煤炭企业管理的激励方式及运用

本文介绍了煤炭企业管理的激励方式以及激励机制的具体运用。     

基于小波分析的车型识别

本文论述了用小波分析提取车辆图像边缘信号的方法，得到了连续、光滑的边缘图像，并将其应用于公路车辆车型的检测与识别系统中，实验表明识别过程准确、速度快，具有较好的应用前景。     

泌阳凹陷层序地层样式和油气评价

在建立泌阳凹陷层序序列的基础上，系统研究了核桃园组的旋回结构。考虑箕状盆地结构、构造活动特征以及沉积物供源方式。分别论述了盆地陡坡、深凹和缓坡的层序地层样式，指出不同地形区的层序地层叠置样式主控因素是有差异的。综合层序地层学和石油地质分析结果，提出了岩性油气藏勘探的有利区带。     

C/C + +源代码风格检测工具的实现

文中给出了评价C／C 源代码风格的规则分类和检查工具的总体结构，阐述了代码检查工具的核心技术——扩展词法分析和扩展语法分析，给出了代码检测工具的应用实例。     

防霉建筑涂料的研究与施工使用

针对国内外防霉建筑涂料存在的问题，研制开发了以合成树脂为主要成膜物质，加入环保性杀菌防霉剂及具有防腐霉的功能性颜填料，再配以树脂固化剂等成分配制而成的高性能防霉建筑涂料，并指出该涂料防霉效果良好。     

永久式防倒灌隔水采油工艺在长庆油田的应用

长庆油田存在严重的套管腐蚀损坏,采取的主要治理措施是隔水采油工艺技术。原有隔水采油工艺存在隔采周期短、检泵时水层倒灌污染油层、多次隔采后坐封难度大等问题,为此,试验应用了永久式防倒灌隔水采油工艺。现场试验、应用表明,该工艺具有隔采成功率高、隔采周期长等优点,能有效防止检泵时上部水层倒灌污染油层,具有很好的应用价值和推广前景。     

建筑砖砌体裂缝产生的因素及控制措施

根据温度变化、对砖墙体在地基不均匀沉降、材料自身、施工经验、建筑设计所引起的各种裂缝进行分析研究，并提出控制的措施和建议。     

高层医院建筑设计探讨——厦门第一医院病房楼

本文通过设计实践探讨了高层医院建筑的相关问题。     

Parametric study of the electrical to thermal power conversion in an inductively coupledrf plasma torch

An inductively coupled (ic) radio-frequency (rf) stabilized argon plasma was generated in a quartz tube using a 7 MHzrf generator. The electrical and thermal powers were measured and the efficiency of energy conversion was computed. The results indicate that for a constant power input, there is an optimum argon flow rate for which maximum energy conversion efficiency occurs.     

Transistors made in laser recrystallized polysilicon on insulator films

lpcvd polycrystalline silicon films were deposited on thermally oxidized silicon as well as onlpcvd silicon nitride deposited on silicon. Acw argon ion laser was used to recrystallize the polysilicon film into large grains (grain size from 5μm to 40μm). Boron was then implanted and standard N-channel silicon gate process and N-channel metal gate process were carried out to realisemosfets on this material. Channel mobilities upto 450 cm²/V-sec for electrons have been measured. This thin filmmosfet has a four-terminal structure with a top and a bottom gate and the influence of one gate on the drain current due to the other gate has been investigated. Comparison of theI _D v-V _D curves of the devices with physical models was found in good agreement.