NMDA Receptor Modulation of Incidental Learning in Pavlovian Context Conditioning.

Rats exposed to a footshock show conditional fear when reexposed to the shock context. Immediate presentation of shock after placement in the context significantly reduces this fear. Preexposure to the context in the absence of shock, coupled with a minimum preshock interval during training, overcomes this immediate shock deficit. Because rats learn about the context during preexposure and express that learning after being reinforced, the context preexposure effect is an aversive analogue of latent learning. The authors examined the effect of the N-methyl-D-aspartate (NMDA) receptor antagonist D,L-2-amino-5-phosphovalerate (APV) on the facilitatory effect of context preexposure. Rats were preexposed to a chamber after APV administration. The next day they were placed in the same chamber without drug and received shock 35 s later. APV blocked the facilitatory effect of preexposure. Therefore NMDA receptors are important for contextual latent learning. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

与供应商的采购合作关系分析

对与供应商的采购合作关系进行了初步的分析，通过需求分析、选择供应商、正式建立合作关系、实施和加强合作关系4个过程展开，分别对筛选战略、供应管理计划流程、供应商的评估和选择、认证管理等关键问题进行初步分析，旨在使采购工作趋于完美。     

柳钢新建氧化球团工程的设计特点

介绍了柳钢新建120万t／a链篦机-回转窑氧化球团工程的主要设计特点。该工程是我国第一条自行设计、设备国产化和采用清洁气体能源的链篦机-回转窑生产线。它的顺利投产，标志着我国炼铁炉料生产技术有了一个新的进步。     

Inside Front Cover: The Elastic Properties and Plastic Behavior of Two‐Dimensional Polymer Structures Fabricated by Laser Interference Lithography (Adv. Funct. Mater. 10/2006)

The probing of the micromechanical properties within a two‐dimensional polymer structure with sixfold symmetry fabricated via interference lithography reveals a nonuniform spatial distribution in the elastic modulus “imprinted” with an interference pattern in work reported by Tsukruk, Thomas, and co‐workers on p. 1324. The image prepared by M. Lemieux and T. Gorishnyy shows how the interference pattern is formed by three laser beams and is transferred to the solid polymer structure. The elastic and plastic properties within a two‐dimensional polymer (SU8) structure with sixfold symmetry fabricated via interference lithography are presented. There is a nonuniform spatial distribution in the elastic modulus, with a higher elastic modulus obtained for nodes (brightest regions in the laser interference pattern) and a lower elastic modulus for beams (darkest regions in the laser interference pattern) of the photopatterned films. We suggest that such a nonuniformity and unusual plastic behavior are related to the variable material properties “imprinted” by the interference pattern.     

热管传热性能对小型热管换热器散热效能影响

在零重力辅助下,小热管热阻是小型热管换热器散热效能的重要影响因素之一。基于集总参数法对于换热器系统数值计算的高效性思想,建立了热管、热管换热器的集总参数模型。对同一热管换热器选用不同传热性能的热管,在不同传热温差和流体质量流速下,就其散热效能进行了数值计算。计算结果表明,在零重力辅助下,热管换热器管内热阻存在一临界值Rcri。当热阻RHP≤Rcri时,管外热阻起主导作用,热管换热器的散热效能εh几乎不随热管管内热阻的值而变化。     

洪家渡水电站工程高边坡综述

乌江洪家渡水电站坝址河谷深切300余m,硬质岩与软质岩相间分布,岸坡地形陡峻,软弱夹层发育,卸荷、崩塌等物理地质作用强烈。根据坝址地质条件与电站枢纽布置,工程存在:隧洞群进水口同向高边坡整体稳定问题;坝肩开挖、隧洞进出口开挖、厂房开挖及料场开挖等高边坡稳定问题;泄洪冲刷及雾化区1号、2号塌滑体高边坡稳定问题;王家渡堆料场、瓦房寨砂石系统高边坡稳定问题。因此,工程高边坡稳定问题是本工程的主要工程问题之一,但通过参建各方共同努力,本工程高边坡处理都取得了圆满成功。     

Optimization of Selective Epitaxial Growth of Silicon in LPCVD

Selective epitaxial growth (SEG) of silicon has attracted considerable attention for its good electrical properties and advantages in building microstructures in high‐density devices. However, SEG problems, such as an unclear process window, selectivity loss, and nonuniformity have often made application difficult. In our study, we derived processing diagrams for SEG from thermodynamics on gas‐phase reactions so that we could predict the SEG process zone for low pressure chemical vapor deposition. In addition, with the help of both the concept of the effective supersaturation ratio and three kinds of E‐beam patterns, we evaluated and controlled selectivity loss and nonuniformity in SEG, which is affected by the loading effect. To optimize the SEG process, we propose two practical methods: One deals with cleaning the wafer, and the other involves inserting dummy active patterns into the wide insulator to prevent the silicon from nucleating.