家用微波炉磁控管用碳化La2O3-Mo阴极

研究了家用微波炉磁控管碳化La2 O3 Mo阴极 ,参照碳化ThO2 W阴极磁控管的制作工艺 ,成功实现了La2 O3 Mo阴极的碳化以及碳化La2 O3 Mo阴极磁控管的去气、激活。碳化La2 O3 Mo阴极的微波能量输出功率为 5 0 0W ,而同类型的碳化ThO2 W阴极磁控管的额定微波能量输出为 90 0W。通过分析认为 ,碳化La2 O3 Mo阴极磁控管微波输出能量不足的主要原因在于碳化La2 O3 Mo阴极材料本身的电子发射能力不足。     

Preparation and characterization of GaN films grown on Ga-diffused Si （111） substrates

Hexagonal GaN films were prepared by nitriding Ga2O3 films with flowing ammonia. Ga2O3 films were deposited on Ga-diffused Si (111) substrates by radio frequency (r.f.) magnetron sputtering. This paper have investigated the change of structural properties of GaN films nitrided in NH3 atmosphere at the temperatures of 850, 900, and 950℃ for 15 min and nitrided at the temperature of 900℃ for 10, 15, and 20 rain, respectively. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) were used to analyze the structure, surface morphology and composition of synthesized samples. The results reveal that the as-grown films are polycrystalline GaN with hexagonal wurtzite structure and GaN films with the highest crystal quality can be obtained when nitrided at 900℃ for 15 min.     

反应溅射制备AlN薄膜中沉积速率的研究

通过对浅射过程中辉光放电现象及薄膜沉积速率的研究，发现随着氮浓度的增大，靶面上形成一层不稳定的AlN层，由于AlN的溅射速率远小于Al，从而使薄膜的沉积速率显著下降。同时还研究了其它溅射参数对薄膜沉积速率的影响。结果表明：随靶基距的增大靶功率的减小，不同程度引起沉积速率的下降；随着溅射气压的增大，最初沉积速率不断增大，当溅射气压增大到一定程度时，沉积速率达到最大值，之后随溅射气 压的增大，又不断减小。     

高透明低发射率ITO薄膜的制备及其光电性能研究

目的研究磁控溅射工艺对ITO薄膜光电性能的影响,为制备高性能ITO薄膜提供数据和理论支撑。方法采用磁控溅射在PET基材上制备ITO薄膜,利用扫描电镜、X射线衍射仪、分光光度计、四探针、红外发射率测仪、Hall效应测试系统等,分析工艺参数对ITO薄膜光电性能的影响。结果随着氧气流量的增加,ITO薄膜在可见光区的透过率先增加,然后变缓,薄膜方块电阻先降低后升高;随着工作气压的增加,ITO薄膜的可见光透过率增加,薄膜方块电阻先下降后上升,电阻率先变小再增大,载流子浓度先增大后减小,红外发射率先减小后增大,晶体结构逐渐由晶态转变为非晶态;随着氩氧比的降低,薄膜红外发射率先降低,然后缓慢升高;随溅射时间的增加,薄膜的厚度逐渐增大,方块电阻、红外发射率和可见光透过率迅速下降,晶体结构逐渐由非晶结构转变为晶体结构。综合对比研究发现,当氧气流量为0.6 mL/min、工作气压为0.4 Pa、氩氧比为19.8∶0.2、溅射时间为80 min时,可获得综合性能优异的ITO薄膜,其可见光透过率大于80%,在8～14μm红外波段的辐射率小于0.2。结论磁控溅射工艺参数是决定薄膜综合质量的重要因素,通过严格控制工艺参数,可获得透明性高、发射率低的ITO薄膜。     

Microstructure and Application of YBCO Superconductive Films with Low Surface Resistance

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低密度超细银包铝复合软导线的制备工艺研究

采用磁控溅射真空镀膜技术制备银包铝复合线坯,通过后续不退火多道次拉拔,制备低密度的超细银包铝复合软导线。结果表明,磁控溅射处理时,银镀层厚度随走线速度加快而变薄,随溅射电流增加而增厚;拉拔加工要求银镀膜层厚度大于1.3μm,道次变形量宜小于7%;随银镀层厚度增加,制备的10μm超细丝的密度和抗拉强度均增大。将φ15μm的纯铝芯材采用优选条件溅射镀银膜,经拉拔加工制得φ10μm的银包铝复合软导线,其密度为4.87 g/cm~3,抗拉强度286 MPa,复层表面均匀致密无缺陷。     

An overview on microwave processing of material: A special emphasis on glass melting

Material processing adopting microwave heating has emerged as an alternative tool owing to faster processing, a cleaner environment, and several other advantages. This review provides a summary of recent reports of microwave synthesis of materials. This study reviews the use of microwave energy for application in several material processing technologies apart from food processing. A special emphasis has been made in the processing of glass adopting microwave energy. Melting of glass comprising SiO₂, P₂O₅, B₂O₃ as the main building block has been discussed. It has been revealed that silica, a microwave transparent material as reported earlier, can be heated under microwave heating directly. Microwave absorption of raw materials and different glass system has been discussed. Dielectric properties, particularly loss tangent or loss factor, are presented for some glass composition. Less evaporation of ingredient and low contamination from the crucible wall are noticed during glass melting using microwave heating. Enhanced iron redox ratio (Fe⁺²/∑Fe) in microwave processing may be considered an advantage in the preparation of heat absorbing filter glass. Small-scale glass melting using the microwave heating has a significant impact on energy and time saving. However, the challenges associated with the upscaling glass melting with microwave heating and future scope have been talked about.     

射频输入功率对DLC∶F∶Si薄膜结构和附着特性的调制机理

以SiC陶瓷靶为靶材,Ar和CHF_3为源气体,采用反应磁控溅射法在双面抛光的316L不锈钢基片上制备出了系列Si和F共掺杂的DLC∶F∶Si薄膜。研究了射频输入功率对薄膜的附着力、硬度和表面接触角的影响。结果表明,选取适当的输入功率(180W左右)可以制备出附着力达11N的DLC∶F∶Si薄膜。通过拉曼和红外光谱分析以及样品粗糙度分析,作者提出了输入功率对DLC∶F∶Si薄膜结构和特性调制的机理,即输入功率直接影响SiC靶的溅射产额、空间Ar~+的能量以及CHF_3的分解程度,继而影响空间Si、C、-CF、-CF_2,特别是F~*等基团的能量和浓度,调制薄膜中F含量以及Si-C键含量和C网络的关联度。Si-C、C=C键的增加有助于薄膜附着力的明显改善,F含量的减少则会导致薄膜的疏水性能有所下降。     

Cu/Al_2O_3复合薄膜的制备及其抗氧化性能

本文在纺织纤维基材表面采用二次溅射沉积法制备了Cu/Al_2O_3复合薄膜,利用扫描电镜(SEM)、X射线能谱仪(EDX)和矢量网络分析仪对室温环境下存放3600h的复合薄膜的表面形貌、元素含量以及屏蔽效能进行了测试,并与相同工艺条件下制备的纯Cu薄膜进行了对比分析。结果表明:与纯Cu薄膜结构的不稳定性相比,由于复合薄膜表层Al_2O_3薄膜的结构稳定性和致密性,Cu/Al_2O_3复合薄膜在保证高屏蔽性能的前提下,具有整体结构的稳定性,表现出了良好的抗氧化性能。     

高透钻面玻璃在线连续镀膜技术研究

使用立式连续直线镀膜生产线,采用真空磁控溅射技术在玻璃表面设计并镀制了Nb2O5/Si O2/Nb2O5/Si O2/CNx多层纳米硬质增透薄膜,并研究其透过率、硬度及理化性能。结果表明:通过引入线性阳极层离子源,控制并形成新的磁控溅射镀膜工艺,钻面玻璃产品的表面硬度达994.8 HV,是普通玻璃的2倍以上;在可见光透过率≥94%,具有一定的增透效果;经过酸/碱/溶剂/热处理后的透过率衰减ΔT0.1%,理化性能优良。