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281.
282.
An HIP compact of MA-processed powder having a nominal composition of Ti-48at.% Al was produced. The compact consisted of a large amount of TiAl(λ) and a small amount of Ti3Al (2), in a completely ultra-fine equiaxed grain structure. This two-phase compact showed typical superplastic deformation behaviour. A maximum elongation of 550% was obtained. A strain exponent, n = 2, and grain size exponent, p = 2, were determined from the results of a strain-rate-change test and a creep test at constant initial stress using samples having various grain sizes, respectively. The activation energy for creep, Qc at constant stress was calculated to be 350 kJ/mole. It is concluded that the superplastic deformation mechanism of the material under study is grain boundary sliding controlled by lattice diffusion in the TiAl phase. 相似文献
283.
284.
单晶空心叶片用AC-2陶瓷型芯的组织和性能研究 总被引:8,自引:1,他引:7
利用扫描电镜技术和X射线衍射技术研究了AC-2氧化铝基陶瓷型芯的微观结构和相组成,并测试了该型芯的室温和高温性能,结果表明AC-2型氧化铝基陶瓷型芯的综合性能优于AC-1型芯。 相似文献
285.
随着计算机技术的发展和水平的提高,图像,声音,图形等多媒体信息逐步应用于管理信息系统之中。文章中提出了图文数据库系统设计中存在的三个基本问题。讨论了介绍了图文数据库系统的设计方法和实现技术。 相似文献
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287.
准噶尔盆地自成盆期以来经历了多期次构造运动,形成数个不整合。这些不整合在剖面上可分为5种类型,它们在地震上具有明显的反射特征。在纵向上,不整合分为3层结构,每层结构发育着多种岩石类型,它们在测井曲线组合上具各自不同的响应。不整合纵向的分层结构构成油气运移的双重通道,同时为油气聚集提供良好的储集空间和圈闭条件。尽管不整合的成藏条件有共同之处,但由于形成各类不整合时的应力强度、应力作用方式及地层变形程度等存在差异,导致不同类型的不整合还具有各自不同的油气成藏模式。 相似文献
288.
The homopolyester of 4-(4′-hydroxyphenoxy)benzoic acid (poly(4-HPBA)), was prepared under two different reaction conditions and compared with a sample provided by another research group. Depending on the synthetic route, different melting points, d.s.c. traces and crystal lattices were found. However, after repeated heating and cooling, one thermodynamically stable modification with a melting point of 370–375°C can be obtained. Copolyesters of 4-hydroxybenzoic acid and 4-(4′-hydroxyphenoxy)benzoic acid were prepared with various molar ratios either in the melt (condensation in bulk) or in solution. These copolyesters were characterized by elemental analyses, 1H n.m.r. spectroscopy, d.s.c. measurements, wide-angle X-ray scattering measurements at various temperatures, and optical microscopy. Whereas copolyesters prepared in solution do not melt below 500°C, those prepared by polycondensation in bulk show melting points down to approximately 260°C and form a nematic melt. 相似文献
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290.
The energies of various steps on the As-terminated GaAs(001)-2 × 4 surface are evaluated using a novel, approximate method of “linear combination of structural motifs”. It is based on the observation that previous total energy minimizations of semiconductor surfaces produced invariably equilibrium structures made of the same recurring local structural motifs, e.g. tetrahedral fourfold Ga, pyramidal threefold As, etc. Furthermore, such surface structures were found to obey consistently the octet rules as applied to the local motifs. We thus express the total energy of a given semiconductor surface as a sum of (i) the energies M of the local structural motifs appearing in the surface under consideration and (ii) an electrostatic term representing the Madelung energy of point charges resulting from application of the octet rule. The motif energies are derived from a set of pseudopotential total energy calculations for flat GaAs(001) surfaces and for point defects in bulk GaAs. This set of parameters suffices to reproduce the energies of other (001) surfaces, calculated using the same pseudopotential total energy approach. Application to GaAs(001)-2 × 4 surfaces with steps reveals the following. (i) “Primitive steps”, defined solely according to their geometries (i.e. step heights, widths and orientations) are often unstable. (ii) Additional, non-geometric factors beyond step geometries such as addition of surface adatoms, creation of vacancies and atomic rebonding at step edges are important to lower step energies. So is step-step interaction. (iii) The formation of steps is generally endothermic. (iv) The formation of steps with edges parallel to the direction of surface As dimers (A steps) is energetically favored over the formation of steps whose edges are perpendicular to the As dimers (B steps). 相似文献