量子阱红外探测器掺杂阱中能级的计算

量子阱中能级位置的确定是获得量子阱红外探测器其它设计参数的基础。为了提供足够的载流子跃迁,阱层一般为重掺杂层。重掺杂使半导体材料禁带宽度变窄,从而改变量子阱中能级的位置。通过对不同温度、量子阱区不同掺杂浓度条件下的量子阱材料PL 谱进行测量,得出PL 谱峰值波长对应的电子跃迁峰值能量,它与阱中基态能级的位置有关。分别计算了考虑和不考虑禁带变窄效应时的电子跃迁峰值能量,并与实验结果相比较,可以看出考虑禁带变窄效应时与实验结果相吻合,因此掺杂量子阱区能级的计算需要考虑禁带变窄效应,这样可以较为精确的得出阱中能级的位置。     

Characterization of HgCdTe Diodes on Si Substrates Using Temperature-Dependent Current-Voltage Measurements and Deep Level Transient Spectroscopy

Reverse current in diodes can be dominated by generation processes, depending exponentially on temperature according to the rate-limiting step in the generation process. In this report, the current-voltage-temperature (IVT) relationship is analyzed for several midwave infrared and long-wave infrared (MWIR x = 0.295, LWIR x = 0.233) Hg_1−x Cd _x Te (MCT) diodes. The energy varied from diode to diode. At high reverse biases, the energy tends toward the band gap energy. Close to zero bias, the energy ranged from 0.06 to 0.1 eV. Deep level transient spectroscopy (DLTS) showed a broad peak centered at 55–80 K for the MWIR MCT. Comparison of the DLTS spectrum to a simulation based on the energy and capture cross section from a rate window analysis shows that the peak is a band of traps. The capacitance transient amplitude increased as the filling pulse increased from 1 μs to 0.1 s, consistent with capture at a dislocation. A shift to lower temperatures for the peak was also observed when the diodes are cooled under forward bias. The shift is reversible, indicating that the traps consist at least partially of a bistable defect.     

DLTS detection of hole traps in MBE grown ρ-GaAs using schottky barrier diodes

The presence of hole traps has been studied by deep level transient spectroscopy (DLTS) characterization of low carrier densityp-type GaAs grown by MBE on p⁺-GaAs substrates using Al and Co Schottky contacts. The results obtained indicate the presence of several hole traps with energy levels of between 0.06 and 0.65 eV above the valence band in concentrations up to 2 × 10¹²/cm³. Some of these defects,e.g. Cu, are ascribed to system-, source-or substrate-related impurities, but the origin of several other defects is unknown.     

开放的简单三能级原子系统中无粒子数反转激光增益及色散的讨论

我们讨论了开放的简单三能级原子系统中实现无粒子反激光的条件,分析了系统的增益与色散对探测场和驱动场的失谐、驱动场Ｒａｔｉ频率、原子注入速率及逸出速率的依赖性。     

Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy

We have investigated electron emission from self-assembled In_0.5Ga_0.5As/GaAs quantum dots (QDs) grown by molecular-beam epitaxy (MBE). Through detailed deep level transient spectroscopy comparisons between the QD sample and a reference sample, we determine that trap D, with an activation energy of 100 meV and an apparent capture cross section of 5.4×10⁻¹⁸ cm², is associated with an electron quantum level in the In_0.5Ga_0.5As/GaAs QDs. The other deep levels observed, M1, M3, M4, and M6, are common to GaAs grown by MBE.     

变频器在液位自动控制中的应用及其节能效果

变频调速器是一种高效节能调速装置，它以DSP或微处理器为核心，为电动机运行多种电气控制和报警功能，保障设备安全，延长使用寿命。特别是它可以根据设定信号调节电动机转速，实现生产自动控制，节电效果显著，可有力地促进企业节能工作的开展，因而在电机供电控制中得到广泛应用。下面以我厂催化装置中的轻柴油泵为例简单说明控制调速策略。     

一种WDM-PON系统中基于SLA的动态带宽算法

文章提出了一种基于业务等级协议(SLA)的动态带宽分配算法,该算法根据SLA为光网络单元(ONU)分配带宽权重和相应的优先权,确保了ONU的带宽分配和服务质量,改善了网络的性能,满足了网络业务的QoS要求.最后,通过仿真证明了这种算法的正确性.     

部件失效对有源相控阵天线性能的影响分析

有源相控阵天线系统的部件失效会造成天线增益、副瓣电平等性能参数的恶化。在考虑了天线单元幅度和相位的随机误差呈正态分布后,以部件失效的概率分布为依据,分析了包括天线单元失效、子阵失效以及组件失效情况下,天线性能随之变化的趋势。通过算例仿真得出,在文中建立的不同部件失效的数学模型下,天线增益的变化相对平缓,而副瓣抬升则相对较大。计算结果及结论可用于实际相控阵天线性能的评估和工程设计。     

静脉输液液位检测方法研究

提出一种新型光电式液位检测方法,利用输液管对光线的折射原理,检测输液管内的液位是否到达警戒液位,最后通过实验得出最佳检测阈值,该方法能够适用于所有墨菲式输液管及输液液体。     

类W-势阱与应变超晶格量子阱的带间跃迁

假设量子阱是类W-势阱,应变效应表现为势阱底部出现了类抛物线鼓包。在量子力学框架下,讨论了应变效应对输出波长的影响。结果表明,在应变作用下,量子阱出现了能级分裂,正是这种分裂为高性能量子阱光学器件的研制提供了更大的设计空间,为量子阱激光器件输出波长的调节提供了理论基础。