Ionoluminescence decay measured with single ions

A new ion beam analysis-based, single ion technique called the time to first photon has been developed to measure the decay of the luminescence signal of phosphors. Such measurements are currently needed to study luminescence decay mechanisms following high-density excitations and to identify strongly luminescent phosphor coatings with short lifetimes for ion photon emission microscopy (IPEM). The samples for this technique consist of thin phosphor layers placed or coated on the surface of PIN diodes. Single ions from an accelerator strike this sample and simultaneously create ion beam induced luminescence (IBIL) from the phosphor that is measured by a single-photon-detector, and an ion beam induced charge collection (IBICC) signal in the PIN diode. In this case, the IBICC signal provides the start pulse and the IBIL signal the stop pulse to a time to amplitude converter. It is straightforward to show that this approach also measures a signal proportional to activity versus time with an accuracy of 5% as long as the number of detected photons per ion is less than 0.1, which usually requires the use of absorbers for the IBIL detector or electronic discrimination for the IBIL signals. Details of the new analysis are given together with examples of luminescence decay measurements of several ceramic phosphors being considered to coat IPEM samples. IPEM is currently being developed at Sandia National Laboratory (SNL), the University of North Texas in Denton, and the Universities and INFN of Padova and Torino.     

回旋管的应用研究

文章论述了推广回旋管应用中所碰到的高功率传输,模式变换和辐射尖锐的波束等技术难点,对现有的准光系统提出了改进措施。     

磁偏转电子枪研制核靶

文章叙述了磁偏转电子枪的原理和结构以及用ＥＱＤ－３型电子枪研制各种核靶的工艺过程。     

梯度折射率棒中传播的高斯光束轨迹解析解及其存在条件的讨论

本文提出光束轨迹方程的一般解，导出解析解的存在条件，推广了文献［１］的光线传播理论，文中以一特定梯度折射率棒为例，讨论了高斯光束在棒中的传播特性。     

微波电子回旋共振等离子体技术及其应用

微波电子回旋共振等离子体是淀积薄膜、微细加工和材料表面改性的一种重要手段。由于这种等离子体电离水平高,化学活性好,可以用来实现基片上薄膜的室温化学气相淀积和反应离子刻蚀,因此对于微电子学、光电子学和薄膜传感器件的发展,这种等离子体会具有重要的意义。此外,采用微波电子回旋共振等离子体原理,没有灯丝的离子源可以提高离子源的使用寿命,可以增加离子束的束流密度。可以确信,微波电子回旋共振等离子体的发展,将把离子源技术提高到一个新的水平。显然,这必将对材料表面改性工艺,包括离子注入掺杂等工艺的发展发挥作用。自从1985年以来,为了得到大容积等离子体而发展了微波电子回旋共振多磁极等离子体,这些技术在薄膜技术、微细加工以及材料表面改性中的应用前景是乐观的。我们将在本文中,介绍微波电子回旋共振等离子体的原理及其应用。     

基于DFT插值的宽带波束形成器设计

本文提出一种基于DFT插值的宽带波束形成器设计方法。首先推导了具有频率不变波束图的连续线阵的灵敏度函数与离散线列阵加权系数之间的关系；接着给出了基于DFT插值的宽带波束形成器设计的两个步骤：（1）使用窄带波束形成器的设计方法计算在参考频率下基阵的加权系数；（2）根据参考频率下基阵的权系数与其它子带权系数之间的关系，利用DFT插值的方法求出其它子带的加权系数。最后，给出了一个设计实例说明本文方法的有效性。     

Defects in molecular beam epitaxial GaAs grown at low temperatures

We have utilized a variable energy positron beam and infrared transmission spectroscopy to study defects in GaAs epilayers grown at low temperatures (LT-GaAs) by molecular beam epitaxy. We have measured the Doppler broadening of the positron-electron annihilation gamma ray spectra as a function of positron implantation energy. From these measurements, we have obtained results for the depth profiles of Ga monovacancies in unannealed LT-GaAs and Ga monovacancies and arsenic cluster related defects in annealed LT-GaAs. We have also studied the effects of the Si impurities in annealed LT-GaAs. The infrared transmission measurements on unannealed LT-GaAs furnish a broad defect band, related to As antisites, centered at 0.370 eV below the conduction band.     

New accurate two-noded shear-flexible curved beam elements

 There are two purposes of this work. One is to present two accurate two-noded finite elements which are derived from the potential energy principle and the Hellinger–Reissner functional principle respectively. The second is to show the successful application of the internal displacement parameters in developing a high-order related displacement-rotation interpolation field. Because the derived interpolation field is capable of accurately modeling deformation modes in extreme thin curved beams and nearly straight beams, both shear locking and membrane shocking are avoided. Several standard numerical tests display superior behaviors of the present elements. Received: 5 February 2002 / Accepted: 16 September 2002     

A Novel Channel Predictor Based on Constrained Hidden Markov Model

1　Introduction　Linkadaptationtechniqueisnowwidelyrecognizedasakeysolutiontoincreasethespectralefficiencyofwire lesssystems[1～ 3] .GPRS ,EDGE ,cdma2 0 0 0andWCDMAallincludelinkadaptationasameanstopro videhigherdatarates[4～ 5] .Torealizethepotentialoflinkadaptation ,reliablechannel predictionisneces sary[6 ] .　Therearemanydifferentchannelpredictionmethodsavailablenow ,suchasLongRangePrediction(LRP) [6 ] ,predictionbasedonsubspacesignalprocess ingalgorithms[7] ,predictionbasedonFinit…