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71.
72.
The influence of the substrate nature on the structure and morphology of ITO thin films grown by thermal evaporation in vacuum is investigated. The as-prepared metal films with Sn/In molar ratio of 0.1 were subsequently annealed for 2 h at 723 K in air (to obtain tin doped indium oxide), then annealed in vacuum at 523 K, followed by UV irradiation (to reduce the electrical resistivity). Irrespective of substrate nature, XRD data evidence a (222) preferential orientation in films. Substrate nature, annealing in vacuum and UV irradiation influence the structure, morphology, optical, electrical and surface wetting properties of the films' surface. 相似文献
73.
Sintered Nd-Fe-B magnet was manufactured by advanced equipment via a SC (Strip casting) technology.It has integrative performance. 相似文献
74.
75.
M. Liu Q. Fang G. He L.Q. Zhu S.S. Pan L.D. Zhang 《Materials Science in Semiconductor Processing》2006,9(6):876
High-k HfOxNy thin films have been grown by radio frequency (rf) reactive sputtering of metal Hf target in N2/Ar/O2 ambient at different substrate temperatures. The chemical compositions of the films have been investigated as a function of substrate temperature by X-ray photoelectron spectroscopy (XPS). XPS measurements showed that nitrogen concentration increases with an increase in substrate temperature. Room-temperature spectroscopic ellipsometry (SE) with photon energy 0.75–6.5 eV was used to investigate the optical properties of the films. SE results demonstrated that refractive index n increases with an increase in substrate temperature. Based on TL parameters which were obtained from the best fit results used in a simulation of the measured spectra, meanwhile, we conclude that the energy band gap (Eg) decreases with an increase in substrate temperature. 相似文献
76.
纳米薄膜的分类、特性、制备方法与应用 总被引:5,自引:0,他引:5
介绍了纳米薄膜的分类以及纳米薄膜的光学、力学、电磁学与气敏特性;综述了现有的溶胶鄄凝胶法、LB鄄膜法、电化学沉积法、化学汽相沉积、低能团簇束沉积法、真空蒸发法、溅射沉积、分子与原子束外延、分子自组装等纳米薄膜制备技术;概括了纳米薄膜的应用。 相似文献
77.
78.
Kenji Nomura Hiromichi OhtaKazushige Ueda Toshio Kamiya Masahiro HiranoHideo Hosono 《Thin solid films》2003,445(2):322-326
We have investigated the characteristics of transparent metal-insulator-semiconductor field-effect transistors (MISFETs) fabricated using InGaO3(ZnO)m (m=integer) single-crystalline thin films as n-channel layers and amorphous alumina as gate insulator films. The MISFETs exhibit good characteristics such as insensitivity to visible light illumination, off-current as low as ∼1 nA with a positive threshold voltage of ∼3 V and on/off current ratio of 105. The field-effect mobility increased from ∼1 to ∼10 cm2 (V s)−1 as the m-value increased. Room temperature Hall mobility also increased. However, unexpectedly these values were lower than the field-effect mobility. It is explained by existence of shallow localized state in the homologous compounds. 相似文献
79.
MoSi2-based intermetallics containing different volume fractions of MoB or Mo5Si3 were fabricated by hot-pressing MoSi2, MoB, and Mo5Si3 powders in vacuum. Both classes of alloys contained approximately 5 vol.% of dispersed silica phase. Additions of MoB or Mo5Si3 caused the average grain size to decrease. The decrease in the grain size was typically accompanied by an increase in flexure strength, a decrease in the room temperature fracture toughness, and a decrease in the hot strength (compressive creep strength) measured around 1200 °C, except when the Mo5Si3 effectively became the major phase. Oxidation measurements on the two classes of alloys were carried out in air. Both classes of alloys were protected from oxidation by an in-situ adherent scale that formed on exposure to high temperature. The scale, although not analyzed in detail, is commonly recognized in MoSi2 containing materials as consisting mostly of SiO2. The MoB containing materials showed an increase in the scale thickness and the cyclic oxidation rate at 1400 °C when compared with pure MoSi2. However, in contrast with the pure MoSi2 material, oxidation at 1400 °C began with a weight loss followed by a weight gain and the formation of the protective silica layer. The Mo5Si3 containing materials experienced substantial initial weight losses followed by regions of small weight changes. Overall, the MoB and Mo5Si3 additions to MoSi2 tended to be detrimental for the mechanical and oxidative properties. 相似文献
80.
焊接方法对双相不锈钢焊接接头力学性能的影响 总被引:2,自引:0,他引:2
研究了不同焊接方法对SAF2205双相不锈钢板焊接接头金相组织和力学性能的影响,结果表明,采用不同焊接方法得到的焊接接头的铁素体与奥氏体两相比例不同,使焊接接头的力学性能存在较大差异,对实际生产中SAF2205双相不锈钢的焊接具有一定的指导意义。 相似文献