Theoretical Analysis of Critical period in Microbend Fiberoptic Sensor

1IntrodctionThesdV8fltsg6Sofffi1CY0bCfldf山CY0ptlCS6fiS0f8f6lflt6llSltyffiDdU18tlflgsliddCtCCtlflg，simpletechnique，highrellabllltyandlowprice，thereformlcrobendfiberoptlcsensorIswidelyusedtomeasurementofstrain，stressandv比rationetc．Inpractice，thesensltlvltyofsensorIsaveryimportantparameter，andthesensltlvltyofmlcrobendf山eroptlcsensorIsmainlyrelat-6dtofoil0WlflgthY66f8CtofS［‘-：ffilCfob6fldsffiplltlld6：fillffib6yofthlCY0b6fldS6Ct10llSsfldffil-crobendperiod，andmlcrobendperio…     

光纤压力传感器微机控制与数据处理系统

本文介绍的光纤压力传感器微机控制与数据处理系统是以8098单片机为核心,配上适量的外围电路所构成。该系统直接利用8098单片机芯片内的A/D模拟输入通道和脉宽调制(PWM)功能来进行数据采集和输出控制信号。该系统还方便地实现与微型打印机的联接,以便将采集的数据保存。整个系统结构简单,成本低,可靠性高,实时控制和测试功能较强,有良好的工业应用价值。     

Electrical characterization of very-narrow-gap bulk HgCdTe single crystals by variable magnetic field hall measurements

Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed on very-narrow-gap bulk-grown Hg_1−xCd_xTe single crystals (0.165 ≤ x ≤ 0.2) at various temperatures (10 to 300K). The electron densities and mobilities are obtained within the one-carrier (electrons) approximation of the reduced-con-ductivity-tensor scheme. The present data together with the selected data set reported by other workers exhibit a pronounced peak when the electron mobility is plotted against the alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-crossing (E_g ≈ 0). The observed position (x ≈ 0.165), height (≈4 x 10² m²Vs), and width (≈0.01 in x) of the mobility-peak can be explained by a simple simulation involving only ionized-impurity scattering. A lower bound of the effective mass is introduced as a fitting parameter to be consistent with the finiteness of the observed electron mobility and is found to be of the order of 10⁻⁴ of the mass of a free electron.     

具有PDEB LB膜的声表面波湿度传感器

介绍一种新型聚炔离子导体湿敏材料－聚对二炔苯的Ｌａｎｇｍｕｉｒ－Ｂｏｌｄｇｅｔｔ成膜原理与制备，淀积有１０层ＰＤＥＢ ＬＢ膜层的声表面波延迟线型湿度传感器的特性。由于ＬＢ成膜技术拉制的膜可以在分子水平上进行定量控制，保证了膜的均匀性和一致性。     

热敏电缆在拉拔减径工艺过程中的性能变化

在拉拔减径工艺的初始阶段，装填于热敏电缆中的氧化物陶瓷热敏材料粉的体积将发生收缩，随后体积不再发生变化。对于不经过热处理的样品，理论分析和实验结果表明，体积收缩停止后，其每米电阻值不随尺寸变化而改变。由于安装等因素引起的芯线电极的位置偏差不公带来样品电阻较大的变化。对于经过热处理的样品，其电阻值在热处理前后及拉拔减径过程中都有较大的变化（可达几个数量级），变化规律较为紊乱。实验分析发现，热处理后的     

Deep levels,electrical and optical characteristics in SnTe-Doped GaSb Schottky Diodes

The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed and its concentration was affected by the Sb₄/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb grown at 550°C under a Sb₄/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized impurity concentration increases proportionally with the sample’s donor concentration, suggesting that the ionized impurity was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb layers were studied by comparing their photoluminescence spectra at 4.5K.     

智能压力传感器

讨论了压阻式智能传感器的设计,并以80C31单片机为核心构成了一个能检测压力、温度的智能传感器,它能实现量程的自动变换、故障的自诊断及数据的处理,通过软件实现了对半导体传感器的零点修正、非线性修正及温度补偿。实验表明,传感器的智能化改善了传感器的性能。     

无线传感器网络MAC层协议的对比研究

无线传感器网络是二十一世纪新兴的网络技术，它的出现使网络的发展进入一个新的阶段。针对无线传感器网络MAC层协议的研究一直是人们普遍关注的问题。总结了近年来的研究成果并针对TDMA，IEEE802．15．4，S—MAC，T—MAC几种典型的MAC层协议进行了对比分析，根据其各自的优点提出将来工作的方向和建议。     

p型碲镉汞液相外延材料Ag掺杂的研究

利用SIMS和变温霍尔测量手段对P型Hg0.77Gd0.23Te液相外延材料的Ag掺杂技术、机理及掺杂碲镉汞材料的性能进行了研究。结果表明采用AgNO3溶液直接浸泡方式对该材料进行掺Ag是成功的，掺杂浓度与被掺杂材料中的汞空位浓度是一致的，掺杂后，P型碲镉汞材料的受主能级比掺杂前有明显的减小，从实验结果可看到掺Ag碲镉汞材料的电学性能在室温下保持稳定。     

硅尖阵列-敏感薄膜复合型阴极真空微电子压力传感器特性的测试

封装、测试了硅尖阵列-敏感薄膜复合型阴极的真空微电子压力传感器，在计算机模拟计算的基础上，对封装好的真空微电子压力传感器进行了实物测试，得出实物测试场发射电流曲线（开启电压低，发射电流曲线与计算机模拟曲线一样，电压45V时发射电流可达到86mA，平均每个硅尖为21μA）、压力特性曲线（呈线性变化，与计算机模拟计算的曲线相近）及灵敏度数据。电压1.5V即可测试并且其压力特性成线性变化，灵敏度为0.3μA/kPa。