Ceramic coating on ceramic with metallic bond coating

The change in structure and adhesion strength of the interface by heating in air has been investigated for a plasma- sprayed alumina coating on a ceramic substrate with a 50Ni- 50Cr alloy bond coating. A veined structure composed of NiO, NiCr ₂O₄, and NiAl₂O₄ oxides grew from the bond coating into cracks or pores in the top coating and the alumina substrate after heating at 1273 K for 20 h in air. The NiAl₂O₄ spinel may have formed by the oxidization of nickel, which subsequently reacted with the alumina coating or the substrate. The mechanism of the penetration of the spinel oxides into the cracks or pores is not clear. The adhesion strength of the coating is increased to about 15 MPa after heating at 1273 K for 20 h in air, compared to an as- sprayed coating strength of only 1.5 MPa.     

Self-organized porous TiO2 and ZrO2 produced by anodization

The present work investigates the electrochemical formation of self-organized high aspect ratio TiO₂ and ZrO₂ nanotube layers. The formation and growth of a self-organized porous layer can be achieved directly by anodization without any templates in fluoride containing electrolytes. The morphology of the porous layers is affected by the electrochemical conditions such as the electrolyte composition, the pH and the exact polarization treatment (such as the potential sweep rate from the open-circuit potential to the anodizing potential). For Ti, nanotube layers are formed with diameters varying from approx. 20 nm to 100 nm and lengths from approx. 0.25 μm to 2.5 μm depending on the electrolytes and pH. On the other hand, for Zr, tubes of 50 nm in diameter and up to approx. 17 μm in length can be grown—a key parameter in this case is the potential sweep rate. The large difference between Ti and Zr in the achievable thickness of nanotube layers indicates a difference in the growth mechanism which may be based on the different chemical dissolution rates of electrochemically formed oxides.     

The Effect of Sulfur Segregation on the Adherence of the Thermally-Grown Oxide on NiAl—I: Sulfur Segregation on the Metallic Surface of NiAl(001) Single-Crystals and at NiAl(001)/Al2O3 Interfaces

The aim of this study was to improve the understanding of the deleterious effect of sulfur impurities on the adherence of the thermally-grown oxide on the boundary layer in thermal-barrier-coating systems. In Part I, the sulfur segregation on the free surface of NiAl(001) and at different interfaces between metal and transient alumina scales has been characterized by AES, XPS and LEED. The sulfur diffusion coefficient in the alloy has been determined (D = 0.15 exp(–218,000/RT) cm²/s). It is by three orders of magnitude larger than the nickel and aluminum self-diffusion coefficients. It has also been observed that the sulfur de-segregates upon Al enrichment of the metallic surface. The saturation of the metallic surface with an amorphous alumina layer formed at room temperature blocks the segregation of S. However, in the initial stages of oxidation where the transient -alumina grows by cationic transport and inject vacancies at the interface, S segregates at the interface between the alumina thin films and the metallic substrate.     

The high-temperature oxidation of Ni-20%Cr alloys containing various oxide dispersions

The oxidation behavior of Ni-20%Cr alloys containing approximately 3 vol.% Y₂O₃, ThO₂, and A1₂O₃ as dispersed particles has been examined in the temperature range 900 to 1200° C in slowly flowing oxygen at 100 Torr. The results show that the oxidation behavior of the Y₂O₃-, ThO₂-, Al₂O₃-, and Ce0₂-containing alloys is very similar and that some anomalies in the behavior of the ThO₂-containing alloy might be explained by the slower rate of chromium diffusion in this coarse-grained alloy. Two Al₂O₃-containing alloys were studied. One with a relatively coarse dispersoid size behaved in a manner analogous to a dispersion-free Ni-30% Cr alloy at 1100°C. The other alloy contained a dispersion of fine Al₂O₃ particles and behaved exactly like the Y₂O₃-containing alloy at 1000 and 1100°C, but at 1200° C oxidized at a faster rate. It has been shown that the adherent scales on dispersion-containing alloys have a stabilized fine grain size, whereas the nonadherent scales on dispersion-free alloys undergo grain growth.This work has been supported by the Naval Air Systems Command under Contract No. N00019-72-C-0190.     

表面氧化层对TiMn1.25Cr0.25储氢合金活化性能的影响

通过TiMn1.25Cr0.25合金粉活化前在空气中暴露不同的时间,探讨了表面氧化层的形成对其活化性能的影响。活化测试结果表明：合金的活化难度随着合金在空气中暴露时间的延长而加大。俄歇电子能谱(AES)结果表明,在空气中暴露后的合金表面形成了一层大约6nm-10nm厚的表面氧化层,正是这层氧化层的形成加大了合金的活化难度。扫描电镜(SEM)结果表明合金的活化过程与合金的碎化有着密切的联系。     

Effect of theθ-α-Al2O3 transformation on the oxidation behavior ofβ-NiAl + Zr

Isothermal oxidation of NiAl + Zr has been performed over the temperature range of 800–1200°C and studied by TGA, XRD, and SEM. A discontinuous decrease in growth rate of two orders of magnitude was observed at 1000° C due to the formation of -Al₂O₃ from -Al₂O₃. This transformation also resulted in a dramatic change in the surface morphology of the scales, as a whisker topography was changed into a weblike network of oxide ridges and radial transformation cracks. It is believed that the ridges are evidence for a shortcircuit outward aluminum diffusion growth mechanism that has been documented in a number of¹⁸O tracer studies.     

Performance of positive and negative electrodes in amorphous manganese oxide supercapacitor

Using potassium permanganate and acetic manganese as the reactants, amorphous manganese oxide was prepared with mechanochemical method. XRD was used for microstructure characterization, while cyclic voltammetry and constant current charge-discharge were used for electrochemical performance testing. The positive electrode （PE） and negative electrode （NE） were investigated respectively in amorphous manganese oxide supercapacitor, aiming to find their different performances in charging-discharging. The results show that the crystalline structure is destroyed in both the PE and NE material during charge-discharge process. Thereinto, the NE suffers a bit more seriously. When cycling, the PE potential scope diminishes while the NE potential scope enlarges. The increased inner resistance makes the NE curves almost bended to be a right angle, but not the PE curves. The cell＇s equivalent series resistance （ESR） is more dependent on the NE, and the capacitance is mainly determined by the rapid descent of the NE potential range. The capacitances of the NE are highly rate-dependent, decreasing from 121.3 to 53.1 F/g, by 56.2%, over the range of 5-25 mV/s. However, the PE appears to be weakly dependent and its capacitance is only dropped by 22.1%.     

回转管电炉和四管还原炉的技术改进

介绍了近年来在制作回转管炉、四管还原炉的技术进步；通过对回转管炉的密封系统、筑炉材质、传动部份等改进，使回转管炉能适用生产高质量的多种蓝色氧化钨，通过对四管炉炉体结构和控温系统的改进，克服了原四管炉炉管温度分布不均匀的弊端，为生产优质钨粉奠定了基础。     

Semi-physical mean-value NOx model for diesel engine control

A semi-physical model has been developed to predict nitrogen oxide (NO_x) emissions produced by diesel engines. This model is suitable for online NO_x estimation and for model-based engine control. It is derived from a zero-dimensional thermodynamic model which was simplified by only retaining main phenomena contributing to NO_x formation. The crank angle evolution of the burned gas temperature, which has a strong impact on NO_x formation rate, is described by a semi-empirical model whose key variable is the maximum burned gas temperature. This variable presents a good correlation with the molar fraction of NO_x at the end of combustion and can be expressed as a function of the intake burned gas ratio and the start of combustion. The maximum burned gas temperature sub-model is then coupled to an averaged NO_x formation kinetic model (based on the Zeldovich mechanism) to form a mean-value model for NO_x computation. This latter model was validated using data sets recorded in two diesel engines for steady-state operating conditions as well as for several driving cycles including parametric variations of the engine calibration.     

Relationship between crystallinity and device characteristics of In‐Sn‐Zn oxide

We have reported that the transistors having the c‐axis‐aligned crystalline (CAAC) In‐Ga‐Zn oxide (IGZO) show good performance. Recently, In‐Sn‐Zn Oxide (ITZO) has attracted much attention because of its high electron mobility, as well as IGZO. However, it has been reported that ITZO field effect transistors (FET) tend to have positive Vth (normally‐on characteristics) and poor reliability compared with IGZO‐FETs. We have reported that high‐performance and high‐reliability OS‐FETs can be fabricated by using CAAC‐IGZO, which has high crystallinity and has no clear grain boundaries, as an active layer. Therefore, we have fabricated CAAC‐ITZO thin films to improve performance of ITZO‐FETs by using CAAC‐ITZO as an active layer. In addition, FETs employing CAAC‐ITZO have better characteristics and reliability than FETs using nano‐crystal ITZO. Furthermore, constant photocurrent method (CPM) measurement was carried out in order to estimate density of deep‐level defect states caused by oxygen vacancies in oxide semiconductors. The results show that CAAC‐ITZO has lower density of deep‐level defect states than nano‐crystal ITZO. We attribute the improvement in reliability of ITZO‐FETs to a decrease in deep‐level defect states of an ITZO active layer, as is the case with IGZO.