自旋场效应晶体管的电学特性研究(英文)

用非平衡格林函数方法研究一种自旋场效应晶体管的电子输运特性。结果表明,不考虑自旋散射的作用,当漏极电压比较小时该器件能达到很高的磁阻比率。对该器件在考虑自旋散射和不考虑自旋散射下的输出电流进行对比,发现在铁磁平行(反平行)的条件下,考虑自旋散射时的输出电流要比不考虑自旋散射时的输出电流小(大)。研究结果揭示了该器件的物理机制,为该器件的优化设计提供了理论指导。     

Efficient Charge Injection in Organic Field‐Effect Transistors Enabled by Low‐Temperature Atomic Layer Deposition of Ultrathin VOx Interlayer

Charge injection at metal/organic interface is a critical issue for organic electronic devices in general as poor charge injection would cause high contact resistance and severely limit the performance of organic devices. In this work, a new approach is presented to enhance the charge injection by using atomic layer deposition (ALD) to prepare an ultrathin vanadium oxide (VO_x) layer as an efficient hole injection interlayer for organic field‐effect transistors (OFETs). Since organic materials are generally delicate, a gentle low‐temperature ALD process is necessary for compatibility. Therefore, a new low‐temperature ALD process is developed for VO_x at 50 °C using a highly volatile vanadium precursor of tetrakis(dimethylamino)vanadium and non‐oxidizing water as the oxygen source. The process is able to prepare highly smooth, uniform, and conformal VO_x thin films with precise control of film thickness. With this ALD process, it is further demonstrated that the ALD VO_x interlayer is able to remarkably reduce the interface contact resistance, and, therefore, significantly enhance the device performance of OFETs. Multiple combinations of the metal/VO_x/organic interface (i.e., Cu/VO_x/pentacene, Au/VO_x/pentacene, and Au/VO_x/BOPAnt) are examined, and the results uniformly show the effectiveness of reducing the contact resistance in all cases, which, therefore, highlights the broad promise of this ALD approach for organic devices applications in general.     

导电流体在水平磁场中的粘度

采用回转振荡法，在向导电流体所在空间引入水平可调永磁磁场的条件下，测量研究了导电流体--液态汞（20℃）的粘度. 结果表明，液态汞的粘度随磁场强度的增大而增加，二者呈光滑的抛物线关系. 液态汞在磁场中粘度增加的现象与磁场导致的固态导电物质的磁粘滞效应现象相似，可以用磁场对带电运动粒子的作用简单直观地解释液态汞在磁场中粘度增加的机理. 这些研究成果为研究磁场直拉硅单晶生长提供了理论依据.     

The Full Cost of Cryptanalytic Attacks

An open question about the asymptotic cost of connecting many processors to a large memory using three dimensions for wiring is answered, and this result is used to find the full cost of several cryptanalytic attacks. In many cases this full cost is higher than the accepted complexity of a given algorithm based on the number of processor steps. The full costs of several cryptanalytic attacks are determined, including Shanks method for computing discrete logarithms in cyclic groups of prime order n, which requires n^1/2+o(1) processor steps, but, when all factors are taken into account, has full cost n^2/3+o(1). Other attacks analyzed are factoring with the number field sieve, generic attacks on block ciphers, attacks on double and triple encryption, and finding hash collisions. In many cases parallel collision search gives a significant asymptotic advantage over well-known generic attacks.     

背表面形貌对硅太阳电池效率的影响

Different processes are used on the back surface of silicon wafers to form cells falling into three groups：textured, planar, and sawed-off pyramid back surface.The characteristic parameters of the cells, ISC, VOC, FF, Pm, and Eff, are measured.All these parameters of the planar back surface cells are the best.The FF, Pm, and Eff of sawed-off pyramid back surface cells are superior to textured back surface cells, although ISC and VOC are lower.The parasitic resistance is analyzed to explain the higher FF of the sawed-off pyramid back surface cells.The cross-section scanning electron microscopy（SEM） pictures show the uniformity of the aluminum-silicon alloy, which has an important effect on the back surface recombination velocity and the ohmic contact.The measured value of the aluminum back surface field thickness in the SEM picture is in good agreement with the theoretical value deduced from the Al-Si phase diagram.It is shown in an external quantum efficiency（EQE） diagram that the planar back surface has the best response to a wavelength between 440 and 1000 nm and the sawed-off back surface has a better long wavelength response.     

基于仲裁器PUF的SRAM FPGA防克隆技术设计与实现

为保护电子设备中使用的静态随机存储器(SRAM)型现场可编程门阵列(FPGA)内部电路设计不被窃取,设计了用于SRAM FPGA的防克隆电路.该电路利用FPGA制造过程中的随机误差,提取每块芯片独一无二的ID.在此ID的控制下,被保护电路只能在指定的FPGA中正常运行,而在未指定的FPGA中运行时,无法产生正确的输出,从而达到防克隆目的.防克隆电路由使用仲裁器的物理不可克隆函数(PUF)、多数表决器、运算门阵列等三部分构成,其中仲裁器PUF电路用于提取ID,多数表决器起到提高输出稳定性的作用.最后在FPGA开发平台上证明了该电路的可行性.     

超短脉冲强激光场高次谐波研究的最新进展

总结了超短脉冲强激光场高次谐波理论和实验研究最近的一些工作,讨论了高次谐波研究的重大意义,并对今后高次谐波的研究工作提出了看法。     

机动型激光测风雷达倾斜风场修正算法研究

为了解决激光测风雷达处于倾斜放置的情况下测出的风场信息与实际风场之间存在的误差,分析了激光雷达的测量原理、放置情况以及存在的问题,采用空间坐标变换的方法对雷达倾斜状态进行理论计算并给出了修正计算公式。对比了水平放置和横向倾斜7.2°放置的激光雷达的实测数据,发现修正前由于倾斜放置导致雷达所测垂直气流数据间产生的误差较大,加入修正算法进行仿真后,数据曲线吻合良好,修正效果明显。结果表明,空间坐标变换的修正算法可使激光雷达在处于非特定位置时仍能正确地反映实际风场信息,从而验证了该修正算法的正确性和可行性。     

基于电化学过程的电解加工间隙电场的研究

分析了电解加工电极界面双电层的特殊性。结合阴极设计的思路，讨论了电极表面去极化对电极过程的影响以及改变流场、改变电极表面电流分布对提高电解加工精度的作用。最后提出采用磁场改变电解加工间隙电场的分布，从而使加工精度得到提高的方法。因为在微观上磁场对电解液分子结构的作用和对作为带电粒子的离子运动方向的影响，构成了对电极过程和间隙电场的影响，宏观上表现为减少电解加工杂散腐蚀，减轻流纹。     

基于点电荷模型的腐蚀相关静电场快速预测方法研究

针对舰船腐蚀相关静态电场实时预测难的问题,提出了基于点电荷（电极）模型的快速建模方法。对舰船的结构进行合理分区,通过计算混合电位值确定电极的极化状态;在电极极化曲线及电化学系统电流和为0的准则基础上,建立了点电极电位和电流之间的函数关系;利用最小二乘算法计算点电极的电流值,并根据点电荷3层模型下的电位计算方法预测舰船腐蚀相关静态电场;分别利用仿真数据和船模试验数据对所提方法的有效性进行了检验。结果表明,所提方法能够实现对舰船腐蚀相关静态电场进行快速预测。