交流变频调速技术在二辊轧机压下系统中的应用

介绍一种采用变频调速技术控制的二辊轧机压下系统。该系统可控制轧机压下系统的速度在工艺要求的范围内无级可调，压下量以数字动态显示，控制准确、操作方便。文中对系统的组成及工作原理作了较详细的介绍。     

隧穿问题的数值算法

本文给出一种新的数值方法，用以计算隧道效应中的透射系数和相移。这个方法适用于任意形状的势垒，不仅可以计算透射系数，还可以计算透射波和反射波的相位。分析表明该方法具有很高的精度。     

超高层建筑物下嵌岩桩荷载传递性状的长期观测

对美国费城自由广场一号塔楼下的Ｇ一１０号嵌岩桩（８．８ｍＸ２．６～３．０ｍ，设计荷载５３８４９ｋＮ）在成桩后数月及上部结构施工期间和竣工后成功地进行了荷载传递性状的连续观测。本文介绍该桩的地质条件、桩身埋设的量测元件以及历时两年半的观测成果。观测表明，该桩在不同荷载水平下桩顶荷载的６０％～７０％始终由桩侧阻力分担。这一成果与第一作者先前根据嵌岩桩静载试验结果作出的结论相吻合。     

Stress in Thin Films;Diffraction Elastic Constants and Grain Interaction

Untextured bulk polycrystals usually possess macroscopically isotropic elastic properties whereas for most thin films transvers isotropy is expected,owing to the limited dimenionlity .The usually applied models for the calculation of elstic constants of polycrystals from single crystal elastic contants(so-called grain interaction models)erroneously predict macroscopic isotropy for an(untextured) thin film.This paper presents a summary of recent work where it has been demonstrated for the first time by X-ray diffraction analysis of stresses in thin films that elastic grain interaction can lead to macroscopically anisotropic behaviour (shown by non-linear sin^2φ plots).A new grain interaction model,predictin the macroscopically anisotropic behaviour of thin films,is proposed.     

A new precipitate phase in Al-4wt. % Cu thin-film interconnects

We report here the identification of a new precipitate phase in thin-film Al-4wt.%Cu metallization used for interconnects on integrated circuits. The phase is based on a trigonal distortion of a face centered cubic lattice. Computer simulation of electron diffraction intensities suggests that the basis structure is isomorphous with Al₂Ca but with a large and ordered population of vacancies on Cu sites. The reason for the formation of the new phase and its implications for electromigration reliability are discussed.     

功率管焊接质量射线检测

介绍采用射线方法检测功率管芯片与基座之间的焊接质量。试验证明，选用合适的透照参数可使X射线照相和X射线实时成像对焊接部位的检测均得到较高的对比灵敏度，但X射线照相法成本低廉，一次可透照多个工件，效率高，为该功率管焊接质量的理想检测方法。     

完善组装工艺与实施统计过程控制(SPC)

本文主要说明了X射线分层摄影法的在线检测，统计过程控制（SPC）在BGA装配中的应用，并通过BGA定位、制程能力、焊料桥接、焊料开路、焊料短路和把SPC应用于BGA，进一步简术了装配工艺与履行统计过程控制的关系。     

The hydration phase and pore structure formation in the blends of sulfoaluminate-belite cement with Portland cement

Sulfoaluminate-belite (SAB) cements are an attractive class of low-energy cements from the viewpoint of saving energy and releasing less CO₂ into the atmosphere during their production. Their hydraulic activity, however, does not match that of the ordinary Portland cement (PC) and needs improvement before they can be used on their own. However, SAB cements when blended with PC have the potential to be used effectively in traditional applications as shown by this study. Mortars made with blends of SAB cements and PC, and a cement-to-sand ratio of 1:3 by weight and a water-to-cement ratio of 0.5, indicate a superior protection against corrosion of steel to those made with blends of PC and blast-furnace slag (BFSPC). The prepared mortars were stored at 20 °C for 90 days under either a 60% relative humidity (RH)-dry air, or 100% RH-wet air conditions. With further improvement in the SAB cement quality through better understanding of their characteristics, a genuine competition between SAB/PC and BFSPC can be expected in practice.     

A hexane solution deposition of SnS2 films from tetrabutyltin via a solvothermal route at moderate temperature

SnS₂ films have been deposited on glass and alumina plate substrates by the reactions between an organotin precursor [tetrabuyltin, (CH₂CH₂CH₂CH₃)₄Sn] and carbon disulfide in n-hexane at the temperature range 180-200 °C for 10-40 h. The reaction system was oxygen free and applied at a moderate temperature. The films so prepared were characterized by techniques of X-ray diffraction, Scanning electron microscopy, Raman and Mössbauer spectroscopies. The films deposited on glass as well as on alumina plate have an average thickness of 30 μm, but have different rose-like morphologies, which are influenced by both the anisotropic growths of crystals and the different substrate structures. Photoluminescence measurements show that the films have an emission peak at approximately 590 nm.