变频调速节能技术在石油化工行业的应用

简要介绍了中国石化股份有限公司九江石化公司电机变频调速节能技术工业应用情况,并且列举了渣油进料泵、液氨输送泵和加热炉鼓风机的变频节能改造应用实例。实践证明,应用电机变频调速,不仪减少了电动机、机泵和阀门等设备的故障率,延长其使用寿命,而且节约电能效果显著,从而实现了电动机、风机、泵类设备的经济运行,提高了企业的经济效益和社会效益,推进了石油化工企业节能降牦、降本增效和可持续性发展。     

用Mathematica解热量传递过程中的数学问题

本文建议用数学软件Mathematica计算热量传递过程,包括用符号运算功能推导保温层临界直径,用曲线拟合法处理传热实验数据,用积分法求取传热系数为温度函数时的换热面积,用Solve等命令求解换热和保温过程所产生的非线性方程,用DSolve命令求解非稳态传热过程产生的微分方程等等。同时绘制出有关函数图形,准确、形象地展示计算过程和结果,方便教师讲解和学生理解,避免复杂、繁琐、耗时的手工计算,提高学生利用计算机解决热量传递问题的能力。     

Computational simulation of Belousov–Zhabotinskii oscillating chemical reaction

The suitability of computational simulation of the Belousov–Zhabotinskii oscillating chemical reaction by differential kinetic methodology for resolving nonlinear multi-component system is demonstrated in this work. According to the Field–KÖrÖs–Noyes mechanism and the Oregonator model, the change of the concentrations of HBrO₂, bromide ion and cerium ion are simulated. The results of computational simulation are consistent with experimental results very well. At the same time, the effect of variables and parameters, especially the rate constant on the oscillation curve, are investigated deeply. A simple method of estimating rate constants is obtained through simulation the concentrations of key components of the system, and then comparison the simulation results with the experimental ones. The reasonable rate constant is also proposed.     

Optical third-harmonic investigations of gallium nitride nucleation layers on sapphire

The magnitude of the χ _xxxx ⁽³⁾ element of the third-order optical susceptibility was measured in a series of wurtzite phase GaN nucleation layers (～450Å) deposited on (00.1) sapphire at 540°C and annealed to various temperatures up to 1050°C. The nonlinear optical response exhibited a significant increase in films that were annealed to temperatures in the range of 1015 to 1050°C. In addition, the correlation between the magnitude of χ _xxxx ⁽³⁾ with both the maximum value of the linear absorbance gradient and the residual homogeneous strain in the overlayer suggests that variations in the crystalline content of the film and the bonding distance between the Ga and N atoms are primary factors in determining the third-order nonlinearity in GaN.     

2D Bi2O2Te Semiconductor with Single-Crystal Native Oxide Layer

Following logic in the silicon semiconductor industry, the existence of native oxide and suitable fabrication technology is essential for 2D semiconductors in planar integronics, which are surface-sensitive to typical coating technologies. To date, very few types of integronics are found to possess this feature. Herein, the 2D Bi₂O₂Te developed recently is reported to possess large-area synthesis and controllable thermal oxidation behavior toward single-crystal native oxides. This shows that surface-adsorbed oxygen atoms are inclined to penetrate across [Bi₂O₂]_n²ⁿ⁺ layers and bond with the underlying [Te]_n²ⁿ⁻ at elevated temperatures, transforming directly into [TeO₄]_n²ⁿ⁻ with the basic architecture remaining stable. The oxide can be adjusted to form in an accurate layer-by-layer manner with a low-stress sharp interface. The native oxide Bi₂TeO₆ layer (bandgap of ≈2.9 eV) exhibits visible-light transparency and is compatible with wet-chemical selective etching technology. These advances demonstrate the potential of Bi₂O₂Te in planar-integrated functional nanoelectronics such as tunnel junction devices, field-effect transistors, and memristors.     

Imaging Solvent-Triggered Gaseous Iodine Uptake on Single Covalent Organic Frameworks

Covalent organic frameworks (COFs) are promising solid absorbents for the treatment of gaseous iodine. However, extensive efforts are still focused on empirical optimizations of specific binding sites and pore structures in COFs, and the chemical control of gaseous iodine uptake on COFs remains challenging. In this study, the chemically triggered sorption properties of COF-300 for I₂ vapors at the single-particle level with the dark-field microscope (DFM) are explored. The present operando single-particle DFM imaging method enables the direct visualization of an adsorption activity transformation from inactive COF-300 to active solvated COF-300 toward gaseous I₂ vapors. Exploiting the useful reaction information from time-lapsed DFM images, the tunable adsorption performance of solvated COF-300 is quantitatively compared by various solvents. The results illustrate that the isopropanol (IPA)-solvated COF-300 achieves the optimum adsorption capacity for I₂ among the absorbents. The reaction mechanism is elucidated to be the channel size enlargement and modification of internal surface chemistry in the IPA-solvated COF-300, producing a stable I₂/IPA-solvated COF-300 complex after the sorption reaction. The present chemical control of the sorption behavior of COF-300 revealed by DFM opens up a new fundamental paradigm for rationally developing high-performance COF-based absorbents for removing I₂ vapors.     

Lateral WSe2 Homojunction through Metal Contact Doping: Excellent Self-powered Photovoltaic Photodetector

Here an IR-heating chemical vapor deposition (CVD) approach enabling fast 2D-growth of WSe₂ thin films is reported, and the great potential of metal contact doping in building CVD-grown WSe₂-based lateral homojunction is demonstrated by contacting with TiN/Ni metals in favor of holes/electrons injection. Shortening nanosheet channel to ≈2 µm leads to pronounced enhancement in the performance of diode. The fabricated WSe₂-based diode exhibits high rectification ratios without the need of gate modulation and can work efficiently as photovoltaic cell, with maximum open circuit voltage reaching up to 620 mV and a high power conversion efficiency over 15%, empowering it as superb self-powered photodetector for visible to near-infrared lights, with photoresponsivity over 0.5 A W⁻¹ and a fast photoresponse speed of 10 µs under 520 nm illumination. It is of practical significance to achieve well-performed photovoltaic devices with CVD-grown WSe₂ using fab-friendly metals and simple processing, which will help pave the way toward future mass production of optoelectronic chips.     

Optical properties of carbon-containing titanium oxide nanocomposites obtained by the pulsed plasma chemical method

This paper presents the results of an experimental investigation on the optical properties of the TiO₂ and Ti_xC_yO_z nanopowders, produced by the pulsed plasma chemical method. Pulsed plasma chemical synthesis is realized on the laboratory stand, including a plasma chemical reactor (6 l) and TEA-500 electron accelerator. The parameters of the electron beam are as follows: 400–450 keV electron energy, 60 ns half-amplitude pulse duration, up to 200 J pulse energy, and 5 cm beam diameter. In TiO₂ sample, obtained using the pulsed plasma chemical method, the particles can be divided into two groups: 100–500 nm large spherical particles and tiny complex particles (sized less than 100 nm). For TixCyOz sample, the morphology of the particles is mainly presented with irregular fragment shape. The average size of the particles is ranged from 200 to 300 nm. The band gap for all synthesized samples is within 2.94–3.35 eV.     

A Novel and Facile Route to Synthesize Atomic‐Layered MoS2 Film for Large‐Area Electronics

High‐quality and large‐area molybdenum disulfide (MoS₂) thin film is highly desirable for applications in large‐area electronics. However, there remains a challenge in attaining MoS₂ film of reasonable crystallinity due to the absence of appropriate choice and control of precursors, as well as choice of suitable growth substrates. Herein, a novel and facile route is reported for synthesizing few‐layered MoS₂ film with new precursors via chemical vapor deposition. Prior to growth, an aqueous solution of sodium molybdate as the molybdenum precursor is spun onto the growth substrate and dimethyl disulfide as the liquid sulfur precursor is supplied with a bubbling system during growth. To supplement the limiting effect of Mo (sodium molybdate), a supplementary Mo is supplied by dissolving molybdenum hexacarbonyl (Mo(CO)₆) in the liquid sulfur precursor delivered by the bubbler. By precisely controlling the amounts of precursors and hydrogen flow, full coverage of MoS₂ film is readily achievable in 20 min. Large‐area MoS₂ field effect transistors (FETs) fabricated with a conventional photolithography have a carrier mobility as high as 18.9 cm² V^?1 s^?1, which is the highest reported for bottom‐gated MoS₂‐FETs fabricated via photolithography with an on/off ratio of ≈10⁵ at room temperature.     

Sandwiched Thin‐Film Anode of Chemically Bonded Black Phosphorus/Graphene Hybrid for Lithium‐Ion Battery

A facile vacuum filtration method is applied for the first time to construct sandwich‐structure anode. Two layers of graphene stacks sandwich a composite of black phosphorus (BP), which not only protect BP from quickly degenerating but also serve as current collector instead of copper foil. The BP composite, reduced graphene oxide coated on BP via chemical bonding, is simply synthesized by solvothermal reaction at 140 °C. The sandwiched film anode used for lithium‐ion battery exhibits reversible capacities of 1401 mAh g^?1 during the 200th cycle at current density of 100 mA g^?1 indicating superior cycle performance. Besides, this facile vacuum filtration method may also be available for other anode material with well dispersion in N‐methyl pyrrolidone (NMP).