Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy

Reflectance anisotropy spectroscopy (RAS) has been used to study As-by-P exchange during metalorganic vapor phase epitaxy. The study focuses on the processes occurring during switching from GaAs to GaInP, especially the effect of purging PH₃ over a GaAs surface. GaAsP/GaAs superlattices of different periodicity were grown and the P-content was determined by high-resolution x-ray diffraction and correlated to the RAS spectra. From the temperature dependence of the P-content, an activation energy of 0.56 eV was estimated for the incorporation mechanism. In addition to the insights into the processes at mixed group-V heterointerfaces, our study demonstrates the reproducibility of RAS transients that thus can be used for process monitoring.     

用层次分析法(AHP)确定煤和瓦斯突出中的有关参数

介绍了井下瓦斯突出的原因 ,详细阐述了瓦斯突出的有关参数的确定方法。     

Radiation transmission through a composite pure water layer of uniform and depth-dependent extinction characteristics

The paper describes the calculation of the beam solar radiation transmission across the uniform salinity upper convecting zone (UCZ) and the salinity stratified gradient zone (GZ), when the extinction coefficient is not only wavelength but also salinity-concentration dependent, assuming that the effect of scattering to be negligible. The results are useful in determining the effects of dissolved salt ions on pure water transmission, at least according to the existing measured data in the literature.     

航空齿轮表面硬化层断裂性能研究

按照航空齿轮的具体工艺过程，对材料12Cr2Ni4A的拉伸试样和断裂试样进行设计和加工，通过三点弯曲实验，重点研究了齿轮材料硬化层的硬度分布，硬化试样拉伸力学性能参数和断裂性能参数，实验结果表明，所采用试样的加工工艺方案是可行的，所获得的Kc基本反映我国航空硬化齿轮材料的断裂性能特征，为定量预测航空硬化齿轮疲劳寿命提供实验和理论分析的依据。     

Compact equivalent circuit model of two‐layer spiral inductors

A compact lumped‐element equivalent circuit model of two‐layer integrated spiral inductors on silicon substrates is developed in this article. Based on this proposed model, excellent agreements are achieved between the measured and simulated S‐parameters for different inductors. Also, both self‐ and mutual inductances of two‐layer inductors are accurately extracted, and their overall performances are understood clearly. © 2003 Wiley Periodicals, Inc. Int J RF and Microwave CAE 13: 148–153, 2003.     

Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition

We report the results of studies which have been made on heteroepitaxial layers of GaAs and AlGaAs grown by metalorganic chemical vapor deposition on composite substrates that consist of four different types of heteroepitaxial layered structures of Ge and Ge-Si grown by molecular beam epitaxy on (100)-oriented Si substrates. It is found that of the four structures studied, the preferred composite substrate is a single layer of Ge ∼1 μm thick grown directly on a Si buffer layer. The double-crystal X-ray rocking curves of 2 μm thick GaAs films grown on such substrates have FWHM values as small as 168 arc sec. Transmission electron micrographs of these Ge/Si composite substrates has shown that the number of dislocations in the Ge heteroepitaxial layer can be greatly reduced by an anneal at about 750° C for 30 min which is simultaneously carried out during the growth of the GaAs layer. The quality of the GaAs layers grown on these composite substrates can be greatly improved by the use of a five-period GaAs-GaAsP strained-layer superlattice (SLS). Using the results of these studies, low-threshold optically pumped AlGaAs-GaAs DH laser structures have been grown by MOCVD on MBE Ge/Si composite substrates.     

约束层阻尼夹芯板动态特性分析

本文给出了新的建立约束层阻尼薄板动力学模型的方法。粘弹性材料的本构关系随温度和频率变化,难以对粘弹结构进行动特性分析及控制研究,本文采用GHM方法描述弹性材料的本构关系,将粘弹性材料的动力特性描述与工程上最常用的有限元分析结合起来,建立了悬臂约束层阻尼板的动力学模型,计算了约束层阻尼夹芯悬臂板的模态参数,计算结果同其它方法相比,精度高且更接近于实验结果,同时与ANSYS5.5及NASTRAN70.7的计算结果基本一致,表明本文给出的方法是准确可靠的。     

明渠湍流床面附近跃移层面颗粒浓度垂线分布

本文以动理学理论的Boltzmann方程为基础，考虑明渠湍流床面附近猝发喷射和清扫运动对跃移层内运动颗粒的不同作用，分析了明渠中泥沙颗粒浓度垂线分布问题，得到了适用于包括跃移层、悬移层在内的统一浓度垂线分布公式。文中着重研究了跃移层内运动颗粒的浓度垂线分布，并将本文结果与实测跃移层内浓度垂线分布及实测跃移层顶部浓度进行了对比，结果表明理论与实验两者符合较好。     

HART协议物理层设备的测试(上)

本文介绍HART协议物理层设备的测试要求、测试设备、测试方法及测试时的一些特别说明。