Scaling the Aspect Ratio of Nanoscale Closely Packed Silicon Vias by MacEtch: Kinetics of Carrier Generation and Mass Transport

Metal‐assisted chemical etching (MacEtch) has shown tremendous success as an anisotropic wet etching method to produce ultrahigh aspect ratio semiconductor nanowire arrays, where a metal mesh pattern serves as the catalyst. However, producing vertical via arrays using MacEtch, which requires a pattern of discrete metal disks as the catalyst, has often been challenging because of the detouring of individual catalyst disks off the vertical path while descending, especially at submicron scales. Here, the realization of ordered, vertical, and high aspect ratio silicon via arrays by MacEtch is reported, with diameters scaled from 900 all the way down to sub‐100 nm. Systematic variation of the diameter and pitch of the metal catalyst pattern and the etching solution composition allows the extraction of a physical model that, for the first time, clearly reveals the roles of the two fundamental kinetic mechanisms in MacEtch, carrier generation and mass transport. Ordered submicron diameter silicon via arrays with record aspect ratio are produced, which can directly impact the through‐silicon‐via technology, high density storage, photonic crystal membrane, and other related applications.     

100MW级高峰值功率高光束质量Nd:YAG激光器

报道了一台高峰值功率、高光束质量、高稳定性的100 MW级脉冲灯泵浦Nd:YAG激光器。激光器整机采用种子注入功率放大方式,由激光脉冲放大理论出发,理论分析了影响放大级输出能量密度的因素,结合腔型结构优化设计,合理地选取了实验器件参数。实验中,本振级采用基模动态稳定腔结合电光调Q方式,实现了42mJ基模脉冲激光稳定输出,发散角为0.9mrad。当重复频率为10Hz时,经过腔外两级放大,激光器最终获得了1.146 J的1 064 nm动态激光,脉宽为9.2 ns;输出光束为平顶高斯型分布,发散角为0.3 mrad,1 h内的能量不稳定度RMS≤2.88%。     

16：9宽屏彩电中的图像压缩技术

对于现有１６：９宽屏幕彩电在接收４：３幅型比图像时出现的水平失真现象,提出了一种有效的数字压缩技术,将亮度信号（Ｙ）,两个色差信号（Ｒ－Ｙ,Ｂ－Ｙ）进行数字化处理,按一定规则在存储器中进行信号的存取,实现图像在时间轴上的压缩,解决了图像的水平失真问题。     

硅基PZT铁电薄膜的界面和表面研究

用高分辨岸民镜等手段研究了溶胶－凝胶（Ｓｏｌ－Ｇｅｌ）工艺制备的硅基Ｐｂ（Ｚｒ,Ｔｉ）Ｏ３（ＰＺＴ）铁电薄膜,发现在ＰＺＴ的上表面生成了ＳｉＯ２,ＰＺＴ与硅衬底的界面处形成了无定型的ＳｉＯｘ层并有铅的沉积,而且热处理温度越高,这种现象越显著。这些结构严重影响了ＰＺＴ铁电薄膜的品质及其应用。在分析上述结构产生机制的基础上提出了Ｓｏｌ－Ｇｅｌ工艺的改进方法。     

1030nm高重复频率纳秒脉冲全光纤放大器

采用脉冲调制的单模带尾纤输出的半导体激光器作为种子源,以掺镱光纤为增益介质,采用主振荡功率放大(MOPA)结构,实现了1030nm全光纤脉冲激光放大。脉冲重复频率在50～100kHz范围内可调,在重复频率50kHz时,实现了脉冲宽度为6.53ns,峰值功率为16.08kW的脉冲输出,相应的斜率效率为69%,输出激光的中心波长在1029.49nm。实验还研究了不同重复频率下输出激光脉冲的时域特性。该激光器的输出波长在激光雷达探测器的光谱响应范围内,可作为激光雷达发射光源。     

X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1-xN/GaN superlattice structures

The grazing incidence X-ray reflectivity (GIXR) technique and atomic force microscopy (AFM) were exploited to obtain an accurate evaluation of the surfaces and interfaces for metalorganic chemical vapor deposition grown Al<,x>Ga<,1-x>N/GaN superlattice structures. The X-ray diffraction results have been combined with reflectivity data to evaluate the layer thickness and Al mole fraction in the AIGaN layer. The presence of a smooth interface is responsible for the observation of intensity oscillation in GIXR, which is well correlated to step flow observation in AFM images of the surface. The structure with a low Al mole fraction (x = 0.25) and thin well width has a rather smooth surface for the R<,rms> of AFM data value is 0.45 nm.     

5V单电源供电的低噪声宽带放大器

以单片机MSP430F449为控制核心,设计了一个5 V单电源供电的低噪声宽带放大器。采用单位增益稳定低噪声运放OPA820作为前级放大,高速运放THS3091作为末级放大,其中利用DC-DC变换器TPS61087将5 V电压转化为18 V从而为末级放大电路供电。此外,系统还采用12位高速A/D转换器ADS803实现了测量并数字显示放大器输出电压峰峰值的功能,测量误差小于5%。本系统最高电压增益达到43 dB,上限及下限截止频率达到15 MHz和20 Hz,在50Ω负载上,最大不失真输出电压峰峰值为4.2 V。系统的输出噪声小于200 mV。     

一种动态补偿、高稳定性的LDO设计

设计并实现了一种动态补偿、高稳定性的LDO.针对LDO控制环路稳定性随负载电流变化的特点,给出一种新颖的动态补偿电路.这种补偿电路能很好地跟踪负载电流的变化,从而使控制环路的稳定性几乎与负载电流无关.设计采用CSMC 0.5μm标准CMOS工艺,利用Cadence的EDA工具完成电路设计、版图绘制和流片测试,最终芯片面...     

“高频电子线路”理论课内嵌实验的探讨

国内大学的工程实践性课程通常理论课和实验课分开讲授,时间跨度大,内容不匹配,难以达到互相推动、互相促进的理想效果。在理论课讲授过程中同步内嵌实验课是一种无需变动复杂的课程体系,而能显著改善教学效果的方法。本文以“高频电子线路”课程的教学实践为例,探讨了此类改革面临的挑战和应对方法。     

欧姆龙工业网络控制系统集成

本文系统地论述了工业网络控制系统集成方式,并对各种构成形式和特点进行了讨论,给出了相应的系统集成结构。通过造纸厂板纸机控制系统集成实例,表明欧姆龙网络控制系统及其变频器在生产制造领域中的重要作用。