Effect of sodium doping on graded Cu(In1−xGax)Se2 thin films prepared by chemical spray pyrolysis

In the present work we have studied the effect of Na on the properties of graded Cu(In_1−xGa_x)Se₂ (CIGS) layer. Graded CIGS structures were prepared by chemical spray pyrolysis at a substrate temperature of 350 °C on soda lime glass. Sodium chloride is used as a dopant along with metal (Cu/In/Ga) chlorides and n, n-dimethyl selenourea precursors. The addition of Na exhibited better crystallinity with chalcopyrite phase and an improvement in preferential orientation along the (112) plane. Energy dispersive analysis of X-rays (line/point mapping) revealed a graded nature of the film and percentage incorporation of Na (0.86 at%). Raman studies showed that the film without sodium doping consists of mixed phase of chalcopyrite and CuAu ordering. Influence of sodium showed a remarkable decrease in electrical resistivity (0.49–0.087 Ω cm) as well as an increase in carrier concentration (3.0×10¹⁸–2.5×10¹⁹ cm⁻³) compared to the un-doped films. As carrier concentration increased after sodium doping, the band gap shifted from 1.32 eV to 1.20 eV. Activation energies for un-doped and Na doped films from modified Arrhenius plot were calculated to be 0.49 eV and 0.20 eV, respectively. Extremely short carrier lifetimes in the CIGS thin films were measured by a novel, non-destructive, noncontact method (transmission modulated photoconductive decay). Minority carrier lifetimes of graded CIGS layers without and with external Na doping are found to be 3.0 and 5.6 ns, respectively.     

Charge injection in metal/organic/metal structures with ZnO:Al/organic interface modified by Zn1−xMgxO:Al layer

Aluminum-doped zinc oxide (ZnO:Al, AZO) electrodes were covered with very thin (∼6 nm) Zn_1−xMg_xO:Al (AMZO) layers grown by atomic layer deposition. They were tested as hole blocking/electron injecting contacts to organic semiconductors. Depending on the ALD growth conditions, the magnesium content at the film surface varied from x = 0 to x = 0.6. Magnesium was present only at the ZnO:Al surface and subsurface regions and did not diffuse into deeper parts of the layer. The work function of the AZO/AMZO (x = 0.3) film was 3.4 eV (based on the ultraviolet photoelectron spectroscopy). To investigate carrier injection properties of such contacts, single layer organic structures with either pentacene or 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine layers were prepared. Deposition of the AMZO layers with x = 0.3 resulted in a decrease of the reverse currents by 1–2 orders of magnitude and an improvement of the diode rectification. The AMZO layer improved hole blocking/electron injecting properties of the AZO electrodes. The analysis of the current-voltage characteristics by a differential approach revealed a richer injection and recombination mechanisms in the structures containing the additional AMZO layer. Among those mechanisms, monomolecular, bimolecular and superhigh injection were identified.     

Fully solution-processed and multilayer blue organic light-emitting diodes based on efficient small molecule emissive layer and intergrated interlayer optimization

Efficient and fully solution-processed blue organic light-emitting diodes (OLEDs) based on fluorescent small-molecule and methanol/water soluble conjugated polymer as electron-injection material are reported. The emitting layer is 3,6-bis(9,9,9′,9′-tetrakis (6-(9H-carbazol-9-yl)hexyl)-9H,9′H-[2,2′-bifluoren]-7-yl)dib-nzo[b, d]thiophene 5, 5-dioxide (OCSoC) with a blue-fluorescent small-molecule, and a methanol/water soluble polymer poly[(9,9-bis(30-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctyl-fluorene)] (PFN) acted as electron-injection layer (EIL). All the organic layers are spin-coated from solution. The multilayer device structure with emitting layer/electron-injection layer is achieved by solution-processed method without the dissolution problem between layers. The performances of the devices show that the maximum luminous efficiency of the multilayer device is increased about 43%, compared to the single-layer device. PFN acting as the EIL material plays a key role in the improvement of the device performance when used in solution-processed small-molecule OLEDs.     

测井资料在优选压裂层位中的应用

压裂是低孔、低渗油层改造的主要增产措施。根据常规测井资料、岩石物理实验分析数据及试油成果。研究储层四性关系，确定区块的低孔、低渗储层评价标准。进一步对油层进行分类，有针对性地为油层压裂提供施工层位和准确的储层参数。通过商543区块实例，阐述了选择压裂层位的方法。     

水泥浆失水制约下套管与井眼间隙的研究

通过对水泥浆失水规律的室内试验分析以厦对注水泥顶替过程中水泥浆失水桥堵套管与井眼间隙问题的研究，建立了顶替过程中滤失层不发生水泥浆失水而桥堵环形空间的临界失水量计算模型，提出了调配水泥浆失水性能和确定合理套管井眼间隙的具体方法，对注水泥现场施工和井身结构设计具有一定的指导意义。     

一种可替代漂珠的低密度材料

漂珠低密度水泥浆由于密度低、强度高、体系稳定而在油田低压易漏层及低压油气层长封固段固井作业中获得了广泛的应用。但近年来,由于漂珠的产量越来越少,油田低成本要求急需开发代替漂珠的新型减轻材料,以满足配制低密度水泥浆的需求。开发了BCL-10S低密度混合减轻材料,其物化性能与漂珠相当,用它作减轻剂配制的低密度水泥浆性能与用漂珠作减轻剂配制的低密度水泥浆性能相媲美,并已经在长庆油田获得了应用。     

湘中海相浅层湘冷1井酸压工艺研究及应用

湘冷1井具有气层埋藏浅（400m-500m）、纵向上裂隙发育的特点，属低孔、低渗的含泥质灰岩致密储层。大量室内实验和研究采用“前置液酸压＋闭合酸化”工艺技术，并优选了相应降阻酸和闭合酸配方。通过酸压实现了该井工业油气流的突破，取得了明显的增产效果，为新区海相浅层气的开发探索出了一套成熟的改造增产措施。     

低渗低温低压水敏性储气层压裂改造技术研究与应用

低渗低温低压水敏性储气层因压裂液快速破胶困难、黏土膨胀水敏伤害严重和压后压裂液返排动力不足等因素，使得压裂增产面临诸多难题。针对上述难题进行了技术攻关，形成了弱交联、低温活化剂与超量破胶剂的低温储层快速破胶技术、有机盐与无机盐双元体系复合防膨技术以及高比例液氮全程助排的排液技术。该压裂增产改造技术使牛101井头屯河组首次获得工业油气流，扩展了三塘湖盆地勘探空间。     

试油井选层压裂新工艺及现场试验

设计新型可洗井封隔器，保障油井有反洗井通道，有效防止封隔器以上砂埋所引发的管柱砂卡事故，并对新型封隔器、控制开关、密封接头、同心大通径压力计托筒等井下工具组合优化。解决了多层油井任意选层压裂、求产、测井温一体化的难题。     

高抗挤厚壁套管的性能及应用效果评价

中原油田套管损坏的主要原因是现有套管强度不够,无法抵抗盐膏层段的巨大外挤力。开发了TP130TT型高抗挤厚壁套管,其强度能很好地抵抗盐膏层巨大外挤力。实验室试验表明,各项性能指标达到了设计要求,现场使用取得了很好的效果,解决了中原油田盐膏层段套管强度不足的难题。