化学发光免疫分析仪测量系统的改进

化学发光免疫分析仪采用单光子计数技术实现了免疫反应微弱荧光的测量系统。针对测量系统存在光子脉冲堆积效应的问题,设计了多光子脉冲的甄别电路和计数电路,对光子脉冲堆积效应进行了补偿,改进了测量系统的性能。实验表明,该设计的补偿方法使光子数的测量效率提高了6.67％,补偿的相对偏差值为1.3％,有效地提高化学发光免疫分析仪测量系统的测量精度。     

Effects of a-Si:H resist vacuum-lithography processing on HgCdTe

A vacuum-compatible process for carrying out lithography on Hg_1−xCd_xTe and CdTe films was previously demonstrated. It was shown that hydrogenated amorphous silicon (a-Si:H) could be used as a dry resist by projecting a pattern onto its surface using excimer laser irradiation and then developing that pattern by hydrogen plasma etching. Pattern transfer to an underlying Hg_1−xCd_xTe film was then carried out via Ar/H₂ plasma etching in an electron cyclotron resonance (ECR) reactor. Despite the successful demonstration of pattern transfer, the possibility of inducing harmful effects in the Hg_1−xCd_xTe film due to this vacuum lithography procedure had not been explored. Here we present structural and surface compositional analyses of Hg_1−xCd_xTe films at key stages of the a-Si:H vacuum lithography procedure. X-ray diffraction double crystal rocking curves taken before and after a-Si:H deposition and after development etching were identical, indicating that bulk structural changes in the Hg_1−xCd_xTe film are not induced by these processes. Cross-section transmission electron microscopy studies show that laser-induced heating in the 350 nm thick a-Si:H overlayer is not sufficient to cause structural damage in the underlying Hg_1−xCd_xTe surface. In vacuo surface analysis via Auger electron spectroscopy and ion scattering spectroscopy suggest that the hydrogen plasma development process produces Hg-deficient surfaces but does not introduce C contamination. However, after ECR plasma etching into the Hg_1−xCd_xTe film, the measured x value is much closer to that of the bulk.     

基于低频电噪声的光电耦合器可靠性筛选方法研究

低频电噪声是表征电子器件质量和可靠性的敏感参数,通过测试低频噪声,可以快速、无损地实现光耦器件的可靠性评估。通过开展可靠性老化对光电耦合器低频噪声特性影响的试验研究,提出基于低频段宽频带噪声参数的光电耦合器可靠性筛选方法,并将可靠性筛选结果与点频噪声筛选方法结果进行对比分析。结果表明,与点频噪声参数等现有方法相比,宽频带噪声参数可以更灵敏和准确地表征器件可靠性,同时计算简便,基于宽频带噪声参数的光电耦合器可靠性筛选方法可以实现更为准确合理的可靠性分类筛选。     

显影关键点及其对精细线路制作的影响

文章结合过显侵蚀干膜的原理,试验设计不同的显影条件,分析干膜线路和蚀刻线路的情况,确定显影关键点及其对精细线路制作的影响。     

Cl2/BCl3感应耦合等离子体GaN刻蚀侧壁形貌研究

基于感应耦合等离子体干法刻蚀技术,对采用Cl2/BCl3气体组分下GaN刻蚀后的侧壁形貌进行了研究。扫描电镜(SEM)结果表明,一定刻蚀条件下,刻蚀后GaN侧壁会形成转角与条纹状褶皱形貌。进一步实验,观察到了GaN侧壁转角形貌的形成过程;低偏压功率实验表明,高能离子轰击是GaN侧壁转角与条纹状褶皱形貌形成的原因。刻蚀过程中,掩蔽层光刻胶经过高能离子一段时间轰击后,其边缘首先出现条纹状褶皱形貌,并转移到GaN侧壁上,接着转角形貌亦随之出现并转移到GaN侧壁上。这与已公开发表文献认为的GaN侧壁条纹状褶皱仅由于掩蔽层边缘粗糙所引起而非刻蚀过程中形成的解释不同。     

Improvedn-type GaAs ohmic contacts compatible with a chlorine-based dry-etch process

We report the use of a Mo barrier layer within Ni/Au-Ge based ohmic contacts to GaAs for eliminating an etch stop reaction that occurs during Cl-based dry etching of heterojunction bipolar transistors. With conventional Ni/Au-Ge/Ag ohmic contacts, chlorinecontaining discharges produce a passivating layer of AgCl on the semiconductor surface, preventing further etching. This layer is absent when the Ag in the contact is replaced with Mo. The Mo has several advantages over other diffusion barrier layers and yields contacts with excellent adhesion, smooth morphology, and sharp edge definition. The average contact resistivity of these contacts ton ⁺-GaAs(n = 6 × 10¹⁸ cm^-3) was 0.074 ohm-mm, which is lower than the typical contact resistivity of conventional Ni/Au-Ge/ Ag metallization (0.11 ohm-mm).     

聚酯切片软化初峰温度与干燥时间和温度的关系

通过测试在不同干燥温度和时间下聚酯切片软化初峰温度的变化,初步探讨了半消光切片软化初峰温度与干燥时间和干燥温度的关系,同时为干燥装置提供了适宜的操作条件。     

铜蒸气激光器的改进及稳定

通过改变放电管中铜粒的位置、放电管外层保温材料的性质和厚度以及对放电产生的电磁辐射进行屏蔽等措施,进一步提高了25W铜蒸气激光器的可靠性和稳定性。     

塑封半导体器件的可靠性保证措施

为了降低塑封半导体器应用于高可靠性产品领域中的质量风险,采用质量细化分析方法,针对塑封半导体器件本身在材料、结构等方面的特点,做了塑封半导体器件失效模式与机理的原理探讨。得出器件应用于产品前,应该进行温度适应性评估、二次筛选以及破坏性物理分析等先期工作。     

厚膜集成电路丝网印刷工艺技术

重点介绍了厚膜集成电路的丝网印刷工艺技术和影响印刷质量的因素 ,并以厚膜电阻器为例 ,简述其制作工艺过程 ,以及丝网印刷缺陷对厚膜电路的影响