially reduced in nondilute solutions. The free energy and force functions appropriate for nondilute solutions were derived by fitting the simulation data. Further, the relative pressure p_I/p_E exerted by the nonadsorbing confined molecules on the slit walls was calculated. The depletion effect relevant to colloid stabilization was found in dilute solutions to be slightly weaker for excluded-volume chains than for ideal chains. The relative pressure equation was modified to cover semidilute solutions, by using the mean-field and scaling expressions of the osmotic pressure. Both the relative pressure p_I/p_E and the intra-slit concentration profiles φ_I(x) in tandem display a suppression of the depletion effect with increasing φ in simidilute solutions.     

Simon-Type Effects: Chronometric Evidence for Keypress Schemata in Typewriting.

In 4 experiments, chronometric evidence for keypress schemata in typing was sought by presenting stimuli to be typed in positions that were displaced from a central fixation point. Reaction times were shorter when stimulus positions corresponded to keyboard locations of the letters to be typed, suggesting that position was an important part of the internal representation of the response. Experiment 1 presented single letters left and right of fixation. Experiment 2 presented single letters above and below fixation. Experiment 3 presented words left and right of fixation and found evidence of parallel activation of keypress schemata. Experiment 4 found no effect of the eccentricity of the keyboard locations and responding fingers, suggesting that response-location codes are categorical, not metric. The results are consistent with D. E. Rumelhart and D. A. Norman's (1982) theory of typewriting. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Electron transport in InGaO3(ZnO)m (m=integer) studied using single-crystalline thin films and transparent MISFETs

We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO₃(ZnO)_m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 10⁵. The field-effect mobility increased from ∼1 to ∼10 cm² (V s)⁻¹ as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds.     

多模干涉型集成光学器件研究进展

基于自镜像效应(SIE)的多模干涉(MMI)型集成光学器件是集成光学中具有广泛用途的重要器件。本文详细而系统地综述了近几年来MMI器在国内外的研究进展，特别是其在集成光学中的应用。