c轴择优取向ZnO薄膜RF溅射工艺研究

通过射频磁控溅射在Si(100)基片上制备了ZnO薄膜,该文着重研究了磁控溅射中各生长参数如衬底温度、氧分压及后处理工艺等因素对氧化锌薄膜结晶性能、表面形貌、择优取向与微结构的影响,并对溅射工艺与取向、结构的关系进行了分析比较,从而确定了最佳溅射及后处理条件并获得了c轴择优取向的ZnO薄膜。     

基于网站群技术建设市级政府门户的研究探讨

网络整合和信息整合逐渐成为电子政务建设的发展趋势，网站群建设也逐步成为政府网站和电子政务发展新阶段的新要求、新亮点。本文主要描述了目前政府网站的现状及建设思路，着重分析了网站群的技术框架及特点。     

STN-LCD液晶显示器定向层摩擦工序的静电研究

讨论了基于STN液晶显示器定向层摩擦静电原理,从摩擦布表面静电累积、PI稀释剂、TOPCOAT、湿度、离子风机和软X光等方面对静电影响进行实验研究,并对结果进行了讨论,提出了控制摩擦工序静电的建议。     

一种新的Kossel定向方法

本文提出一种新的Kossel定向方法。它只要求测出透射Kossel花样上的三个Kossel线交点之间的距离就能定向,从而减少了误差的来源,提高了定向精度。通常的透射Kossel照片定向误差为σ=±0.3°     

Effects of Sn-doping on morphology and optical properties of CdTe polycrystalline films

Sn-doped CdTe polycrystalline films were successfully deposited on ITO glass substrates by close space sublimation. The effects of Sn-doping on the microstructure, surface morphology, and optical properties of polycrystalline films were studied using X-ray diffraction, scanning electron microscopy, and ultraviolet-visible spectrophotometry, respectively. The results show that the lower molar ratio of Sn and CdTe conduces to a strongly preferential orientation of (111) in films and a larger grain size, which indicates that the crystallinity of films can be improved by appropriate Sn-doping. As the molar ratio of Sn and CdTe increases, the preferential orientation of (111) in films becomes weaker, the grain size becomes smaller, and the crystal boundary becomes indistinct, which indicates that the crystallization growth of films is incomplete. However, as the Sn content increases, optical absorption becomes stronger in the visible region. In summary, a strongly preferential orientation of (111) in films and a larger grain size can be obtained by appropriate Sn-doping (molar ratio of Sn : CdTe = 0.06 : 1), while the film retains a relatively high optical absorption in the visible region. However, Sn-doping has no obvious influence on the energy gap of CdTe films.     

高度取向ZnO薄膜的介电和光波导特性研究

用溶胶凝胶法在不同的基片上制备了具有高度 ｃ 轴即（００２）取向的 Ｚｎ Ｏ 薄膜,研究了溶剂、稳定剂等对合成的先体溶液的影响。对薄膜的 Ｘ Ｒ Ｄ 分析表明随热处理温度的增加,ｃ 轴取向度增大,并且薄膜的晶粒尺寸在 ３００ ° Ｃ～５００ ° Ｃ 范围内增幅较大。用端面耦合的方法测量了制备在 Ｓｉ Ｏ２／ Ｓｉ（１１１）基片上薄膜的波导损耗,即随热处理温度的增加,波导损耗增大,主要来源于 Ｚｎ Ｏ 薄膜与 Ｓｉ Ｏ２ 的界面及晶粒的散射。制备在 Ｐｔ／ Ｓｉ Ｏ２／ Ｓｉ（１１１）基片上薄膜的相对介电常数为 ７～１３,电阻率则为 １．７×１０４ Ω·ｃｍ ～９．８×１０５ Ω·ｃｍ 。     

利用偏振光谱研究分子偶极矩取向

有机材料分子偶极矩的取向可以影响平板OLED器件 的输出耦合效率,进而对OLED的发光效率具有重要的影响。通过测量偏振光谱及Gaussian软 件拟合,分析了提拉成膜法制备的具有不同分子构型的8-羟基喹啉铝(Alq₃)和4,4-二(9-咔唑)联苯(CBP)薄膜及其溶液中分子偶极矩的取向。实验结果和理论计算分析表明 ,Alq₃分子具有5.769 Debye的固有偶极矩 ,而CBP分子的固有偶极矩为零。在氯仿溶液中两种分子的取向随机分布,提拉成薄膜后分 子沿提拉方向具有一定程度的择优取向,呈现各向异性。薄膜中Alq₃分子的各向异性度大 于溶液状态,而CBP分子的情况正好相反。分析认为:分子是否具有固有偶极矩及偶极矩的 取向,是不同的偏振吸收和偏振荧光现象出现的原因。     

基于DSP二维声源定向系统设计

利用ADSP BF533 DSP处理器设计了一种二维声源定向系统。系统基于声波到达时间差技术,采用相位匹配算法,对两个传声器采集的声音信号进行分析。通过算法仿真验证了算法的可行性和准确性,并将算法在DSP上实现。     

Performance of (1 1 0) p-channel SOI-MOSFETs fabricated by deep-amorphization and solid-phase epitaxial regrowth processes

The impact of local deep-amorphization (DA) and subsequent solid-phase epitaxial regrowth (SPER) are studied for the co-integration of devices with hybrid surface orientation. Thin-body p-channel transistors with 20 nm thick film and HfO₂ gate insulator/metal gate along several directions on a (1 1 0) substrate were fabricated and characterized. No deterioration of transconductance or threshold voltage was induced by DA/SPER process. Device co-integration using DA/SPER process is therefore a realistic option. 〈1 1 0〉 channel on (1 1 0) SOI film yields a 200% gain on the current for the (1 0 0) surface orientation. However, the benefit of it decreases with the channel length.     

热电Ca3Co4O9薄膜的一致取向生长及其激光感生电压效应

利用脉冲激光沉积(PLD)法,在蓝宝石(0001)平衬底上成功制备了c轴一致取向的Ca3Co4O9薄膜。利用X射线衍射(XRD)分析测定了薄膜的相结构和生长取向。研究了不同衬底温度与不同原位氧压对Ca3Co4O9薄膜结晶质量与生长取向的影响,确定了最佳生长条件。利用这一条件在倾斜Al2O3(0001)衬底上制备了Ca3Co4O9薄膜。研究发现,当Ca3Co4O9薄膜被波长248nm,脉冲宽度20ns的脉冲激光照射时,在薄膜两端存在较大的激光感生热电电压(LITV)信号,峰值电压达到4.4V,其上升沿为36ns,半峰全宽(FWHM)为131ns。可以认为这种激光感生热电电压信号是由于Ca3Co4O9薄膜面内与面间泽贝克(Seebeck)系数张量的各向异性引起的。