退火温度对ZnO掺杂ITO薄膜性能的影响

利用电子束蒸镀方法,在K8玻璃衬底上沉积ZnO掺杂ITO(ZnO-ITO)与ITO薄膜。研究不同退火温度对ZnO-ITO薄膜的微观结构的影响;对比分析了在不同退火温度条件下,ZnO-ITO和无掺杂ITO薄膜的光电性能。结果发现,ZnO-ITO薄膜具有较大的晶粒尺寸,随着退火温度的上升,晶体结构得到改善,表面粗糙度减小,薄膜的光电性能显著提高。ZnO-ITO薄膜经过500℃退火后得到最佳的综合性能,其表面均方根粗糙度(RMS)为32.52nm,电阻率为1.43×10-4Ω.cm;对442nm波长的光,透射率可达98.37%;与ITO薄膜相比,ZnO-ITO薄膜具有显著的抗PEDOT:PSS溶液腐蚀的能力。     

不确定信息下的评估指标权重配置方法

为了解决在数据不确定条件下极大熵权重配置模型找寻最优权重的问题,引入云模型将具有随机性和模糊性的数据转换为定性的数字特征。以此为基础在逼近理想解排序方法架构下定义了正负理想解,基于改进的欧氏距离设计了正负向距离,提出了多评估对象相对能力量化模型,并在极大熵准则下构建了新的权重配置模型,使得评估对象相对能力大小排序的专家知识得到充分运用。通过分析采用了模拟退火算法实现最优指标权重的搜寻,解决了原先算法模型不能应用于非凸优化情形的问题,进而给出科学合理的权重配置方案。仿真实例表明,在多次迭代后找寻到最优权重熵为1.377 7,满足要求,证明了所提算法的有效性。     

基于遗传退火算法的MTI 滤波器设计方法

动目标显示(MTI)是雷达杂波抑制的重要技术之一,MTI 滤波器系数和脉冲参差比设计对MTI 的抗杂波性能至关重要。遗传退火算法将模拟退火算法过程溶入遗传算法,同时克服了遗传算法容易陷入局部最优和模拟退火算法收敛速度慢的缺点。文中介绍了一种将遗传退火算法应用于MTI 滤波器的设计方法,该方法可找到最优MTI 滤波器。实验结果表明,针对给定的MTI 滤波器设计要求,该方法能快速完成优化遍历,优化后滤波器性能提升明显。     

Thermal stability of devices with molybdenum oxide doped organic semiconductors

We demonstrate the thermal stability of transition-metal-oxide (molybdenum oxide; MoO₃)-doped organic semiconductors. Impedance spectroscopy analysis indicated that thermal deformation of the intrinsic 1,4-bis[N-(1-naphthyl)-N′-phenylamino]-4,4′-diamine (NPB) layer is facilitated when the MoO₃-doped NPB layer is deposited on the intrinsic NPB layer. The resistance of the intrinsic NPB layer is reduced from 300 kΩ to 3 kΩ after thermal annealing at 100 °C for 30 min. Temperature-dependent conductance/angular frequency–frequency (G/w-f-T) analysis revealed that the doping efficiency of MoO₃, which is represented by the activation energy (E_a), is reduced after the annealing process.     

Microstructure and electrical properties of high power laser thermal annealing on inkjet-printed Ag films

In this work, a high power continuous-wave (CW) Nd:YAG laser was used for thermal treatment of inkjet-printed Ag films - resulting in the elimination of organic additives (dispersant, binder, and organic solvent) in the Ag ink and annealing of Ag nano-particles. By optimizing laser parameters such as laser power and defocusing value, the laser energy can be totally converted into heat energy, which is used for thermal treatment of inkjet-printed Ag films. This results in the microstructure and the resistivity of the films to be controlled. We investigated the thermal diffusion mechanisms during laser annealing and the resulting microstructures. The impact of high power laser annealing on microstructures and electrical characteristics of inkjet-printed Ag films was compared to those of the films annealed by a conventional furnace annealing. Focused ion beam (FIB) channeling images show that the laser annealed Ag films have large columnar grains and a dense void-free structure, while furnace annealed films have much smaller grains and exhibit void formation. As a result, the laser annealed films have better electrical properties (low resistivity) compared to furnace annealed samples.     

磷（P31^＋）注入Si的快速退火电特性

本文报告了P_(31)~+离子注入Si中快速退火的电特性研究结果。采用高精度四探针测量了P_(31)~+注入层在不同注入剂量下,薄层电阻与退火温度和退火时间的关系。采用自动电化学测量仪PN-4200,测量了P_(31)~+离子注入Si中的载流子剖面分布。     

热处理工艺对Al/Cu双金属复合界面的影响

采用POLYVAR-MET型金相显微镜、带有GENESIS60S能谱仪的Sirion200场发射扫描电镜对经高温和低温退火处理的Al/Cu双金属复合界面组织进行观察分析,研究热处理工艺对界面组织及扩散层厚度的影响规律,并进一步通过冷轧实验研究扩散层厚度与界面结合强度的关系,获得综合满足材料结合强度和成型性能的热处理工艺。结果表明:高温退火处理的Al/Cu复合试样难以实现稳定的塑性成型,低温退火处理能使界面结合牢固,冷变形塑性好;Al/Cu双金属复合材料的界面扩散结合层厚度的最佳范围为1.2~3.5μm;最佳工艺为低温退火加热到300~350℃,保温45~60 min。     

混合模拟退火算法解决VLSI布局问题

VLSI布局问题是集成电路物理设计过程中的关键步骤，它直接影响整个设计的成败。Slicing结构是一种简单而高效的布局表示方法，采用正则波兰表达式编码，将模拟退火与禁忌搜索算法结合形成了一种以模拟退火算法为基础的混合算法进行求解，用MCNC benchmarks进行实验，结果表明：文章提出的混合算法比模拟退火算法在求解效率和质量上都有较大的提高。     

模拟退火算法在单目标规划问题中的应用

模拟退火算法是一种用于解决连续、有序离散和多模态优化问题的随机优化技术。它对于非常复杂，高度非线性的大型系统优化的求解，表现出比其他传统优化算法更加独特和优越的性能。现介绍了模拟退火算法的原理、数学模型及其求解步骤，并以一实例来说明模拟退火算法在解决组合优化问题时的有效性和优越性。     

Hole trapping in E-beam irradiated SiO2 films

Low energy (25 kV) electron beam irradiation of MOS capacitors is shown to produce neutral hole traps in thin ‘radiation hardened’ SiO₂ films. These traps are found in an uncharged state after irradiation and are populated by passing a small hole current, generated by avalanche breakdown of then-type silicon substrate, through the oxide. From the time dependence of the observed trapping, a capture cross-section between 1 × 10∼⁻¹³ and 1 × 10⁻¹⁴ cm² is deduced. The trap density is found to depend on the annealing conditions and incident electron beam dosage. The density of traps increases with incident electron beam exposure. Once introduced into the oxide by the radiation the traps can be removed by thermal anneals at temperatures above 500° C. Parallels between electron and hole trapping on these neutral centers are strong evidence for an amphoteric uncharged trap generated by ionizing radiation.