低辐射薄膜的研究进展

低辐射薄膜(Low-E Film)发展了20多年,它的高可见光透射率和高红外紫外光的反射率被应用在很多领域.低辐射薄膜一般由在线法和离线法制备,所得结构不同,性能也有较多差异.时低辐射薄膜的制备方法、性能,以及最新研究进展和应用进行了综述,并对2种类型的低辐射薄膜进行了比较.     

离子束溅射淀积光学薄膜的膜厚均匀性实验

介绍了离子束溅射技术改善薄膜均匀性的两种方法。研究了修正板技术,根据工程需要将修正板技术应用于行星转动条件下的光学薄膜的均匀性修正。分别研究了靶摆动和不摆动的情况下,淀积薄膜的均匀性修正。实验结果表明,修正后的均匀性结果优于 1%,能满足实际应用的要求;靶摆动修正的均匀性结果优于修正板技术。     

Correlations between the Optical Properties and the Microstructure of TiO_2 Thin Films Prepared by Reactive Electron-beam Evaporation

1　IntroductionInrecentyears ,theoreticalandexperimentalinvesti gationsonthetitaniumoxidefilmsareconductedonac countoftheirremarkableproperties .Titaniumdioxidefilmshaveattractedconsiderableattentiontoapplytomi croelectronicdevices ,opticalthin filmdevice…     

Structural and electrochemical properties of vanadium oxide thin films grown by d.c. and r.f. reactive sputtering at room temperature

Vanadium oxide thin films were grown at room temperature by direct current and radio-frequency reactive sputtering systems to compare the structural and electrochemical properties. Rutherford backscattering spectrometry and Fourier transform infrared measurements reveal that the composition of the as-deposited films consists of the V₂O₅ phase regardless of the deposition methods. Wide-angle X-ray diffraction measurements show that the crystallinity of the as-deposited V₂O₅ films is different depending on the deposition method. Films deposited by direct current reactive sputtering were amorphous, whereas films deposited by radio-frequency reactive sputtering were crystalline. Scanning electron microscopy measurements show that the V₂O₅ films grown by radio-frequency reactive sputtering had a large grain size but the films grown by direct current reactive sputtering were amorphous. Charge–discharge measurements taken at room temperature with a constant current clearly indicate that the films grown by direct current sputtering demonstrated typical amorphous behavior, whereas the V₂O₅ films grown by radio-frequency sputtering demonstrated the discharge behavior of crystalline V₂O₅. The origin of the structural and electrochemical properties of film grown by radio-frequency reactive sputtering is a self-bias effect. The self-bias effect induces ion bombardment during the growth of vanadium oxide thin film. These results suggest that direct current reactive sputtering is more desirable for growing amorphous V₂O₅ thin film than radio-frequency reactive sputtering.     

Observation of very thin gold island films vacuum-deposited onto MoS2 surface by STM

A gold film of about half a monolayer in thickness was vacuum-deposited onto air-cleaved MoS₂ surface at room temperature at a pressure of 10^?5 Pa. Quasi-two-dimensionally grown gold islands made of several atomic layers were observed by scanning an area of 40×30 nm². The shape of them was oblate and about 20 nm in diameter. Atomic corrugations which reflect the Au(111) surface were observed. The islands were found to move and changed their shape during the microscopy.     

波型板分离器竖直板壁水膜流动研究

波型板分离器板壁的水膜流动特性影响分离器内二次水滴的生成．采用数值方法对波型板分离器板壁水膜流动特性进行研究,通过分析波型板板壁水膜流动的特点,并对流动水膜进行合理的假设和简化,建立了波型板板壁水膜流动的物理模型和数学模型。采用有限容积法．对流项采用二阶迎风格式,扩散项采用中心差分格式,对控制方程进行离散,采用ADI（Alternating—Direction Implicit）方法对离散方程进行求解数值研究得出在主流汽体横掠波型板汽水分离器竖直板壁情况下,板壁水膜厚度、平均速度等参数与汽流流动速度和沉降率之间的关系。     

激光加载下准等熵压缩实验用铝/氟化锂复合双台阶靶的研制

本文提出了一种激光加载下准等熵压缩实验用铝/氟化锂复合双台阶靶的加工技术。采用金刚石车削在1.5 mm厚的氟化锂晶体表面加工两个10 μm高度的台阶,然后利用电子束蒸发在氟化锂台阶面镀厚度为几十μm的高致密纯铝膜,再通过金刚石车削工艺将镀铝面车削成平面,最后在氟化锂晶体另一面蒸镀剩余反射率低于1%的增透膜,最终获得高质量的铝/氟化锂复合双台阶靶。采用NT1100白光干涉仪、电子比重计、电子能谱、X射线衍射仪、扫描电镜等设备对靶参数进行测量,研究各工艺对靶参数的影响。     

天光Ⅱ-B装置的诊断刻度

设计并制作了天光Ⅱ-B脉冲功率装置的电流电压诊断设备,根据天光Ⅱ-B脉冲功率装置的同轴传输线结构特点,在传输线末端设置了用于测量负载电压的电容分压器。利用金属膜连接传输线外筒与负载外筒构成回流来测量负载的电流,并利用电路模拟软件对此过程进行模拟,两个诊断探头采取直接标定的方法,测定电容分压器的分压比和回流器的灵敏度。实验结果表明,该探头性能稳定、时间响应快、功率负荷大,是测量脉冲电流与电压的一种理想工具。     

基于高温抗辐照SOI CMOS工艺的器件特性研究

绝缘体上硅（SOI）技术因其独特的优势而广泛应用于辐射和高温环境中,研究不同顶层硅膜厚度（tSi）的器件特性,对进一步提升高温抗辐照SOI CMOS器件的性能至关重要。本工作首先通过工艺级仿真构建了N沟道金属氧化物半导体场效应晶体管（NMOSFET）的模型,并对其进行了分析,基于仿真结果,采用015 μm抗辐照SOI CMOS工艺制备出具有不同硅膜厚度的实际器件,该工艺针对高温应用引入了设计与材料的优化。结果表明,薄硅膜和厚硅膜NMOSFET在150 krad(Si) 总剂量辐射下表现出相近的抗辐照加固性能,而前者在225 ℃高温下具有较小的漏电流,因此具有较薄硅膜的NMOSFET更适用于高温电子器件的制造。     

透视/遮阳/控温/红外隐身多功能集成序构薄膜研究

为了解决光学材料多功能耦合与集成的光谱诉求及其材料设计冲突难题,本文提出一种基于［TiAlN/Ag］²/TiAlN序构复合薄膜开展可见光透射诱导与红外辐射抑制的协同设计方法,诠释序构薄膜材料多功能耦合的新原理与新机制,并对其光学兼容性能测试表征。研究表明,构筑的［TiAlN（厚度30 nm）/Ag（厚度15 nm）］²/TiAlN（厚度30 nm）序构复合薄膜具备带通状选择性透射与中远红外低辐射的光学特性,可较好实现透视、遮阳、低辐射控温与红外隐身多功能兼容效果,在军用车辆、绿色建筑等特种玻璃的辐射控温与红外隐身领域有应用潜力。