Amorphous Ta-nanocrystalline RuOx diffusion barrier for lower electrode of high density memory devices

The effects of the amount of RuO₂ added in the Ta film on the electrical properties of a Ta-RuO₂ diffusion barrier were investigated using n⁺⁺-poly-Si substrate at a temperature range of 650–800°C. For the Ta layer prepared without RuO₂ addition, Ta₂O₅ phase formed after annealing at 650°C by reaction between Ta and external oxygen, leading to a higher total resistance and a non-linear I-V curve. Meanwhile, in the case of the Ta film being deposited with RuO₂ incorporation, not only a lower total resistance and ohmic characteristics exhibited, but also the bottom electrode structure was retained up to 800°C, attributing to the formation of a conductive RuO₂ crystalline phase in the barrier film by reaction with the indiffused oxygen because of a Ta amorphous structure formed by chemially strong Ta-O or Ta-Ru-O bonds and a large amount of conductive RuO₂ added. Since a kinetic barrier for nucleation in formation of the crystalline Ta₂O₅ phase from an amorphous Ta(O) phase is much higher than that of crystalline RuO₂ phase from nanocrystalline RuO_x phase, the formation of the RuO₂ phase by reaction between the indiffused oxygen and the RuO_x nanocrystallites is kinetically more favorable than that of Ta₂O₅ phase.     

差分投影快速定向图像插值算法的优化

针对图像放大时分辨率会降低,图像的感知质量变差等问题,并考虑到计算的复杂度,提出了一种差分投影快速定向图像插值算法。该方法通过对低分辨率图像的梯度扩散确定高分辨图像的丢失像素,由特殊的去噪方法对该算法进行优化,并与最近邻插值法与双线性插值算法等相比较。实验结果表明,该方法具有较高的分辨率和较低的计算复杂度,优于其他方法。     

Thermal Interaction in Semiconductor Laser Arrays

A novel theoretical model of thermal diffusion has been established to study thermal interaction between two neighboring diodes in semiconductor laser arrays. The main cause of the ocurrence of the thermal interaction between two neighboring diodes in array devices is the heat conduction through heat sink. We hold that as the devices must have heat sink to diffuse heat, this kind of interaction in the array would always exist. However, when the pitch between two neighboring diodes in the array is reasonably defined, this troublesome thermal interaction can be simply reduced by using our model. Based on the individual diodes with leaky waveguide structure, we experimentally succeeded in fabricating 2D 4 ×4 arrays. The thermal interaction between upper and lower diodes in the 2D array is also considered as well as the function of the heat sink. The measured results show that the pulse peak output powor of the 2D 4 ×4 array is high up to 11 W.     

基于色调处理技术的图像认证算法

基于色调处理技术,该文给出了一种有效可行且具有自修复能力的图像认证算法。首先,基于误差扩散色调处理技术将水印图像4bit色调量化,井依据混沌置乱算子,将色调结果置乱,然后构造平均误差最小的特征集合C,最后依据误差扩散数据隐藏算法将置乱后水印图像隐藏于原始图像中;在认证端,从接收到的图像提取其中所隐藏水印信息并进行逆置乱,比较接收到的图像和反置乱后的隐藏信息,判断内容发生变化的位置,并依据所提取的水印信息修复被篡改图像。实验结果表明,该算法对删除、替换、篡改等破坏图像内容的恶意操作有精确的检测和定位,以及自修复能力。     

三重扩散IGBT的参数优化

采用三重扩散工艺制作ＩＧＢＴ是一种比较经济的方法。利用解析方法和二维模拟方法,优化了耐压为６００Ｖ三重扩散ＩＧＢＴ的部分参数,为实际利用三重扩散工艺制作耐压６００Ｖ的ＩＧＢＴ提供了参数依据。     

High-Integrated-Photosensitivity Negative-Electron-Affinity GaAs Photocathodes with Multilayer Be-Doping Structures

The effect of changing Be doping concentration in GaAs layer on the integrated photosensitivity for negative-electron-affinity GaAs photocathodes is investigated.Two GaAs samples with the monolayer structure and the multilayer structure are grown by molecular beam epitaxy.The former has a constant Be concentration of 1e19cm-3,while the latter includes four layers with Be doping concentrations of 1e19,7e18,4e18,and 1e18cm-3 from the bottom to the surface.Negative-electron-affinity GaAs photocathodes are fabricated by exciting the sample surfaces with alternating input of Cs and O in the high vacuum system.The spectral response results measured by the on-line spectral response measurement system show that the integrated photosensitivity of the photocathode with the multilayer structure enhanced by at least 50% as compared to that of the monolayer structure.This attributes to the improvement in the crystal quality and the increase in the surface escape probability.Different stress situations are observed on GaAs samples with monolayer structure and multilayer structure,respectively.     

Robin边界条件下光学CT正向问题的数值模拟

文章研究了Robin边界条件下光学层析成像的正向算法,进行了理论分析,给出了实 验结果,实验结果符合理论分析的结果。并对将Robin边界条件和Dirichlet边界条件下的结果进行比较、分析,得出两者的异同点。     

Predicting the scale of information diffusion in social network services

Predicting the scale of information diffusion is an important task for many social network services (SNS) operators and enterprises. In this paper, the authors investigate the effects of two types of indicators, user attributes and social network attributes, and study on the accuracy of predicting the scale of information diffusion, and how to select an appropriate model that can fit real data better and have a higher accuracy. The experimental results show that both user attributes and social network structure attributes have significant effects on the scale of information diffusion. At the same time, three data mining models are constructed in this paper to predict the scale of information diffusion and compare their prediction accuracy. It is found that neural network model performs much better than decision tree and linear regression do.     

Impact of barrier deposition process on electrical and reliability performance of Cu/CVD low k SiOCH metallization

Integration of Cu with low k dielectrics provided solution to reduce both resistance-capacitance time delay and parasitic capacitance of BEOL interconnections for 130 nm and beyond technology node. The motivation of this work is to study and improve electrical and reliability performance of two-level Cu/CVD low k SiOCH metallization from the results of diffusion barrier deposition schemes. Barrier deposition schemes are (a) high-density-plasma 250 Å Ta; (b) surface treatment of forming gas followed by high-density-plasma 250 Å Ta and (c) bi-layer of 100 Å Ta(N)/150 Å Ta. In this work, we demonstrated the superior and competency of high-density-plasma Ta deposition for Cu/CVD low k metallization and achieved excellent electrical and reliability results. Wafers fabricated with high-density-plasma Ta barrier scheme resulted in the best electrical yields, >90% for testing vehicles of dense via chains (via size=200 nm) and interspersed comb structures (width/space=200 nm/200 nm). Dielectric breakdown strength of the interspersed comb structures obtained at electric field of 0.3 MV/cm was ∼4 MV/cm.     

A variable step‐size diffusion affine projection algorithm

This paper presents a new variable step‐size diffusion affine projection algorithm (VSS‐DAPA) to advance the filter performance of the diffusion affine projection algorithm (DAPA). The proposed VSS strategy is developed for the DAPA, which can solve the distributed estimation problem over diffusion networks well. To obtain the optimal step size reasonably, we seek the update recursion of mean‐square deviation (MSD) that is suitable for the DAPA. The step size is optimally given through the minimization for the MSD of the DAPA at each iteration. The derived step size through the MSD minimization improves the filter performance with respect to the convergence and the estimation error in steady state. The results based on simulations demonstrate that the proposed VSS‐DAPA performs better than the existing algorithms with a system‐identification scenario in diffusion network. Copyright © 2015 John Wiley & Sons, Ltd.