D2、M2、S5模具扁钢脱碳特性实验研究

开展了在空气和氮气两种气氛下,采用Gleeble-1500热模拟机与普通电炉两种热方式、不同加热温度、加热时间对D2、M2、S5钢脱碳层深度影响的试验研究。依据试验结果,结合现场实际制定了较为合理的生产工艺并在现场成功应用,使上述模具扁钢脱碳层指标达到了美国ASTM－A681技术标准。     

航天器地面供配电设备接口设计技术

航天器地面供配电设备必须要确保供电控制的可靠和测量的准确。概述了该设备的基本组成和功能，对设备和航天器之间的控制信息、状态信息和测量信息的接口设计技术作了较详细地论述，并且结合有代表性的示例给出了参考电路图和说明。     

RUSSIAN AND SOVIET CRYPTOLOGY III – SOVIET COMINT AND THE CIVIL WAR, 1918–1921

The importance of radio communications, both in controlling military forces and for purposes of intelligence collection, was recognized from the beginning by the new Soviet leaders in Russia. By January 1919, a radio intelligence service had been established in the Red Army, although shortages of equipment and comint personnel limited its operations during the civil war. Both sides in the civil war suffered from poor communications security.     

二层交换机的攻击分析与防范技术的研究

本文通过OSI模型的第二层的特点,分析了二层交换机存在的安全隐患,提出了相应的解决办法。     

Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B(CH3)3

Abstract

We have characterized the structure and electrical properties of p-type nanocrystalline silicon films prepared by radio-frequency plasma-enhanced chemical vapor deposition and explored optimization methods of such layers for potential applications in thin-film solar cells. Particular attention was paid to the characterization of very thin (～20 nm) films. The cross-sectional morphology of the layers was studied by fitting the ellipsometry spectra using a multilayer model. The results suggest that the crystallization process in a high-pressure growth regime is mostly realized through a subsurface mechanism in the absence of the incubation layer at the substrate-film interface. Hydrogen plasma treatment of a 22-nm-thick film improved its electrical properties (conductivity increased more than ten times) owing to hydrogen insertion and Si structure rearrangements throughout the entire thickness of the film.     

Atomic layer deposition of thin films of ZnSe—structural and optical characterization

Thin films of sphalerite-type ZnSe were grown by atomic layer deposition (ALD) from elemental Zn and Se precursors. These films, grown on various substrates, show bright blue ‘edge’ emission accompanied by donor-acceptor pair emissions in the blue, green and red spectral regions. Red, green and blue emissions mixed together give a white color, with a color temperature between 2400 and 4500 K depending on a layer thickness and temperature. ZnSe grown by ALD is in consequence a promising material for the fabrication of semiconductor-based white light emitting thin film electroluminescence displays.     

中厚板矫直过程中中性层偏移动态研究

研究中性层偏移对矫直力的影响,以提高矫直力精度。通过对矫直件三维弹塑性变形进行分析,提出中性层偏移理论,利用数值模拟和实验讨论中性层偏移的动态变化规律,说明中性层偏移是影响矫直力精度的重要因素之一,并验证了理论推导公式与数值计算结果之间的误差,为建立更为准确的矫直力模型提供理论基础和数据。     

30.4 nm Si/C多层膜反射镜的制备与测量

采用离子束溅射镀膜装置制备了一种新的材料组合Si/C多层膜 ,用于 30 4nm波段的正入射多层膜反射镜。并用软X射线反射率计测得其反射比最大值为 0 14。有效地抑制了 15 0nm处的二级衍射峰。     

Growth of calcium carbonate by the atomic layer chemical vapour deposition technique

Thin films of CaCO₃ (calcite) have been grown with the atomic layer chemical vapour deposition (ALCVD) technique, using Ca(thd)₂ (Hthd=2,2,6,6-tetramethylheptan-3,5-dione), CO₂, and ozone as precursors. Pulse parameters for the ALCVD-type growth are found and self-limiting reaction conditions are established between 200 and 400 °C. Calcium carbonate films have been deposited on soda-lime glass, Si(100), -Al₂O₃(001), -Al₂O₃(012), -SiO₂(001), and MgO(100) substrates. The observed textures were: in-plane oriented films with [100](001)CaCO₃ [100](001)Al₂O₃ and [100](001)CaCO₃[110](001)Al₂O₃ on -Al₂O₃(001), amorphous films on -Al₂O₃(012) when grown at 250 °C, and columnar oriented films on soda-lime glass, Si(001), -SiO₂(001), and MgO(100) substrates with (00l) and (104) parallel to the substrate plane at 250 and 350 °C, respectively. The film topography was studied by atomic force microscopy and AC impedance characteristics were measured on as-deposited films at room temperature. The films were found to be insulating with a dielectric constant (_r) typically approximately 8. Thin films of CaO were obtained by heat treatment of the carbonate films at 670 °C in a CO₂-free atmosphere, but the thermal decomposition led to a significant increase in surface roughness.     

Effect of Seed Layer on the Orientation of Zinc Oxide Film on Silicon Substrate

1. IntroductionZinc oxide films have been attracting more and moreattention because of their high diffractive index, low resis-tance, and photoluminescence properties, and are beingused as transparent electrodes, basis material for opti-cal wave guide devices, gas sensors and so on. Manymethods have been developed to prepare ZnO films, suchas chemical vapor deposition[1], reactive evaporation[2],pulsed laser ablation[3], sputtering[4], spray pyrolysis[5]and hydrothermal method[6]. There are a…