Multilayered substrate integrated waveguide 4 × 4 butler matrix

In this article, a multilayered substrate integrated waveguide (SIW) Butler matrix beam‐forming network is proposed, designed, and demonstrated at 24 GHz for automotive radar system applications. The proposed low‐cost SIW structure can be used to develop a highly integrated multibeam antenna platform in automotive radar systems and other applications. In this structure, an SIW H‐plane coupler is optimized with an H‐plane slit to provide the required phase shift. A class of SIW E‐plane 3‐dB couplers in doubled layer substrate are studied and designed as the fundamental building blocks to avoid crossovers usually required in the construction of a Butler matrix. A 4 × 4 matrix is investigated and designed, which shows excellent performance over 22–26 GHz frequency band. Two types of antenna are tested with the proposed matrix scheme. First, an antipodal linearly tapered slot antenna (ALTSA) is incorporated into the Butler matrix to verify the broadband performances. Second, a longitudinal slotted waveguide antenna array is examined to generate radiation patterns in the broadside direction. Measured results agree well with simulated counterparts, thus validating the proposed multilayer SIW design concepts. In the next sections, the use as feeding networks for providing the reconfigurability operation of an antenna will be illustrated. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE , 2012.     

A new type of the air‐filled substrate integrated gap waveguide resonator

This article presents the design and analysis of an air‐filled substrate integrated gap waveguide (ASIGW) resonator. The electromagnetic field of each resonant mode in the resonator is studied by theoretical modeling and EM simulation. Besides, the relationship between the dimensions and Q_u is analyzed and the Q_u of the resonator can be as high as 2080 at Ku band. Compared with conventional rectangular waveguide resonator and gap waveguide (GW) resonator, the proposed ASIGW resonator can be fabricated more easily. Compared with the substrate integrated waveguide resonator, the ASIGW resonator is more tolerant with dimensional errors and with less degenerate modes. As an example, a fifth‐order band‐pass filter based on the ASIGW resonators is presented to verify the previous conclusions.     

一种非谐振式MEMS电磁能量收集器

介绍了一种新型非谐振式微电子机械系统(MEMS)电磁振动能量采集器的设计、微加工和表征测试.该能量收集器由MEMS结构、线圈、小型化NdFeB磁体和陶瓷基板组成.建立结构模型对结构固有频率、位移和应力进行仿真.利用MEMS技术制备能量收集器结构和Al线圈等关键部件,并结合嵌有永磁体的陶瓷基板进行组装,在组装过程中使用C...     

液晶显示玻璃基板激光切割热应力场的有限元仿真

激光切割玻璃基板是一个复杂的激光与材料相互作用的过程。为了掌握切割过程中热应力场的动态分布,提高切割质量,提出了一种热应力场的仿真方法。在有限元软件Ansys环境下,建立了三维液晶显示玻璃基板激光切割热应力场的有限元分析模型。采用间接法方式对温度场和热应力场进行耦合;通过APDL参数化编程语言,实现了对激光移动热源及射流冲击换热模型的仿真。仿真结果表明:在切割过程中,激光照射区内表现为压应力,压应力最大值出现在热源中心处;在激光光斑前、后一段距离内及冷却点附近均表现为拉应力。增大冷却效果及减小冷却点与激光光斑间的距离,均可增大拉应力δy的值。     

The investigation of electrodeposited Cu2O/ITO layers by chronocoulometry process: effect of electrical potential

The thin films of Cu₂O are deposited by electrodeposition technique onto indium tin oxide (ITO)-coated glass substrate at different potentials. The precursor is an aqueous solution which contains respectively 0.05 M of CuSO₄ and citric acid at kept temperature of 60℃ and the applied potential varies within the {-0.4 V,-0.7 V} SCE range. Based on the chronocoulometry (CC) process, the electrochemical, structural and optical parameters are determined. We measured the current as function of potential within the {-0.4 V,-0.7 V} range and the higher current is found to be within the {-0.7 V,-0.3 V} band. The grain sizes are of 12.12 nm and 35.47 nm according to (110) and (221) orientations respectively. The high textural coefficient of 0.943 is recorded for the potential-0.7 V. The transmittance of 72.25 %, within the visible band, is obtained for the as-grown layer at-0.4 V and the band gap is found to be 2.2 eV for the electrodeposition potential of-0.7 V.     

The effects of process conditions and substrate on copper MOCVD using liquid injection of (hfac)Cu(vtmos)

Copper MOCVD (metalorganic chemical vapor deposition) using liquid injection for effective delivery of the (hfac)Cu(vtmos) [1,1,1,5,5,5-hexafluoro-2,4-pentadionato(vinyltrimethoxysilane) copper(I)] precursor has been performed to clarify growth behavior of copper films onto TiN, <100> Si, and Si₃N₄ substrates. Especially, we have studied the influences of process conditions and the substrate on growth rates, impurities, microstructures, and electrical characteristics of copper films. As the reactor pressure was increased, the growth rate was governed by a pick-up rate of (hfac)Cu(vtmos) in the vaporizer. The apparent activation energy for copper growth over the surface-reaction controlled regime from 155°C to 225°C was in the range 12.7–32.5 kcal/mol depending upon the substrate type. It revealed that H₂ addition at 225°C substrate temperature brought about a maximum increase of about 25% in the growth rate compared to pure Ar as the carrier gas. At moderate deposition temperatures, the degree of a <111> preferred orientation for the deposit was higher on the sequence of <Cu/Si<Cu/TiN<Cu/Si₃N₄. The relative impurity content within the deposit was in the range 1.1 to 1.8 at.%. The electrical resistivity for the Cu films on TiN illustrated three regions of the variation according to the substrate temperature, so the deposit at 165°C had the optimum resistivity value. However, the coarsened microstructures of Cu on TiN prepared above 275°C gave rise to higher electrical resistivities compared to those on Si and Si₃N₄ substrates.     

纸基柔性RFID标签金属天线制备

纸张基材具备的多孔特性使其表面的液体材料产生了渗透、扩散等现象,因此在纸基的表面利用化学镀形成RFID标签金属天线极为困难。针对这个问题,文中采用氯化亚锡胶体溶液对纸张表面进行处理以避免转印油墨渗透。为进一步提高RFID标签天线金属层的导电性和附着力,采用壳聚糖溶液处理纸张基板表面以引入对催化离子具有吸附性的功能基团。SEM、XRD、EDS和附着力测试证明,文中所制备RFID标签天线的金属层表面具有致密、结晶度高、附着力良好、电阻率低(2.58×10 ^-8 Ω·cm)且机械性能良好(1 000次弯曲)等优点。     

Pixel‐Structured Scintillator with Polymeric Microstructures for X‐Ray Image Sensors

We introduce a pixel‐structured scintillator realized on a flexible polymeric substrate and demonstrate its feasibility as an X‐ray converter when it is coupled to photosensitive elements. The sample was prepared by filling Gd₂O₂S:Tb scintillation material into a square‐pore‐shape cavity array fabricated with polyethylene. For comparison, a sample with the conventional continuous geometry was also prepared. Although the pixelated geometry showed X‐ray sensitivity of about 58% compared with the conventional geometry, the resolving power was improved by about 70% above a spatial frequency of 3 mm^?1. The spatial frequency at 10% of the modulation‐transfer function was about 6 mm^?1.     

Si(111)衬底上GaN外延材料的应力分析

对Si(111)衬底上GaN外延材料的应力随着低温AlN插入层数的变化进行了分析研究。通过喇曼散射谱在高频E2(TO)模式下的测试分析发现,随着低温AlN插入层数的增加,GaN材料的E2(TO)峰位逐渐接近体GaN材料的E2(TO)峰位(无应力体GaN材料的E2(TO)峰位为568cm-1),计算得出GaN材料的应力从1.09GPa减小到0.42GPa。同时,使用室温光荧光谱进行了分析验证。结果表明,Si衬底上GaN外延材料受到的是张应力,通过低温AlN插入层技术可以有效降低GaN材料的应力,并且最终实现了表面光亮的厚层无裂纹GaN材料。     

液体-压电晶片界面兰姆波激发的理论研究

对液体 -压电晶片结构中叉指换能器所激发的兰姆波进行了理论研究和数值分析 ,给出了兰姆波的相速度、叉指换能器激发兰姆波的机电耦合系数与压电晶片的归一化厚度、晶体切向之间的关系曲线 ,为液体密度兰姆波声传感器的研究提供了理论基础。