WO3薄膜的磁控溅射法制备及电致变色性能

采用直流反应磁控溅射制备了具有优异电致变色性能的WO3薄膜。通过对成膜参数的调控,实现了低功率和短溅射时间的制膜制度,获得了较宽的工艺范围。通过X射线衍射仪、场发射扫描电子显微镜、光学轮廓仪、电化学工作站、紫外-可见-红外分光光度计研究了薄膜的物相、微观结构、厚度、电致变色性能。研究表明:在溅射功率为50 W,溅射压强为2.0 Pa,反应气体流量为20 sccm时所制得的薄膜性能最为优越。所制备薄膜具有较短的变色响应时间和大幅度的变色调制幅度,其对可见光变色调制幅度达到80%。     

GZO厚度对非晶硅电池中复合背电极的影响

在非晶硅太阳能电池中加入复合背电极是提高非晶硅太阳能电池光电转换效率和稳定性的有效手段.本文利用磁控溅射技术在非晶硅薄膜太阳能电池上制备了ZnO :Ga(GZO)/Al复合背电极,研究了GZO厚度对GZO薄膜光电性质及非晶硅电池中GZO/Al复合背电极性能的影响.研究表明：随着GZO层厚度的增加,GZO薄膜的光电性质均表现出较高水平,适合制备GZO/Al复合背电极;相较于单层Al背电极的非晶硅太阳能电池,具有GZO/Al复合背电极的太阳能电池性能大幅提高.当GZO层厚度为100 nm时,太阳能电池的短路电流(I_SC)、开路电压(V_OC)和填充因子(FF)分别达到8.66 mA,1.62 V和54.7%.     

氮流量比对磁控溅射(CoCrFeNi)Nx高熵合金薄膜的组织和性能的影响

采用直流磁控溅射法制备(CoCrFeNi)N_x高熵薄膜,研究了氮流量比对薄膜的力学性能和电磁性能的影响。结果表明,在不同氮流量比条件下制备的(CoCrFeNi)N_x薄膜,都具有致密的组织、简单的FCC结构并呈现(200)择优取向。随着氮流量比从10%提高到30%,薄膜的硬度和弹性模量随之增大,其最大值达到14 GPa和212 GPa;电阻率基本上呈增大的趋势,最大值达到138 μΩ?cm;饱和磁化强度和磁导率随之减小,薄膜饱和磁化强度最高为427.43 emu/cm³。薄膜的矫顽力约为0。     

衬底偏压对反应磁控共溅射 Y∶HfO2薄膜电学性能的影响

作为微电子器件中最具发展前景的高介电薄膜材料,HfO₂薄膜得到了学者们的广泛研究。低漏电流是HfO₂薄膜使器件获得优良性能的前提,但易受晶粒尺寸、氧空位和粗糙度等因素影响。针对反应磁控溅射所得薄膜表面粗糙度高及漏电流密度大等缺点,本文在溅射过程中通过在衬底施加偏压的方法降低了HfO₂薄膜的漏电流密度。结果表明：通过在衬底施加适当的偏压使得Y掺杂HfO₂(Y∶HfO₂)薄膜的漏电流密度降低到8×10^-8 A/cm²。漏电流密度的变化与薄膜粗糙度和晶粒尺寸有关,而薄膜粗糙度和晶粒尺寸主要受衬底偏压的影响,但衬底偏压对薄膜物相的影响可以忽略。通过施加衬底偏压,利用反应磁控溅射方法制备了低漏电流和高k值Y∶HfO₂薄膜,可为高性能器件的制备提供基础。     

Effect of Sm-doping on the morphology and magnetic properties of radio frequency magnetron sputtered Ni-Mn-Ga films

Ni55.5Mn21Ga23.5 and Ni54Mn22Ga23Sm1 films were prepared by radio frequency (RF) magnetron sputtering. The effect of Sm do-pant on the morphologic and magnetic properties of Ni55.5Mn21Ga23.5 films was investigated. Sm doping can refine the particle size of the films from 100 to 60 nm, and further grain growth is not occurs even after annealing at 1073 K for 3.6 ks. Compared to Ni55.5Mn21Ga23.5 films, Sm-doped Ni54Mn22Ga23Sm1 films are easier to be magnetized and have a lower martensitic transformation temperature. In addition, the Curie temperature can also be adjusted, decreasing from 350 to 325 K after Sm doping. Martensitic transformation is not observed in the Sm-free films, which is close to the Curie temperature in the Sm-doped films, giving rise to the overlap of the structural and magnetic transi-tion temperatures.     

CrAIN／TiAIN纳米多层膜的微结构及其性能研究

采用磁控反应溅射法制备了不同调制周期的CrAIN／TiAIN纳米多层膜,并通过x射线衍射仪、显微硬度计、扫描电镜分析了调制周期对多层膜的微结构、力学性能和高温抗氧化性能的影响。结果表明：CrAIN／TiAIN纳米多层膜共格外延生长,呈现CrAIN（或TiAIN）面心立方结构,且呈（111）择优取向;CrAIN／TiAIN纳米多层膜在某些调制周期出现硬度异常升高的超硬度效应;CrAIN／TiAIN纳米多层膜比CrAIN,TiAIN单层膜具有更好的高温稳定性,高温时仍具有较高的硬度。     

不同溅射时间下AlN缓冲层对ZnO薄膜的影响

实验采用射频磁控溅射技术,制备了不同溅射时间下AlN缓冲层的ZnO薄膜,研究了薄膜的结构、形貌及电学性能.结果表明,不同溅射时间下AlN缓冲层ZnO薄膜的生长依然是(002)择优取向,而且当缓冲层溅射时间为60min时,ZnO薄膜的结构和电学性能最好.     

NiFe层厚度对薄膜磁阻性能的影响

用直流磁控溅射方法制备了以Ta为缓冲层的Ni80Fe2O薄膜。研究了NiR层厚度对薄膜电阻变化量△R的影响。实验发现△R随NiFe厚度先变大后减小，最大约为0．3Ω，当NiFe厚度达到140nm后△R趋于饱和。其变化的原因是NiFe厚度影响着晶粒尺寸和表面粗糙度，进而影响着电子的散射，使△R呈现上述的变化趋势。     

Microstructure of direct current and pulse magnetron sputtered Cr-B coatings

Chromium diboride thin films possess desirable combinations of properties (such as high hardness, wear resistance, chemical inertness, high thermal and electrical conductivity), which are attractive for a wide range of potential industrial applications. However, these properties depend strongly on the deposition process and parameters. Investigation of the resultant coating structures could explain certain differences between them, giving important information about the characteristics of the deposition process (which in this particular case is a recently developed method involving magnetron sputtering of loosely packed blended powder targets) and pointing out directions for improvement.In this paper, Cr-B coatings deposited by direct current (DC) and DC-pulse magnetron sputtering of loosely packed blended powder targets are characterised by transmission electron microscopy (TEM) techniques (electron diffraction and bright-field/dark-field imaging). The structures of the coatings deposited with different parameters are investigated and compared, and the effect of oxygen contamination on the structure is discussed.Coatings with an extremely fine, nanocolumnar structure were observed. DC sputter deposited (and generally non-stoichiometric) Cr-B coatings exhibit a short range ordered ‘zone T’ microstructure, while DC-pulse deposited stoichiometric CrB₂ coatings are dense and defect-free, crystalline and show strong preferred orientation.A small amount of contamination by oxygen of the interfacial sub-layers (due to the target material being a powder) of the DC-pulse magnetron sputter deposited stoichiometric CrB₂ (and near-stoichiometric CrB) coatings was found to affect the structure by suppressing nanocolumnar growth and promoting equiaxed, nanometer-sized grains, close to the coating/substrate interface. The majority of the coating however remained nanocolumnar.     

A study of amorphous and crystalline phases in In2O3-10 wt.% ZnO thin films deposited by DC magnetron sputtering

We report on the processing, phase stability, and electronic transport properties of indium oxide (In₂O₃) doped with 10 wt.% zinc oxide (ZnO) deposited to a thickness of 100 nm using DC magnetron sputter deposition at room temperature and 350 °C. We compare the optimum oxygen content in the sputter gas for pure In₂O₃ and doped with (i) 10 wt.% ZnO and (ii) 9.8 wt.% SnO₂. Amorphous IZO films were annealed at 200 °C in air and N₂/H₂ and resistivity, Hall mobility, and carrier density along with molar volume change were monitored simultaneously as a function of time at temperature. We report that annealing the amorphous oxide in air at 200 °C does not lead to crystallization but does result in a 0.5% decrease in the amorphous phase molar volume and an associated drop in carrier density. Annealing in forming gas leads to an increase in carrier density and a small decrease in molar volume. We also report that when annealed in air at 500 °C, the amorphous IZO phase may crystallize either in the cubic bixbyite or in a recently observed rhombohedral phase.