碳/碳复合材料CVI工艺中热解碳形成机理的研究

对碳碳复合材料CVI或（CVD）工艺中热碳组织的类型，沉积机理等研究情况进行了简要的综述，并对其进一步研究提出了相应观点。     

Constant thrust programming for a multistage rocket flown in vacuum with a given initial/final thrust-to-weight ratio in an arbitrary stage

The burn time and burnout velocity of a multistage rocket flown vertically in vacuum with constant thrust tangential to the flight path and a prescribed initial/final thrust-to-weight ratio in an arbitrary stage have been determined. The present paper also deals with optimal staging under given conditions of flight.     

液压集成块校核软件的编制和应用

本文叙述了液压集成块校核软件的编制思想和方法，并重点介绍了编制过程中所使用的相关技术，同时给出部分源程序。     

HDTV信源解码器

本论文提出一种基于TMS320C6701 DSP实现HDTV信源解码器的方案。用C6701实现系统控制、解复用、AC-3音频解码,用STi7000视频解码。与现有的HDTV信源解码方案相比,本方案将核心芯片由三片(系统控制+解复用、视频解码和音频解码)减少到两片,有利于系统集成,代表了HDTV信源解码器的发展方向之一。     

Synthesis of LiFePO4 with fine particle by co-precipitation method

LiFePO₄ is a potential candidate for the cathode material of the lithium secondary batteries. A co-precipitation method was adopted to prepare LiFePO₄ because it is simple and cheap. Nitrogen gas was needed to prevent oxidation of Fe²⁺ in the aqueous solution. The co-precipitated precursor shows the high reactivity with the reductive gas, and the single phase of LiFePO₄ is successfully synthesized with the aid of carbon under less reductive conditions. LiFePO₄ fine powder prepared by co-precipitation method shows high rate capability, impressive specific capacity and cycle property.     

Effects of gallia additions on sintering behavior of gadolinia-doped ceria

The effects of gallia additions on the sintering behavior of gadolinia-doped ceria were systematically investigated from the following aspects: the variation in sintered density, the variation in grain size, and the existing forms of Ga₂O₃ in CeO₂.Sintered density increased with increasing Ga₂O₃ content up to 5 mol.% and then it decreased with further addition of Ga₂O₃. Grain size also increased with increasing Ga₂O₃ content up to 5 mol.% and then decreased with further addition of Ga₂O₃. Decrease in grain size was caused by a pinning effect of Ga₂O₃ precipitation at grain boundaries. Lattice constant decreased with increasing Ga₂O₃ content up to 5 mol.%. This decrease will be due to the substitution of smaller Ga³⁺ ions for Ce⁴⁺ ions in the CeO₂ structure. According to the results obtained from scanning electron microscope (SEM) and X-ray diffraction (XRD) analyses, the solubility limit of Ga₂O₃ in Ce_0.8Gd_0.2O_1.9 ceramics can be estimated to be nearly 5 mol.%. The addition of Ga₂O₃ up to the solubility limit was found to promote the sintering properties of Gd₂O₃-doped CeO₂.     

Electrical conductivity and gas sensitivity of Zn-Sb-O thick films

The thick film of Zn-Sb-O was prepared by coating the paste of nanoparticles mixture (Sb₂O₃:ZnO=1:3) on the alumina substrate, followed by sintering at 500-900 °C for 2 h in air. The electrical resistance and gas-sensing properties to benzene, alcohol and acetone of Zn-Sb-O films were found to be dependent on the change of phase structure caused by sintering temperature.     

Effect of hot pressing on processing and properties of BBN ceramics

BBN (BaBi₂Nb₂O₉) is very interesting and promising lead free material with relaxor properties in capacitors, sensors and actuators.     

Novel electro-optic properties of epitaxially grown (Pb, La)(Zr, Ti)O3 (PLZT) thin films derived by advanced sol–gel methods

Advanced sol–gel methods using a secondary solvent addition into (Pb, La)(Zr, Ti)O₃ (PLZT) sol–gel solution and a methanol pre-treatment of sapphire substrates are demonstrated. For the secondary solvent addition, the additive affected the crystallinity and electro-optic (EO) property of PLZT films and only methanol addition can improve them. In addition, the methanol pre-treatment is also appeared to be effective to improve film characteristics.

Through these optimizations, epitaxially grown PLZT thin films on r-cut sapphire are obtained and a high Pockels coefficient which is comparable to those of bulk PLZTs is achieved. It is believed that these PLZT thin films are applicable for integrated EO devices and open the door for the future data communication systems.