喷吹锌粉生产实践

介绍了虹吸雾化法生产锌粉的工艺流程、设计特点及生产中的改进，提出了该工艺生产锌粉的最佳技术条件，同时对可能产生的粉尘爆炸的成因做了分析、提出了预防措施。对生产锌粉用原料的化学成份，通过生产中的探索也提出了要求。     

用固体碳及CO/CO2还原电炉粉尘中氧化锌的研究

用化学试剂和实际电炉粉尘作试样，考察了利用固体碳和CO/CO2进行氧化锌还原的各种影响因素。研究发现，与固 固还原反应相比，气 固还原反应较快，但前者易受温度的影响。在CO/CO2＝10、温度控制在1〖KG-*9〗000～1〖KG-*9〗100 ℃时，可保证电炉粉尘中氧化锌的顺利还原与气化分离。本研究为开发利用移动焦炭层的电炉粉尘处理新工艺提供了理论依据。     

高炉锌危害分析及其控制

由于微量有害元素锌的循环富集给八钢高炉生产带来许多危害,通过调查分析找到了高炉内锌的主要来源,提出了控制有害元素锌的对策及建议。     

湿法炼锌浸出矿浆过滤工艺改造实践

在湿法炼锌生产过程中,当原料锌精矿品位较高时,采用传统的浓密槽进行浸出矿浆的固液分离效果较好。但近年来随着锌精矿品位的不断降低,浓密槽的分离效果越来越差,已不能满足生产需要。为此,广西某厂通过工艺改造,采用厢式压滤机代替浓密槽进行浸出矿浆的过滤,取得了较好的效果。     

锌精矿常压浸出与加压浸出工艺比较

比较了常压浸出与加压浸出两种工艺的机理、流程、技术经济指标、投资以及存在的问题。试验和生产数据表明,加压浸出在技术上和工艺上都更具有吸引力。     

锌液中的合金元素对锌花外观质量影响机理研究

简单介绍了热镀锌产品表面锌花的各种形态,锌液中的合金元素对锌花的形成机理的研究。     

锌渣烟化炉连续吹炼的试验研究

进行了烟化炉连续吹炼的工业试验研究,试验结果表明,该工艺具有流程短,降低能耗,改善作业环境,降低成本的优点。     

Uniformity of gallium doped zinc oxide thin film prepared by pulsed laser deposition

Recently, transparent conducting oxide thin films have attracted attention for the application to transparent conducting electrodes. In this work, we evaluated the uniformity of electrical, optical and structural properties for gallium doped zinc oxide thin films prepared on the 10 × 10 cm² silica glass substrate by pulsed laser deposition. The resistivity, carrier concentration, mobility, bonding state and atomic composition of the film were uniform along in-plane and depth direction over the 10 × 10 cm² area of the substrate. The film showed the average transmittance of 81-87%, resistivity of 1.4 × 10^− 3 Ω cm, carrier concentration of 9.7 × 10²⁰/cm³ and mobility of 5 cm²/Vs in spite of the amorphous X-ray diffraction pattern. The gradual thickness distribution was found, however, the potential for large-area and low temperature deposition of transparent conducting oxide thin film using pulsed laser deposition method was confirmed.     

Deposition of Al-doped ZnO films on polyethylene naphthalate substrate with radio frequency magnetron sputtering

100 nm Al-doped ZnO (AZO) thin films were deposited on polyethylene naphthalate (PEN) substrates with radio frequency magnetron sputtering using 2 wt.% Al-doped ZnO target at various deposition conditions including sputtering power, target to substrate distance, working pressure and substrate temperature. When the sputtering power, target to substrate distance and working pressure were decreased, the resistivity was decreased due to the improvement of crystallinity with larger grain size. As the substrate temperature was increased from 25 to 120 °C, AZO films showed lower electrical resistivity and better optical transmittance due to the significant improvement of the crystallinity. 2 wt.% Al-doped ZnO films deposited on glass and PEN substrates at sputtering power of 25 W, target to substrate distance of 6.8 cm, working pressure of 0.4 Pa and substrate temperature of 120 °C showed the lowest resistivity (5.12 × 10^− 3 Ω cm on PEN substrate, 3.85 × 10^− 3 Ω cm on glass substrate) and high average transmittance (> 90% in both substrates). AZO films deposited on PEN substrate showed similar electrical and optical properties like AZO films deposited on glass substrates.     

屏蔽紫外线纳米ZnO/TiO_2复合粉体的制备与性能研究

采用沉淀法制备了纳米ZnO/TiO2复合粉体,利用XRD、TEM和激光粒度仪对其成分、形貌和粒度进行了表征。由正交试验优化出的较佳工艺条件是:反应溶液的pH值为7、添加剂HBH500的量为1mL、Zn2 /Ti4 摩尔比为1∶1。结果表明,纳米ZnO/TiO2复合粉体在整个UVA和UVB波段都能有效屏蔽紫外线,当煅烧温度为800℃时,复合粉体粒径D50为63nm,能屏蔽90%以上的紫外线。