高Q中介微波介质陶瓷的研制

用传统固相反应法制备了CaTiO3-Ca(Zn1/3Nb2/3)O3-CaSmAlO4微波介质陶瓷材料。探讨了各组分比例变化对陶瓷烧结及微波介电性能的影响。通过XRD、SEM等分析测试手段对材料的晶相组成、显微结构进行了研究。所研究的该系列陶瓷材料大部分都具有良好的微波介电性能:εr为45～50,Q·f0>38000GHz,τf<10×10–6℃–1。     

Investigations on the nanostructures of GaN,InN and InxGa1−xN

A controllable approach to the formation of III- nitride nanocrystalline structures using hydrothermal assisted method is presented. The structural and morphological properties of the prepared nanostructures are analyzed using X-ray diffraction, Fast Fourier Transformation and transmission electron microscope techniques. The temperature dependent structural formation of nitride nanostructures have been systematically investigated using X-ray diffraction. Raman spectra of the samples grown at optimized condition exhibited different phonon modes of the respective nitrides (GaN, InN and In_xGa_1−xN). Nanoparticles and nanorods formation of the indium nitride and indium gallium nitride are observed in the TEM micrographs. FFT analysis revealed that the synthesized III-nitride nanostructures are of good crystalline quality. Nanorods of these nitrides showed better crystalline quality than the nanoparticles in the FFT reflections.     

Stress evolution during Ni-Si compound formation for fully silicided (FUSI) gates

The stress (force) evolution during the formation of different Ni silicide phases was monitored by in situ curvature measurements, for the reaction of thin Ni films of various thicknesses with 100 nm polycrystalline-Si deposited on oxidized (1 0 0) Si substrates. The silicide phase formation was also monitored by in situ X-ray diffraction, allowing to match and interpret the stress evolution in terms of the formation of the different silicide phases. We found that stresses developed during the formation of the different silicides can be explained qualitatively in terms of the corresponding volume changes at the reacting interfaces. Furthermore, the matching between XRD and force curve reveals that the highest compressive stress is related to the formation of the Ni₃₁Si₁₂ phase, and that the stress formed is relaxed when the reaction is completed.     

用粉末X射线衍射数据确定晶胞参数的方法

介绍了从晶体粉末Ｘ射线衍射数据确定其晶胞参数的方法。并用该法求得四方体心晶体结构的锂铜酞花菁ＬｉＣｕＰｃ的晶胞参数ａ＝１．７３６７ｎｍ，ｃ＝１．３６４０ｎｍ，三方晶系Ｒ＾３ｍ空间群结构的锂钴氧化合物Ｌｉ０．５ＣｏＯ２按六方格子划分的晶胞参数ａ＝０．２８０８ｎｍ，ｃ＝１．４０７９ｎｍ。     

Synthesis and characterization of ceria quantum dots using effective surfactants

The stable and crystalline phase of different surfactants (CTAB, PEG and SDS) capped CeO₂ nanoparticles were directly synthesized by chemical precipitation method at room temperature. The effects of surfactants on the structural and optical properties of nanoparticles are characterized. The optical properties of the nanoparticles were investigated by UV–visible and PL spectroscopy. The effects of surfactants with observed band shifts are due to quantum confinement effect. The optical band gap values are determined by simple energy wave equation and Tauc plot method. The observed particle sizes are very closer to the Bohr exitonic radius. The emission bands such as violet, blue, green and orange are observed in PL spectra. The PL integrated intensity ratio of the UV emission to the deep-level green emission (I_UV/I_DLE) for CTAB, PEG and SDS capped CeO₂ nanoparticles are observed. The XRD measurement shows that CeO₂ has cubic fluorite structure having the particle size 6–10 nm. The lattice strains were detected by Williamson–Hall plot method. The surface morphology of the nanoparticles is studied by SEM and FESEM analysis. TEM images show that the particles are nearly spherical in shape with diameter of 5–10 nm. Using FTIR spectra, the functional groups of the ceria are identified.     

超高分子量聚乙烯高温环境抗冲击能力研究

为研究超高分子量聚乙烯纤维(UHMWPE)在高温环境下的热性能和力学特性,对不同高温处理1h后的UHMWPE进行了SEM、DSC以及XRD分析。结果表明:150℃处理后纤维表面和断面已失去原有结构,XRD衍射峰峰值明显降低;DSC结果显示,与高温试验前及其它高温处理后有2个较大的吸热峰不同,150℃处理的样品仅有1个吸热峰,且峰值较低。对纤维包覆成的CDF进行爆轰性能试验,结果表明150℃处理后的样品抗冲击强度严重下降,已不能满足CDF的要求。     

Effects of annealing on nanocrystalline Bi2S3 thin films prepared by chemical bath deposition

Nanocrystalline Bi₂S₃ thin films are deposited on tin chloride treated glass substrate from the solution containing bismuth nitrate, triethanolamine (TEA) and thioacetamide (TAM) at a bath temperature 318 K. The prepared films are subsequently annealed at different temperatures for studying the effect of thermal treatment on the structural, surface morphology, optical and electrical properties of the films. The X-ray diffraction studies affirmed that the deposited films are orthorhombic structures with average crystallites size of 14 nm to 28 nm. The scanning electron microscopy (SEM) images revealed that the films comprise of grains of spherical shape of unequal size. It is also observed that the small particles aggregate together to form a larger cluster. The average grain sizes determined from the TEM images are smaller than the crystallites size obtained from the XRD studies. The optical band gap of the films has been estimated to be 2.24–2.05 eV for the as-prepared and annealed films, respectively. The electrical conductivity of the as prepared Bi₂S₃ films at room temperature is found to be in the order of 10⁻³ Ω⁻¹ m⁻¹.     

Effect of 80 MeV Au ions irradiation on CuInTe2 single crystals grown by CVT technique

Single crystals of CuInTe₂ (CIT) have been grown by the chemical vapor transport (CVT) technique using iodine as the transporting agent. CIT crystals were irradiated with 80 MeV Au⁸⁺ ions at room temperature at different fluences. The surface roughness was measured using an atomic force microscope (AFM). It was found to increase from 9.319 nm in the as-grown sample to 61.169 nm in the sample irradiated with a fluence of 1×10¹³ ions/cm². The intensities of the X-ray diffraction peaks corresponding to the (112) and (004/200) planes of the irradiated sample decrease with respect to the fluences. The full-width at half-maximum (FWHM) of X-ray rocking curves was measured as a function of different ion fluences. The FWHW increases with increase of ions fluences. This is attributed to the irradiation-induced partial amorphization of the top surface of the CIT crystals. The fall in absorption coefficients with photon energy is sharper for as-grown samples than irradiated samples. The band gap value gradually decreases from 1.04 to 0.977 eV upon Au⁸⁺ ions’ irradiation with a fluence of 1×10¹³ ions/cm². Photoluminescence (PL) measurements show a red shift compared to the as-grown CIT single crystals. The Raman modes of A₁ (high) and E and/or B₂ (LO) are observed at 123 and 173 cm⁻¹ in as-grown CIT single crystals, respectively. As the ion fluence is increased, the Raman frequency increases and the curves broaden. The above observed features are related to the large electronic energy transfer of the Au beam to the CIT crystals.     

Elaboration and characterization of a KCl single crystal doped with nanocrystalsof a Sb2O3 semiconductor

Undoped and doped KCl single crystals have been successfully elaborated via the Czochralski（Cz） method.The effects of dopant Sb₂O₃ nanocrystals on structural and optical properties were investigated by a number of techniques,including X-ray diffraction（XRD）,scanning electron microscopy（SEM）,energy dispersive X-ray（EDAX） analysis,UV-visible and photoluminescence（PL） spectrophotometers.An XRD pattern of KCl:Sb₂O₃ reveals that the Sb₂O₃ nanocrystals are in the well-crystalline orthorhombic phase.The broadening of diffraction peaks indicated the presence of a Sb₂O₃ semiconductor in the nanometer size regime.The shift of absorption and PL peaks is observed near 334 nm and 360 nm respectively due to the quantum confinement effect in Sb₂O₃ nanocrystals.Particle sizes calculated from XRD studies agree fairly well with those estimated from optical studies.An SEM image of the surface KCl:Sb₂O₃ single crystal shows large quasi-spherical of Sb₂O₃ crystallites scattered on the surface.The elemental analysis from EDAX demonstrates that the KCl:Sb₂O₃ single crystal is slightly rich in oxygen and a source of excessive quantities of oxygen is discussed.