Cover Picture: Toward Large‐Scale Alignment of Electrohydrodynamic Patterning of Thin Polymer Films (Adv. Funct. Mater. 15/2006)

By integrating lithography and self‐assembly via electrohydrodynamic instabilities, Russel and co‐workers are able to guide initially flat polymer films to evolve into periodic arrays of pillars over regions much greater in extent than their natural domain sizes, as detailed on p. 1992. Novel structures that involve a combination of linear ridges and pillars are also produced, mainly as as result of the dynamic merging among preformed pillars. To pattern thin polymer films via electrohydrodynamic instabilities, we design and utilize two different kinds of mask patterns to guide pillars into alignment over regions much greater in extent than their natural domain sizes. First, narrow protruding ridges that intersect to form regular patterns on the mask trigger the growth of pillars beneath. Later, square and triangular packings of pillars develop in the regions enclosed by those ridges, preserving the registry from one domain to the next over a much larger area than within individual domains in unpatterned portions of the mask. Second, small square protrusions that are prealigned into a large regular array on the mask guide the formation of square packings of pillars in domains that conform to the mask, forming a large array of pillars. Novel structures involving a combination of linear ridges and pillars are also produced mainly due to the dynamic merging among preformed pillars. Finally, we find vertex symmetry of the mask pattern is necessary for generating and preserving ordered patterns on the polymer film.     

双辊式薄带连铸工艺研究

进行了双辊法薄带连铸的试验研究。阐述了双辊连铸机浇注系统的研究结果、工艺参数对连铸的影响，以及18—8不锈钢薄带坯的凝固组织和冷轧特性，该工作为薄带连铸的中间生产机组的研究奠定了基础。     

The initial behaviour of freshly etched copper in moderately acid, aerated chloride solutions

When freshly etched samples of various types of copper were exposed in moderately acid, aerated chloride solutions, two phenomena were observed. First the corrosion potential and the pH of the solution decreased over a shorter time, then the potential increased over a long period (600-1500 min), following an s-shaped pattern. Increase in pH during the second stage was avoided using a pH-stat. The corrosion rate increased little or not at all over the entire period. A tentative interpretation of the short-term behaviour is presented with some reservation. The long-term development of the potential suggests phase formation or transformation following the Avrami pattern. By suitable derivations it was possible to fit the development of potentials to the Avrami equation. Subsequent examinations by Auger spectroscopy proved the presence of thin layers of Cu₂O on the copper surfaces, increasing in thickness with exposure time. The dissolution kinetics can be described in terms of two parallel electrochemical reactions and a simultaneous non-electrochemical dissolution reaction.     

Structural and electrical properties of brush plated ZnTe films

Zinc telluride thin films were deposited by the brush plating technique at a potential of −0.90 V (SCE) on conducting glass and titanium substrates at different temperatures in the range 30–90 °C. The films were polycrystalline in nature with peaks corresponding to the cubic phase. Direct band gap of 2.30 eV was observed. XPS studiers indicated the formation of ZnTe. Depth profiling studies indicated a uniform distribution of Zn and Te throughout the entire thickness. EDAX measurements were made on the films and it was found that there was a slight excess of Te. The carrier concentration was found to vary from 10¹⁴–10¹⁵ cm⁻³ with increase of substrate temperature. The mobility was found to vary from 5 to 60 cm² V⁻¹ s⁻¹.     

Influence of the deposition atmosphere on the characteristics of Pd–Mg thin films prepared by pulsed laser deposition

Bilayered palladium (30 nm thick)–magnesium (350 nm thick) thin films were prepared using the pulsed laser deposition technique in the presence of various background gases (Ar, He and a mixture He + H₂) under different partial pressures (47 and 27 Pa). According to the deposition atmosphere, the Pd/Mg interface shows either a sharp or an extended transition. The electrochemical hydriding properties and the mechanical stability upon cycling of the Pd/Mg film are greatly improved when an extended «intermixing» zone between the Pd and Mg layers is present. The Pd–Mg films prepared under pure helium fulfill these conditions.     

Thin film deposition on a corrugated surface: A molecular dynamics approach

This paper presents the use of molecular dynamics (MD) simulation in the investigation of the surface topography of early-stage film growth on a GMR (giant-magnetoresistance) corrugated structure. The size of the simulated system is limited in order to reduce the computational workload. The numerical model adopts the Morse potential and the Verlet-leapfrog time evolution scheme [R.W. Hockney, 1970; D. Potter, 1972 (Chapter 5). [1]] to describe the atomic interactions which take place between the atoms. The impact energy transferred from the incident atoms to the substrate is modeled by rescaling the atoms within the upper substrate layers. It is found that the important properties of the film-substrate system may be obtained after the deposition of just several atomic layers. The influence of the impact velocity upon the coating parameters is investigated by varying the incident energy of the deposited atoms. The current results indicate that the surface coverage is poor, when atoms are deposited at low incident energies upon a low temperature substrate. At a higher incident energy, the deposited film tends to exhibit a quasi-layer-by-layer growth mechanism, which results in an improved surface coverage. Finally, it is demonstrated that a distinct quasi-fluid behavior is evident on the substrate when the atoms are deposited at high incident energies.     

Effect of 8 MeV electron irradiation on electrical properties of CuInSe2 thin films

Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe₂ thin films have been investigated. The n-type CuInSe₂ films in which the carrier concentration was about 3×10¹⁶ cm⁻³, were epitaxially grown on a GaAs(0 0 1) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence <3×10¹⁶ e cm⁻². As the electron fluence exceeded 10¹⁷ e cm⁻², both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm⁻¹, which is slightly lower than that of III–V compound materials.