Effects of SiC content on the densification,microstructure, and mechanical properties of HfB2–SiC composites

To investigate the effects of SiC on microstructure, hardness, and fracture toughness, 0, 10, 20, and 30 vol% SiC were added to HfB₂ and sintered by SPS. Upon adding SiC to 30 vol%, relative density increased about 4%; but HfB₂ grain growth had a minimum at 20 vol% SiC. This may be due to grain boundary silicate glass, responsible for surface oxide wash out, enriched in SiO₂ with higher fraction of SiC. By SiO₂ enrichment, the glass viscosity increased and higher HfO₂ remained unsolved which subsequently lead to higher grain growth. Hardness has increased from about 13 to 15 GPa by SiC introduction with no sensible variation with SiC increase. Residual stress measurements by Rietveld method indicated high levels of tensile residual stresses in the HfB₂ Matrix. Despite the peak residual stress value at 20 vol% SiC, fracture toughness of this sample was the highest (6.43 MPa m^0.5) which implied that fracture toughness is mainly a grain size function. Tracking crack trajectory showed a mainly trans-granular fracture, but grain boundaries imposed a partial deflection on the crack pathway. SiC had a higher percentage in fracture surface images than the cross-section which implied a weak crack deflection.     

Optimised phase compositions and improved microwave dielectric properties based on calcium tin silicates

The Ca_(1+2y)Sn_(1-x)Si_(1+y)O_(5-2x+4y) low-permittivity microwave dielectric ceramics were prepared through solid-state reaction at 1350–1450 °C for 5 h. The relations between microwave dielectric properties and phase compositions for non-stoichiometric Ca_(1+2y)Sn_(1-x)Si_(1+y)O_(5-2x+4y) ceramics have been investigated. A single CaSnSiO₅ phase with abnormally positive temperature coefficient of resonant frequency (τ_f = + 62.5 ppm/°C) was synthesised at 1450 °C. This composition was an effective τ_f compensator of CaSiO₃ and Ca₃SnSi₂O₉ phases with typically negative τ_f value. The CaSiO₃ second phase was related to the Sn deficiency in the CaSn_(1-x)SiO_(5-2x) (0 < x < 1.0) composition, whereas the Ca₃SnSi₂O₉ second phase was obtained by controlling the Ca:Sn:Si ratios on the basis of the Ca_(1+2y)SnSi_(1+y)O_(5+4y) (0 < y < 1.0) composition. A promising low-permittivity millimetre-wave ceramic with most excellent microwave dielectric properties (ε_r = 10.2, Q×f = 81,000 GHz and τ_f = −4.8 ppm/°C) was produced from the Ca_(1+2y)SnSi_(1+y)O_(5+4y) (y = 0.4) ceramic.     

Effects of hydrolysis of precursor on the structures and properties of polymer-derived SiBN ceramic fibers

In this paper, polyborosilazane precursor was synthesied from HMDZ, HSiCl₃, BCl₃ and CH₃NH₂ using a multistep method. By controlling the storage conditions, parts of the polyborosilazane fibers were hydrolyzed. FT-IR, NMR, XRD, TEM and monofilament tensile strength test were employed to study the effects of hydrolysis of precursor on the structures and properties of polymer-derived SiBN ceramic fibers. FT-IR and NMR results indicate that Si-N group in PBSZ reacts with H₂O to form Si-O-Si group. After pyrolysis reaction at 1400℃, Si-O-Si group will finally transformed into highly ordered cristobalite and β-quartz, resulting in formation of the wrinkled surface of the obtained SiBN ceramic fiber. The strip-like defects on fiber surface, according to monofilament tensile strength test, had a significant effect on mechanical property of the obtained SiBN ceramic fiber and caused no increase in fiber tensile strength of hydrolytic polyborosilazane fiber before and after pyrolytic process.     

Microwave dielectric properties of ultra-low loss Li2MgTi0.7(Mg1/3Nb2/3)0.3O4 ceramics sintered at low temperature by LiF addition

In this work, ultra-low loss Li₂MgTi_0.7(Mg_1/3Nb_2/3)_0.3O₄ ceramics were successfully prepared via the conventional solid-state method. X-ray photoelectron spectroscopy (XPS), thermally stimulated depolarization current (TSDC) and bond energy were used to determine the distinction between intrinsic and extrinsic dielectric loss in (Mg_1/3Nb_2/3)⁴⁺ ions substituted ceramics. The addition of (Mg_1/3Nb_2/3)⁴⁺ ions enhances the bond energy in unit cell without changing the crystal structure of Li₂MgTiO₄, which results in high Q·f value as an intrinsic factor. The extrinsic factors such as porosity and grain size influence the dielectric loss at lower sintering temperature, while the oxygen vacancies play dominant role when the ceramics densified at 1400?°C. The Li₂MgTi_0.7(Mg_1/3Nb_2/3)_0.3O₄ ceramics sintered at 1400?°C can achieve an excellent combination of microwave dielectric properties: ε_r =?16.19, Q·f?=?160,000?GHz and τ_f =??3.14?ppm/°C. In addition, a certain amount of LiF can effectively lower the sintering temperature of the matrix, and the Li₂MgTi_0.7(Mg_1/3Nb_2/3)_0.3O₄-3?wt% LiF ceramics sintered at 1100?°C possess balanced properties with ε_r?=?16.32, Q·f?=?145,384?GHz and τ_f =??16.33?ppm/°C.     

Structural,morphological, dielectric and magnetic properties of Zn-Zr co-doping yttrium iron garnet

In this study, yttrium iron garnet co-doped with Zn and Zr atoms with a chemical formula Y₃Zn_xZr_xFe_(5−2x)O₁₂ (x = 0.0-0.3) has been successfully prepared by the solid-state reaction method. The effects of doping concentration on the microstructure, crystal structure, magnetic properties, and dielectric properties of Y₃Zn_xZr_xFe_(5−2x)O₁₂ were investigated. The microstructure analysis indicates that co-doping of YIG with Zn and Zr can effectively reduce the grain size of the ceramic. The crystal structure results reveal that the doping concentration of Zn–Zr has substantial influence on the lattice parameters of YIG, such as, increases the lattice constant, crystal cell size, and interplanar spacing. However, the second phase of ZrO₂ appears once x ≥ 0.15. Additionally, the dielectric properties of YIG ferrite can be regulated using this Zn–Zr co-doping method. Zn–Zr co-doping can improve the dielectric stability and reduce the dielectric loss at high temperature. The magnetization measurement shows that the saturation magnetization is stabilized at x < 0.15, and the magnetic loss is decreased with the increase in the doping concentration. Overall, the findings show that the ceramic with x = 0.1 exhibits better properties included high saturation magnetization (24.607 emu/g), low magnetic loss (0.0025 @ 1 MHz), and relatively low dielectric loss (496 @ 400°C).     

Matrix influence on the piezoelectric properties of piezoelectric ceramic/polymer composite exhibiting particle alignment

This study was addressed to the influence of an electric field strength applied at fabrication process and matrix properties, such as the dielectric constant and the Young's modulus, on “pseudo‐1‐3 piezoelectric ceramic/polymer composite” in order to further enhance the piezoelectricity of that. The pseudo‐1‐3 piezoelectric ceramic/polymer composite consists of linearly ordered piezoelectric ceramic particles in polymer material. Silicone gel, silicone rubber, urethane rubber, and poly‐methyl‐methacrylate, which exhibit different dielectric constants and Young's modulus, were used as matrices to evaluate the matrix influence. The piezoelectricity of the pseudo‐1‐3 piezoelectric ceramic/polymer composite was evaluated using the piezoelectric strain constant d₃₃. The d₃₃ is one of the indices of the piezoelectric properties for piezoelectric materials. As a result, it was confirmed that d₃₃ of the pseudo‐1‐3 piezoelectric ceramic/polymer composite increased with the increase of the electric filed strength applied at fabrication process, though, it reached a constant value at a certain strength value. Further it was confirmed that dielectric constant of the matrix had a small influence on d₃₃ of the pseudo‐1‐3 piezoelectric ceramic/polymer composite, however, in case of matrix of lower Young's modulus, d₃₃ was increase. © 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015 , 132, 41817.     

Growth behavior of aluminum borate whiskers on zirconia toughened alumina (ZTA) particle surface

In this work, B₄C-covered zirconia-toughened alumina (ZTA) particles are prepared and oxidised at 1050 °C for different times (0, 2, 4, and 8 h) in air. The X-ray diffraction and electron probe micro-analysis results show that the covering layer is mainly composed of oxide B₂O₃ intermetallics, residual B₄C particles, and Al₁₈B₄O₃₃ whiskers. The scanning electron microscopy results show that the growth of Al₁₈B₄O₃₃ whiskers on the ZTA particles enhances with increasing heat preservation time; the optimum holding time is determined to be 8 h Al₂O₃ in the ZTA particles diffuse into the covering layer and combine with B₂O₃ to form Al₁₈B₄O₃₃ whiskers; the Al₁₈B₄O₃₃ whiskers grow via the liquid-solid mechanism.     

High-Tg porous polyimide films with low dielectric constant derived from spiro-(adamantane-2,9′(2′,7′-diamino)-fluorene)

Porous polyimide (PI) films with low dielectric constants and excellent thermal properties have been a pressing demand for the next generation of high-performance, miniature, and ultrathin microelectronic devices. A series of novel porous PI films containing fluorenyl-adamantane groups were prepared successfully via thermolysis of poly(ethylene glycol) (PEG) added in the PI matrix. The cross-sectional morphologies of porous PI films showed closed pores with diameters ranging from 135 to 158 nm, which were uniform and regular in shape without interconnectivity. These porous PI films exhibited excellent thermal properties with a glass-transition temperature at 376 °C whereas the 5% weight loss temperature in air excess of 405 °C due to enhanced rigidity afforded by fluorenyl-adamantane groups. Accompanied by thermolysis content of PEG increasing from 0 to 20 wt %, the density of porous PI films decreased, and the corresponding porosity grew significantly from 0 to 11.48%. Depending on porosity, the dielectric constant and dielectric loss of porous PI films significantly declined from 2.89 to 2.37 and from 0.050 to 0.021, respectively. These excellent properties benefit the as-prepared porous PI films for application as interlayer dielectrics, integrated circuit chips, or multichip modules in microelectronic fields. © 2018 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019 , 136, 47313.     

RF磁控溅射制备钛酸锶钡BST纳米薄膜

钛酸锶钡(BST)薄膜作为一种高K介质材料在微电子和微机电系统等领域具有广阔的应用前景,人们已对BST薄膜的制备工艺技术和介电性能进行了大量的研究。BST纳米薄膜的制备工艺直接影响和决定着薄膜的介电性能(介电常数、漏电流密度、介电强度等)。对RF磁控反应溅射制备BST纳米薄膜的工艺技术进行了综述。从溅射靶的制备、溅射工艺参数的优化、热处理、薄膜组分的控制,及制备工艺对介电性能的影响等方面,对现有研究成果进行了较全面的总结。