透明导电薄膜在不同衬底上的性能对比研究

为了对比研究不同透明衬底上ZnO:Al(ZAO)薄膜的性能,采用直流反应溅射法制备薄膜,并对其作EDS、XRD和电学测试分析.结果表明:所制备的ZAO薄膜具有典型的ZnO晶体结构;沉积在玻璃基片上的ZAO薄膜,Al,O含量高于沉积在透明聚酯塑料基片上的,而Zn的含量则相反;在两种衬底上获得的ZAO薄膜电阻率分别为4.5×10-4Ω*cm和9.73×10-4Ω*cm,可见光透射率分别达到87.7%和81.5%.由此可见:用直流反应磁控溅射法在不同衬底上都能获得可见光透射率达到80%以上的ZAO薄膜;相比而言,在玻璃衬底上获得的ZAO薄膜电阻率低,而在透明聚酯塑料上沉积的ZAO薄膜透射性好.     

金属合金巨磁阻抗三明治结构多层薄膜研究进展

介绍了金属软磁合金三明治结构多层膜巨磁阻抗效应的研究和应用现状、以及多层薄膜的制备方法和表征手段。最后介绍了磁电阻磁头和磁传感器等的应用情况和对该领域研究的展望。     

聚酰亚胺基纳米氟碳膜的结构和性能研究

利用射频磁控溅射法，以聚四氟乙烯为靶材，在聚酰亚胺(PI)薄膜上沉积纳米氟碳膜。利用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、原子力显微镜(AFM)观察了纳米氟碳膜的表面形貌。通过优化放电条件，在PI薄膜上得到了一层致密均匀的由纳米粒子组成的氟碳膜。利用X射线光电子能谱(XPS)研究了膜的结构及其对放电条件的依赖性。结果表明：这种纳米氟碳膜由-CF3，-CF2，-CF-和-C-4个组分构成。水接触角的测量数据表明：在PI基底上沉积纳米氟碳膜可以提高其憎水性能。     

退火对直流磁控溅射铬膜附着性的影响

为了利用铬膜改善锆的抗腐蚀性，研究了退火对Zr-2基体上制备的直流磁控溅射铬膜附着性的影响，使用扫描电镜（SEM）观察了界面形貌及锆，铬的界面的分布，用X－射线衍射仪（XRD）分析了膜层的组成，用划痕法测定了铬膜的附着，结果表明，锆／铬界面结合良好，边界可见；与现有文献比较，获得的铬膜附着性好――均超过20N；溅射后退火使Zr-Cr界面更像扩散界面，但X－射线衍射结果未发现有界面反应产物；退火提高铬膜与Zr-2基体的附着性约50％，扩散际着附着性增加的主要因素。     

非晶Fe-Zr-B薄膜穆斯堡尔谱学研究

用X射线衍射分析、X射线光电子能谱(XPS)和穆斯堡尔谱学研究了直流磁控溅射法制备的Fe-Zr-B薄膜。X射线衍射分析结果表明制备态的薄膜是非晶的;X射线光电子能谱(XPS)结果表明样品表面氧化较明显,深层部分Fe, Zr, B结合占主导地位;穆斯堡尔谱学结果表明薄膜中Fe原子周围Zr、B原子的存在使Fe原子核内场值有所下降并导致超精细场分布P(H)出现双峰结构,薄膜中存在两种不同的局域微结构。     

磁控溅射技术新进展及应用

主要简介了磁控溅射技术的基本原理、基本装置、近年来出现的新技术(多靶磁控溅射技术、磁场扫描法、非平衡磁控溅射、脉冲磁控溅射技术、磁控溅射技术与其它成膜技术相结合等),以及国内外利用磁控溅射技术在多层膜和化合物薄膜制备方面取得的一些成果.     

（Pb1-xSrx）TiO3系薄膜铁电性能的工艺因素研究

钛酸锶铅((Pb1-xSrx)TiO3)薄膜是一种重要的铁电薄膜,应用潜力很大,是高新技术研究的前沿和热点之一.通过磁控溅射的方法制备了PST薄膜,详细研究了不同工艺因素对PST薄膜铁电性能的影响.结果表明,选择合适的工艺条件可以制备铁电性能优良的钙钛矿相PST薄膜.     

The Influence of Nitrogen and Boron Implant into Silicon Substrate on the Phase and Internal Stress of c-BN Films

Cubic boron nitride(c-BN) film was deposited on a Si (100) substrate by the RF-magnetron sputtering.The mainly problems for fabrication of c-BN films are the low purity and high intrinsic compressive stress. In order to solve the two problems, the c-BN film with the buffer interlayer was deposited on the substrate which had been implanted with nitrogen and/or boron ions. The results show: the implantation of nitrogen ions can obviously increase c-BN content and reduce the internal stress slightly; while the implantation of boron shows no obvious improvement to the content of c-BN, which can reduce the internal stress in the film obviously. In addition, it is suggested that the implantation of nitrogen and boron shows the best result, which not only can increase the content of c-BN, but also reduce the internal stress in the c-BN film obviously.     

Freeze-fracturing for conventional and field emission low-temperature scanning electron microscopy: the scanning cryo unit SCU 020

A dedicated cryopreparation system, the SCU 020 (Balzers), is introduced and described in detail for use in low-temperature scanning electron microscopy (LTSEM). The basic unit consists of two parts: (i) a high-vacuum preparation chamber equipped with a cold-stage, motor-driven fracturing microtome, planar magnetron (PM) sputter source, quartz-crystal thin-film monitor, Meissner cold trap, and turbo molecular pump stand; and (ii) a second part (separated from the first by a sliding, high-vacuum valve) residing in the SEM chamber. This is equipped with an anti-contamination cold trap, a fully movable goniometer cold stage (having motor drives for x, y, and rotation) and replaces the SEM's original stage (Raith). The SCU 020 is entirely self contained allowing independence from, and synchroneity with, the SEM of choice. LTSEM micrographs of specimen (that are fully frozen hydrated or partially freeze-dried) surfaces or fracture faces, without or with various metal coatings, can be examined over a broad temperature range (-150 to +50°C). This is made possible by the combined application of the two, independently controlled, cold stages and the on-line, high-vacuum, specimen cryo transfer between them. In-situ etching is simple and straightforward. Intramembranous particles and membrane fracture steps, typically imaged in transmission electron microscopy (TEM), are resolved by PM sputtering with platinum at low specimen temperature and high-resolution LTSEM in a field emission microscope.     

Facile synthesis of three‐dimensional graphene networks by magnetron sputtering for supercapacitor electrode

Three‐dimensional (3D) graphene network deposition on Ni foam without any conductive agents and polymer binders was successfully synthesized by radio frequency magnetron sputtering at low temperature. The direct and close contact between graphene and Ni foam is beneficial to the enhanced conductivity of the electrode, as well as the improvement of ion diffusion/transport into the electrode. As a result, the 3D graphene network deposition on Ni foam electrode delivered a high specific capacitance of 122.0 F g⁻¹ at 1.0 A g⁻¹ and excellent cycle stability with capacitance retention of 99.0% after 1000 charge–discharge cycles. The work shows a new way to facile synthesis of 3D graphene network for various applications in the future. Copyright © 2016 John Wiley & Sons, Ltd.