浮点FFT的VHDL实现

随着集成电路技术的发展,电子设计自动化逐渐成为重要的设计手段,已经广泛应用于数字电路和数字信号处理系统等许多领域.文中介绍了基于VHDL语言设计的浮点FFT,本设计采用基2算法,单精度32位二进制的浮点形式,主控制器采用状态机建模.整个设计利用Xilinx公司提供的先进的ISE 5.3系列软件,采用了先进的结构化设计思想.总设计通过了Modelsim仿真与验证,二十多个模块的代码覆盖率达到100%.实践结果表明,应用VHDL实现的FFT处理器可快速完成浮点数据快速傅式变换,代码覆盖率也表明系统的测试工作比较完备.该系统可扩展到16点,32点的浮点FFT运算.     

新型浮动板调制器用触发器的设计与实现

浮动板调制器在现代雷达发射机中得到广泛应用。新型浮动板调制器用触发器在低电位中采用了固定触发宽度及宽度跟随技术，在高电位中应用了多重隔离方法，解决了高电位定宽、高重复频率输出等关键技术。在多部雷达发射机上应用表明，电路设计合理，可广泛用于地面和机载雷达设备。     

广义克尔介质对双模压缩真空场与原子相互作用系统原子量子特性的影响

运用全量子理论,研究了存在广义克尔介质时,双模压缩真空场与二能级原子相互作用系统中原子布居数的时间演化和原子的偶极压缩效应,着重讨论了广义克尔介质与双模压缩真空场作用的耦合强度x,失谐量Ω以及广义克尔介质的非线性阶数m对原子行为的影响。     

新型差动输入CMOS电流传送器及其应用

基于P阱CMOS工艺提出了一种新的差动输入电流传送器。通过引入误差抑制负反馈电路,有效地减小了信号失真,拓宽了电路线性动态范围。文中还详细分析了电路性能,并由此指导电路的优化。给出的几个典型应用电路表明,与第二代电流传送器（CCII）相比,差动输入电流传送器的通用性更强,可获得较简洁的电路结构。本文最后设计了一个既可作为电流模式又可作为电压模式的MOSFET－C二阶滤波器。PSPICE模拟表明所提出的电路与其它同类电路相比具有更好的电路特性。     

Characterization of on-chip balun with patterned floating shield in 65 nm CMOS

A simple method of balun synthesis is proposed to estimate the balun structure in the operating frequency band.Then,a careful optimization is implemented to evaluate the estimated structure by a series of EM simulations. In order to investigate the impact of the patterned floating shield(PFS),the optimized baluns with and without PFS are fabricated in a 65 nm 1P6M CMOS process.The measurement results demonstrate that the PFS obviously improves the insertion loss(IL) in the frequency range and a linear improving trend appears smoothly.It is also found that the PFS gradually improves the phase balance as the frequency increases,while it has a very slight influence on the magnitude balance.To characterize the device’s intrinsic power transfer ability,we propose a method to obtain the baluns’ maximum available gain directly from the measured 3-port S-parameters and find that IL-comparison may not be very objective when evaluating the shielding effect.We also use the resistive coupling efficiency to characterize the shielding effect,and an imbalanced shielding efficiency is found though the PFS is perfectly symmetric in the measurement.It can be demonstrated that this phenomenon comes from the intrinsic imbalance of our balun layout.     

Low Power High-Speed Neuron MOS Digital-to-Analog Converters with Minimal Silicon Area

Digital-to-analog converts utilizing neuron MOS-transistors were designed. Different DACs were implemented and characterized in order to compare various topologies. Criteria to select structures were low power, fast performance and minimal silicon area. A basic 8-bit version is implemented with only one neuron MOS-transistor and eight capacitors. The silicon area of this D/A converter is only 0.04 mm² and the power consumption is 8.4 mW with conversion speed of 200 MS/s. An enhanced 8 and 10 bit versions utilizing neuron PMOS transistor and some extra circuitry are also proposed and tested. The silicon area of the enhanced 10 bit circuit is only 0.03mm² while the performance is as good as in the case of the basic version. The measured differential nonlinearity is 0.38 LSB and integral nonlinearity is 0.55 LSB for the enhanced 10 bit structure.     

饱和吸收体调Q的反转粒子数分析

从描述饱和吸收体调Ｑ的速率方程出发，推导出了实现有激发态吸收的饱和吸收体调Ｑ所需的反转粒子数理论上应满足的条件，并对其进行了讨论与分析，与参考文献的相关叙述相符。     

基于激光技术高炮模拟训练系统设计

运用二维浮动平台技术、传感器技术、激光技术等研制新一代高炮激光模拟实弹系统。实时采集火炮转动瞄准的方位角、射角和向量式瞄准具的相应工作参数。将瞄准具的工作参数转换为射弹飞行时间,计算出火炮发射时的高角,通过浮动式控制平台控制激光发射器消除高角和提前量角,等待射弹飞行时间以后发射激光,完成激光在空间和时间上对炮弹弹道的模拟。     

烟草粉螟实验种群特定时间生命表的研究

在５种温度（１６℃，２０℃，２４℃，２８℃，３２℃）及３种相对湿度（ＲＨ９３％，７６％，４３％）组合条件下，对烟草粉螟实验种群特定时间生命表进行了系统研究，获得了世代平均周期Ｔ，净生殖率Ｒ０和内禀增长率ｒｍ３种生命表参数，并且研究和分析了温、湿度因素对它们的影响。     

Ultrafast Responsive Non‐Volatile Flash Photomemory via Spatially Addressable Perovskite/Block Copolymer Composite Film

The exotic photophysical properties of organic–inorganic hybrid perovskite with long exciton lifetimes and small binding energy have appeared as promising front‐runners for next‐generation non‐volatile flash photomemory. However, the long photo‐programming time of photomemory limits its application on light‐fidelity (Li‐Fi), which requires high storage capacity and short programming times. Herein, the spatially addressable perovskite in polystyrene‐block‐poly(ethylene oxide) (PS‐b‐PEO)/perovskite composite film as an photoactive floating gate is demonstrated to elucidate the effect of morphology on the photo‐responsive characteristics of photomemory. The chelation between lead ion and PEO segment promotes the anti‐solvent functionalities of the perovskite/PS‐b‐PEO composite film, thus allowing the solution‐processable poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) to act as the active channel. Through manipulating the interfacial area between perovskite and P3HT, fast photo‐induced charge transfer rate of 0.056 ns^?1, high charge transfer efficiency of 89%, ON/OFF current ratio of 10⁴, and extremely low programming time of 5 ms can be achieved. This solution‐processable and fast photo‐programmable non‐volatile flash photomemory can trigger the practical application on Li‐Fi.