超微 Al_2O_3 粉热压烧结陶瓷的性能

采用超微Ａｌ２Ｏ３粉和热压烧结工艺制备出两种Ａｌ２Ｏ３基陶瓷（Ａｌ２Ｏ３－ＭｇＯ－ＴｉＣ、Ａｌ２Ｏ３－ＭｇＯ－ＴｉＣ－Ｙ－ＰＳＺ）。研究了这两种材料烧结体的密度、显微组织和力学性能。并将烧成陶瓷加工成切削刀片，对３５ＣｒＭｎＳｉＡ超高强度调质钢进行切削试验，所得结果与其它几种陶瓷刀具的切削性能进行了比较。     

Farbication of Optically Transparent Lead Magnesium Niobate Polycrystalline Ceramics Using Hot Isostatic Pressing

The physical, dielectric, and optical properties of hot isostatically pressed lead magnesium niobate polycrystalline ceramics modified with 1/2 mol% La₂O₃, Pb_{1–3/2 x} La _x □ _{x /2}-(Mg_1/3Nb_2/3)O₃, have been investigated. Methods used to characterize the ceramics included determination of the dielectric permittivity, optical transmittance, and refractive index dispersion. The materials exhibited relaxor ferroelectric type behavior with a peak dielectric constant K > 14000 and average T _c ∼−35°C. Various sintering, hot isostatic pressing, and annealing conditions were examined to produce highly dense and optically transparent materials. Through the use of hot isostatic pressing, densities more than 99.5% theoretical and transmittance greater than 50% at 633-nm wavelength were obtained. Hot isostatic pressing technique appears to be a good alternative to hot uniaxial pressing without the associated problem of PbO volatility, reactivity with the pressure vessel, and geometrical constraints.     

Ultraefficient Non-Doped Deep Blue Fluorescent OLED: Achieving a High EQE of 10.17% at 1000 cd m−2 with CIEy<0.08

The pursuit for efficient deep blue material is an ever-increasing issue in organic optoelectronics field. It is a long-standing challenge to achieve high external quantum efficiency (EQE) exceed 10% at brightness of 1000 cd m⁻² with a Commission International de L'Eclairage (CIE_y) <0.08 in non-doped organic light-emitting diodes (OLEDs). Herein, this study reports a deep blue luminogen, PPITPh, by bonding phenanthro[9,10-d]imidazole moiety with m-terphenyl group via benzene bridge. The non-doped OLED based on PPITPh exhibits an exceptionally high EQE of 11.83% with a CIE coordinate of (0.15, 0.07). The EQE still maintains 10.17% at the brightness of 1000 cd m⁻², and even at a brightness as high as 10000 cd m⁻², an EQE of 7.5% is still remained, representing the record-high result among non-doped deep-blue OLEDs at 1000 cd m⁻². The unprecedented device performance is attributed to the reversed intersystem crossing process through hot exciton mechanism. Besides, the maximum EQE of orange phosphorescent OLED with PPITPh as host is 32.02%, and remains 31.17% at the brightness of 1000 cd m⁻². Such minimal efficiency roll-off demonstrates that PPITPh is also an excellent phosphorescent host material. The result offers a new design strategy for the enrichment of high-efficiency deep blue luminogen.     

热挤压AZ91D镁合金线材的组织与性能研究

对铸态AZ91D合金进行400~460℃不同温度下的正挤压,制备出直径为3~4 mm的线材。利用光学显微镜分析线材的组织,测试其拉伸力学性能和热膨胀系数。结果表明,在不同挤压温度下均可制备出AZ91D镁合金线材,挤压温度越低,线材晶粒越细小。线材具有优异的力学性能,经400℃热挤压成形的线材抗拉强度和伸长率高达285.6 MPa和5.3%,明显高于同牌号铸态合金的性能。线材的平均线膨胀系数为(21.3~27.4)×10-6K-1。较低挤压温度下制备的线材具有较高的力学性能与较小的线膨胀系数。     

Suppression of phonon‐mediated hot carrier relaxation in type‐II InAs/AlAsxSb1 − x quantum wells: a practical route to hot carrier solar cells

InAs/AlAs_xSb_{1 − x} quantum wells are investigated for their potential as hot carrier solar cells. Continuous wave power and temperature‐dependent photoluminescence indicate a transition in the dominant hot carrier relaxation process from conventional phonon‐mediated carrier relaxation below 90 K to a regime where inhibited radiative recombination dominates the hot carrier relaxation at elevated temperatures. At temperatures below 90 K, photoluminescence measurements are consistent with type‐I quantum wells that exhibit hole localization associated with alloy/interface fluctuations. At elevated temperatures, hole delocalization reveals the true type‐II band alignment, where it is observed that inhibited radiative recombination due to the spatial separation of the charge carriers dominates hot carrier relaxation. This decoupling of phonon‐mediated relaxation results in robust hot carriers at higher temperatures, even at lower excitation powers. These results indicate type‐II quantum wells offer potential as practical hot carrier systems. Copyright © 2016 John Wiley & Sons, Ltd.     

A laboratory evaluation of a novel hot water cabinet for the decontamination of sides of beef

A hot water cabinet based on an idealized distributor design for the decontamination of sides of beef is described and a laboratory evaluation of this novel cabinet is reported.
Beef sides were inoculated with E. coli and exposed to mean water temperatures at the surface tissue ( T _f) of 83.5, 74.2, 66.0 and 44.5°C for 10 or 20 s. Mean log₁₀ reductions of bacteria for 10-s exposures were 2.23, 1.40, 0.91 and 0.2. For 20 s, reductions were 2.98, 2.14, 1.17 and 0.1. There was a significant ( P < 0.05) linear relationship between log reductions and T _f which varied with exposure time. At a T _f of 83.5°C with exposure times greater than 20 s, carcass bloom was judged to be permanently and adversely affected. At shorter times or with lower temperatures this did not occur.
Evaporative heat losses were well correlated with the pressure driving force ( r = 0.89) and gravity driving force ( r = 0.92) for air interchange between the cabinet and its surrounds.
The running cost using the distributor cabinet was one-third of that of an existing spray cabinet when compared at the maximum reduction of log 1.3 (95%) achieved by the spray cabinet. An additional advantage of the distributor cabinet is its constructional simplicity.     

偏光片可靠性试验方法研究

作为LCD的主要原材料之一,偏光片的可靠性直接影响着LCD的使用寿命和使用效果.文章主要总结了偏光片可靠性的分级以及各种失效现象,并且分析了出现各种失效现象的原因,归纳出判定偏光片优劣的方法.     

全密封超薄碳纳米管玻璃平板字符显示器件制造工艺的初步探讨

利用自制的场助热丝化学气相沉积设备，在不锈钢电极的部分选取表面上，摸索出了直接生长碳纳米管（CNT’s）勿须涂敷催化剂的新方法。利用得到的高定向多壁碳纳米管薄膜，研究出一种制造大面积实用碳纳米管阵列场发射（CNT’s／FEA）阴极的新方法。经真空条件下的发射特性测量及SEM等检测手段肯定了这种CNT’s／FEA阴极的实用性。从工艺流程角度出发，初步探讨了静态工作制式下，采用碳纳米管做电极后，实现一种全密封超薄碳纳米管玻璃真空字符（或图像）显示器件的可能性。10多只封离管共显示过3种类型的字型（图像），全部管厚仅为2．7mm。实验结果不仅提供了一种碳纳米管阴极在玻璃真空平板型器件内应用的方法，也摸索出了一条实现小尺寸双色（或多色）字符（图像）静态（或动态）显示的廉价、节能途径。     

智能终端中热IP核的通信方法

片上网络通信架构的改进,使热IP核连接多个路由器,并且原本与热IP核相连的一个路由器的通信量被分配到多个路由器上。基于改进的片上网络通信架构,又设计出新的路由器选择算法。在该算法中,可以根据热IP连接的路由器的当前状态选择数据通信的路由,这样使得热IP能够更加均匀地分配通信量,从而有效地提高了数据传输效率,降低数据传输延时。实验表明,新的算法能够有效减少传输延迟。     

Fabrication of 0.1 Micron MOSFETs and Their Characteristics

Two innovative techniques for manufacturing 0. 1 micron MOSFETs are described. One is SiO2-resist overetching method, in which an additional SiO2 layer is used to short the gate length; the other is dual-exposure method, according to which two overlapped masks are exposed in a single lithography. Both of them are easy to implement, without any special processing technologies required. The layout used in a real process is introduced. As a result, MOSFETs with minimal channel length of 0.12 micron are obtained. Also, the test results on characteristic are given. Finally, a conclusion is drawn that in 0.1 micron scale, both saturation currents and transconductorance of MOSFETs increase, while substrate currents decrease when channel length diminish.