Fabrication of low defect density 3C-SiC on SiO2 structures using wafer bonding techniques

This paper reports on a process to fabricate single-crystal 3C-SiC on SiO₂ structures using a wafer bonding technique. The process uses the bonding of two polished polysilicon surfaces as a means to transfer a heteroepitaxial 3C-SiC film grown on a Si wafer to a thermally oxidized Si wafer. Transfer yields of up to 80% for 4 inch diameter 3C-SiC films have been achieved. Homoepitaxial 3C-SiC films grown on the 3C-SiC on SiO₂ structures have a much lower defect density than conventional 3C-SiC on Si films.     

厚膜混合集成电路常见工艺缺陷及其消除方法

除设计和材料外，工艺和操作对厚膜混合集成电路的质量和性能也有较大的影响。分析了厚膜混合集成电路生产过程中一些常见的工艺缺陷，如线条变形、起泡、阻值不稳、元件受损、锡珠等的产生原因，并提出了相应的消除方法。     

Crystal structure of poly(tetrafluoroethylene) homo- and copolymers in the high pressure phase

X-ray diffraction measurements are reported for 27°C, pressures to 5.2 GPa and concentrations of CF₃ units to 0.049 CF₃/CF₂. These show both orthorhombic and monoclinic structures to exist under high hydrostatic pressure. It is proposed that shear stresses generated at elastic inhomogeneities in the sample lead to the monoclinic phase. Energy calculations are consistent with this concept. They also indicate that conformational and rotational disorders raise the entropy of the high pressure phase III. Perfluoromethyl branches increase the volume/CF₂ of phase III more than that of the low pressure phase I. At high CF₃ concentrations and pressures, both phases become metrically hexagonal. The volume of transition becomes zero at a concentration near 0.05 CF₃/CF₂ and no transition is observed to a pressure of 5.2 GPa. There appears to be a critical point near 27°C, a CF₃ concentration of 0.05 and a pressure of 3.5 to 5 GPa.     

Nonequiiibrium Surface Segregation in Aluminum-Doped TiO2 under an Oxidizing Potential: Effects on Redox Color-Boundary Migration

During the oxidation of redued single crystals of Al-doped rutile, unusual anisotropies in color-boundary migration have been observed that are opposite to those predicted from published diffusion data. Analysis of the redox kinetics and of surface segregation (using ESCA and AES) shows that rapid transport of minority Al interstitials in the c -axis direction occurs under an oxidation potential, resulting in a surface segregation layer inhibiting further reoxidation. This surface segregation is nonequilibrium in nature, is driven by oxidation, and bears similarities to the phenomena of kinetic demixing in ionic systems. The results show that minority defects can play critical roles in demixing at the local scale; in their absence this system would not be expected to demix. This thus appears to be an additional mechanism for nonequilibrium interfacial segregation in ionic systems.     

Probing into Reverse Bias Dark Current in Perovskite Photodiodes: Critical Role of Surface Defects

Minimizing reverse bias dark current density (J_dark) while retaining high external quantum efficiency is crucial for promising applications of perovskite photodiodes, and it remains challenging to elucidate the ultimate origin of J_dark. It is demonstrated in this study that the surface defects induced by iodine vacancies are the main cause of J_dark in perovskite photodiodes. In a targeted way, the surface defects are thoroughly passivated through a simple treatment with butylamine hydroiodide to form ultrathin 2D perovskite on its 3D bulk. In the passivated perovskite photodiodes, J_dark as low as 3.78 × 10^-10 A cm^-2 at -0.1 V is achieved, and the photoresponse is also enhanced, especially at low light intensities. A combination of the two improvements realizes high specific detectivity up to 1.46 × 10¹² Jones in the devices. It is clarified that the trap states induced by the surface defects can not only raise the generation-recombination current density associated with the Shockley–Read–Hall mechanisms in the dark (increasing J_dark), but also provide additional carrier recombination paths under light illumination (decreasing photocurrent). The critical role of surface defects on J_dark of perovskite photodiodes suggests that making trap-free perovskite thin films, for example, by fine preparation and/or surface engineering, is a top priority for high-performance perovskite photodiodes.     

Revealing and Eliminating the Light-Soaking Issue in Metal Oxide-Based Inverted Organic Solar Cells

Inverted organic solar cells (i-OSCs) provide an exciting opportunity for commercialization owing to their excellent device air stability. However, light soaking (LS) issue generally occurs in metal oxide based i-OSCs, causing drastically decreased performance. The underlying root of LS effect is not clearly clarified until now. Herein, it is demonstrated that the surface oxygen defects on metal oxide nanoparticles, such as chemisorbed superoxide (O²⁻) and hydroxide (OH) dangling bonds, are the main reasons for LS issue in i-OSCs. The O²⁻ layer induces band bending at the cathode interface and increases the work function (WF) of metal oxide, thus leading to inefficient charge transport. The dangling bonds serve as interfacial trap states and cause non-radiative recombination, thus leading to the reduced open circuit voltage (V_oc). With ultraviolet (UV) illumination, the surface oxygen defects are interacted with photogenerated carriers, thereby improving the photovoltaic performance. Additionally, UV pretreatment of metal oxide films is employed to eliminate the LS issue and the resulting device yields significantly improved fill factors from 50.20% to 73.50% in the pristine SnO₂ based i-OSCs. This study reveals the origin of LS effect in i-OSCs and proposes a suggested model for LS mechanism.     

Characterization of germanium implanted Si1−xGex layer

Characterization of a Si_1−xGe_x layer formed by high-dose germanium implantation and subsequent solid phase epitaxy is reported. Properties of this layer are obtained from electrical measurements on diodes and transistors fabricated in this layer. Results are compared with those of the silicon control devices. It was observed that the germanium implantation created considerable defects that are difficult to eliminate with annealing. These defects result in boron deactivation in the p-type regions of the devices, giving rise to larger resistance. Optimization of the device structure and fabrication process is discussed.     

光电耦合器件g-r噪声模型

在宽范围偏置条件下，测量了光电耦合器件的g-r（产生-复合）噪声．实验结果表明，随着偏置电流的增加，g-r噪声逐渐向高频移动，其噪声幅值呈现先增加后减小的变化规律．通过测量前级噪声和后级噪声，发现光电耦合器件g-r噪声来源于后级的光敏三极管．基于载流子数涨落机制，建立了一个光电耦合器件g-r噪声的定量分析模型．实验结果和本文模型符合良好．     

Structural and optical properties of AIN sputtering deposited on sapphire substrates with various orientations

AIN thin films were deposited on c-,a-and r-plane sapphire substrates by the magnetron sputtering technique.The in-fluence of high-temperature thermal annealing (HTTA) on the structural,optical properties as well as surface stoichiometry were comprehensively investigated.The significant narrowing of the (0002) diffraction peak to as low as 68 arcsec of AIN after HTTA implies a reduction of tilt component inside the AIN thin films,and consequently much-reduced dislocation densities.This is also supported by the appearance of E2(high) Raman peak and better Al-N stoichiometry after HTTA.Furthermore,the in-creased absorption edge after HTTA suggests a reduction of point defects acting as the absorption centers.It is concluded that HTTA is a universal post-treatment technique in improving the crystalline quality of sputtered AIN regardless of sapphire orienta-tion.     

Irradiation of Transition Metal Dichalcogenides Using a Focused Ion Beam: Controlled Single‐Atom Defect Creation

Manipulation and structural modifications of 2D materials for nanoelectronic and nanofluidic applications remain obstacles to their industrial‐scale implementation. Here, it is demonstrated that a 30 kV focused ion beam can be utilized to engineer defects and tailor the atomic, optoelectronic, and structural properties of monolayer transition metal dichalcogenides (TMDs). Aberration‐corrected scanning transmission electron microscopy is used to reveal the presence of defects with sizes from the single atom to 50 nm in molybdenum (MoS₂) and tungsten disulfide (WS₂) caused by irradiation doses from 10¹³ to 10¹⁶ ions cm^?2. Irradiated regions across millimeter‐length scales of multiple devices are sampled and analyzed at the atomic scale in order to obtain a quantitative picture of defect sizes and densities. Precise dose value calculations are also presented, which accurately capture the spatial distribution of defects in irradiated 2D materials. Changes in phononic and optoelectronic material properties are probed via Raman and photoluminescence spectroscopy. The dependence of defect properties on sample parameters such as underlying substrate and TMD material is also investigated. The results shown here lend the way to the fabrication and processing of TMD nanodevices.