轧辊修磨表面质量缺陷分析及对策

介绍六辊轧机工作辊、中间辊修磨缺陷的规律特征,通过实际工艺分析以及经验的积累判断表面质量问题产生的原因,并提出解决表面质量问题和检测方法的可行性方案。     

半导体中子嬗变掺杂中的诱生缺陷

讨论了半导体材料中子嬗变掺杂（ Ｎ Ｔ Ｄ） 诱生缺陷的三种原因,即快中子辐射损伤、原子蜕变β辐射及γ辐射反冲造成的位移损伤。简述了由它们引起的缺陷的特性、常用的鉴别手段及相应的退火方法     

红外热像技术诊断乙烯裂解炉热故障

通过对乙烯裂解炉热故障的红诊断出裂解炉衬里损伤部位及程度,炉出口横向温度分布情况,物料管线保温状况及炉管结焦程度,从而为裂解炉的安全稳定优化运行和设备维修提供依据。     

快速预热处理对大直径CZ-Si中FPDs及清洁区的影响

研究了不同气氛下快速预热处理(RTA)后,硅片中的流动图形缺陷(FPDs)密度和随后两步热处理形成的魔幻清洁区(MDZ)之间的关系.硅片经过高温快速预热处理后,再经过800℃(4h)+1000℃(16h)常规退火,以形成MDZ.研究发现,当硅片在Ar气氛或N2/O2(9%)混合气氛下RTA预处理后,FPDs密度较低,随后热处理出现的氧沉淀诱生缺陷密度较高、清洁区较宽.对于N2/O2混和气氛,随着O2含量的增加,FPDs和氧沉淀诱生缺陷密度变小,纯O2气氛下预处理后硅片中FPDs和氧沉淀诱生缺陷密度最低.因此,可以通过调节N2/O2混合气氛中两种气氛的比例来控制空洞型微缺陷和硅片体内氧沉淀诱生缺陷的密度.     

光学元件表面疵病标准板系统设计

为解决大口径光学元件表面疵病检测设备的精确测量、校准和溯源问题。设计了用于标定表面疵病检测系统的标准板,通过电子束曝光将定标图案转移至掩模板,再采用反应离子束刻蚀的方法制作标准板。通过扫描电镜测量标准板上各标准线的真实线宽尺寸,并以扫描电镜测量结果为参考值标定大口径表面疵病检测系统。利用所设计的标准板标定基于散射成像法的大口径表面疵病检测系统。结果表明,当疵病线宽尺寸大于45 μm时,疵病的散射像满足几何成像原理,当疵病宽度尺寸小于45 μm时,需按标定结果进行计算。     

Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes

Over 350 4H-SiC Schottky barrier diodes (SBDs) of varying size are characterized using current–voltage (I–V) measurements, with some also measured as a function of temperature. Devices display either a characteristic single-barrier height or atypical dual-barrier heights. Device yields are shown to decrease as device area increases. Molten KOH etching is used to highlight defects for analysis by optical microscopy and atomic force microscopy. The I–V characteristics are compared against the defect density. A positive correlation between effective barrier height and effective electrically active area of the SBDs is found. No correlation is found between threading dislocations and ideality factor or barrier height.     

Progress in the Molecular Beam Epitaxy of HgCdTe on Large-Area Si and CdZnTe Substrates

This paper presents the progress in the molecular beam epitaxy (MBE) growth of HgCdTe on large-area Si and CdZnTe substrates at Raytheon Vision Systems. We report a very high-quality HgCdTe growth, for the first time, on an 8 cm × 8 cm CdZnTe substrate. This paper also describes the excellent HgCdTe growth repeatability on multiple 7 cm × 7 cm CdZnTe substrates. In order to study the percentage wafer area yield and its consistency from run to run, small lots of dual-band long-wave infrared/long-wave infrared triple-layer heterojunction (TLHJ) layers on 5 cm × 5 cm CdZnTe substrates and single-color double-layer heterojunction (DLHJ) layers on 6-inch Si substrates were grown and tested for cutoff wavelength uniformity and micro- and macrovoid defect density and uniformity. The results show that the entire lot of 12 DLHJ-HgCdTe layers on 6-inch Si wafers meet the testing criterion of cutoff wavelength within the range 4.76 ± 0.1 μm at 130 K and micro- and macrovoid defect density of ≤50 cm⁻² and 5 cm⁻², respectively. Likewise, five out of six dual-band TLHJ-HgCdTe layers on 5 cm × 5 cm CdZnTe substrates meet the testing criterion of cutoff wavelength within the range 6.3 ± 0.1 μm at 300 K and micro- and macrovoid defect density of ≤2000 cm⁻² and 500 cm⁻², respectively, on the entire wafer area. Overall we have found that scaling our HgCdTe MBE process to a 10-inch MBE system has provided significant benefits in terms of both wafer uniformity and quality.     

锑化铟晶片高温加速贮存性能变化研究

锑化铟晶片在存放以及使用过程中的性能稳定性是影响制备的探测器性能的重要因素之一。为了探究锑化铟晶片在长时间放置情况下的性能变化情况,对锑化铟晶片进行高温加速贮存试验,并在试验过程中对晶片几何参数、表面粗糙度、电学参数、位错缺陷等几个重要性能参数进行跟踪检测。结果表明,在高温加速试验条件下,除晶片外形发生轻微变化以外,其他性能基本不发生变化,晶片能够长期保存。     

Probing Defects and Spin-Phonon Coupling in CrSBr via Resonant Raman Scattering

Understanding the stability limitations and defect formation mechanisms in 2D magnets is essential for their utilization in spintronic and memory technologies. Here, defects in mono- to multilayer CrSBr are correlated with structural, vibrational, and magnetic properties. Resonant Raman scattering is used to reveal distinct vibrational defect signatures. In pristine CrSBr, it is shown that bromine atoms mediate vibrational interlayer coupling, allowing for distinguishing between surface and bulk defect modes. Environmental exposure is shown to cause drastic degradation in monolayers, with the formation of intralayer defects. This is in contrast to multilayers that predominantly show bromine surface defects. Through deliberate ion irradiation, the formation of defect modes is tuned: these are strongly polarized and resonantly enhanced, reflecting the quasi--1D electronic character of CrSBr. Strikingly, pronounced signatures of spin-phonon coupling of the intrinsic phonon modes and the ion beam-induced defect modes are observed throughout the magnetic transition temperature. Overall, defect engineering of magnetic properties is possible, with resonant Raman spectroscopy serving as a direct fingerprint of magnetic phases and defects in CrSBr.     

A Fullerene Seeded Strategy for Facile Construction of Nitrogen-Doped Carbon Nano-Onions as Robust Electrocatalysts

Carbon nano-onions (CNOs) as a novel form of carbon materials hold peculiar structural features but their electrocatalytic applications are largely discouraged by the demanding synthesis conditions (e.g., ≥1500 °C and vacuum). Using C₆₀ fullerene molecules as the sacrificial seeds and melamine as the main feedstock, herein, a novel strategy for the facile construction of CNOs nanoparticles is presented with ultrafine sizes (≈5 nm) at relatively low temperatures (≤900 °C) and atmospheric pressure. During the calcination, in-depth characterizations reveal that C₆₀ can retain the melamine-derived graphitic carbon nitride from complete sublimation at high temperatures (≥700 °C). Owing to the N removal and subsequent pentagon generation, severely deformed graphitic fragments together with the disintegrated C₆₀ molecules merge into larger sized nanosheets with high curvature, eventually leading to the formation of N-doped defect-rich CNOs. Owing to the integration of multiple favorable structural features of pentagons, edges, and N dopants, the CNOs obtained at 900 °C present superior oxygen reduction half-wave potential (0.853 V_RHE) and zinc–air cathode performance to the commercial Pt/C (0.838 V_RHE). Density functional theory calculation further uncovers that the carbon atoms adjacent to the N-doped edged pentagons are turned into the ORR-active sites with O₂ protonation as the rate-determining step.