Protein Engineering Strategies for Improved Pharmacokinetics

Protein therapeutics have gained momentum in recent years and become a pillar in treating many diseases and the only choice in several ailments. Protein therapeutics are highly specific, tunable, and less toxic than conventional small drug molecules. However, reaping the full benefits of therapeutic proteins in the clinics is often hindered by issues of immunogenicity and short half-life due essentially to fast renal clearance and enzymatic degradation. Advances in polymer chemistry and protein engineering allowed overcoming some of these limitations. Strategies to prolong the half-life of proteins rely on increasing their size and stability and/or fusing them to endogenous proteins (albumin, Fc fragment of antibody) to hijack physiological pathways involved in protein recycling. On the downside, these modifications might alter therapeutic proteins structure and function. Therefore, a compromise between half-life and activity is sought. This review covers half-life extension strategies using natural and synthetic polymers as well as fusion to other proteins and sheds light on genetic engineering strategies and chemical and enzymatic reactions to achieve this goal. Promising strategies and successful applications in the clinics are highlighted.     

1.06μm大功率连续半导体激光器

利用金属有机化学气相淀积(MOCVD)技术,生长了InGaAs/AlGaAs分别限制压应变双量子阱和单量子阱两种材料结构,通过对不同腔长单管激光器的LIV测试获得内部参数,对单、双阱两种材料结构器件参数进行对比分析,确定了单量子阱结构作为1.06μm大功率半导体激光器的材料结构。通过研究单管激光器的电光转换效率与腔长、注入电流的关系,获得了最高达到57.5%的电光转换效率。对1mm腔长单管激光器进行了大电流高温加速老化测试,结果显示研制出的单管激光器室温下在1.5A工作电流下寿命远大于104h。     

CMP承载器的初步研究

在CMP中,由于抛光垫在与其接触的晶圆边缘产生异常压力点,以及转台和承载器旋转的线速度之差在边缘处较其他点大得多,从而导致了晶圆边缘效应的产生。阐述了承载器在CMP中的作用,详细分析了边缘效应产生的原因和克服的方法。在承载器上采用与晶圆保持适当间隙的保持环结构,对保持环施加适当的压力,使保持环和晶圆位于同一抛光平面上;针对旋转式CMP设备固有的线速度之差导致片内非均匀性增大的问题,对200mm晶圆划分两区域进行微压力补偿,同时详细说明了压力补偿气路的设计和实现的功能,指出今后多区域微压力补偿将采用矩阵控制技术。     

High power λ～8.5 μm quantum cascade laser grown by MOCVD operating continuous-wave up to 408 K

Robust quantum cascade laser(QCL)enduring high temperature continuous-wave(CW)operation is of critical import-ance for some applications.We report on the realization of lattice-matched InGaAs/lnAIAs/InP QCL materials grown by metal-organic chemical vapor deposition(MOCVD).High interface quality structures designed for light emission at 8.5μmare achieved by optimizing and precise controlling of growth conditions.A CW output power of 1.04 W at 288 K was obtained from a 4 mm-long and 10 μm-wide coated laser.Corresponding maximum wall-plug efficiency and threshold current density were 7.1％and 1.18 kA/cm2,respectively.The device can operate in CW mode up to 408 K with an output power of 160 mW.     

受激布里渊散射(SBS)中的三类介质

介绍了目前使用的三类受激布里渊散射介质的化学结构及其SBS性能．并且分析了受激布里渊散射对介质的要求，     

The substituent effect on charge transport property of triisopropylsilylethynyl anthracene derivatives

The charge transport property of two triisopropylsilylethynyl anthracene (TIPSAnt) derivatives TIPSAntBt and TIPSAntNa (bithiophene and naphthalene are introduced at the 2, 6-positions of the TIPSAnt core) were explored through quantum chemical method. To gain a better understanding of the substituent effect on the charge transport property, the results of the parent molecule TIPSAnt was also provided here for comparison. The substituent effect on the molecular geometry, reorganization energy, frontier orbitals, ionization potential (IP) and electronic affinity (EA), crystal property, transfer integrals and charge mobility, band structure and effective mass of the two compounds were investigated to establish the relationship between structures and properties. The introduced bulky TIPS groups made the two compounds adopt two-dimensional, face-to-face, π-stacking structures. The efficient overlaps of π-orbital and smaller π-stacking distance are proved to be the main reason for the high charge mobility of TIPSAntBt and TIPSAntNa. The hole mobilities of TIPSAntBt and TIPSAntNa are 0.88 and 3.60 cm² V⁻¹ s⁻¹, respectively, which is well consistent with experiment values (0.2 and 3.7 cm² V⁻¹ s⁻¹, respectively). For TIPSAntBt, the electron mobility (1.29 cm² V⁻¹ s⁻¹) is a little higher than that of hole due to the more effective transfer integrals of electron. On the contrary, the hole mobility of TIPSAntNa is 20 times larger than that of electron because of the smaller reorganization energy and larger transfer integral of hole, indicating that TIPSAntNa could be used as p-type semiconductor. For TIPSAntBt, the transfer integral is smaller than the reorganization energy, so the hopping mechanism plays a key role in the charge transport property. While the bandwidths and effective mass of TIPSAntNa agreed well with the calculated transfer integrals and charge mobility results. The introduced small substituents to TIPSAnt core contributed to the dramatically different charge transport property from an n-type semiconductor of TIPSAntBt to p-type semiconductor of TIPSAntNa, which shed light on molecular design for an n-type semiconductor through simple chemical structural modification.     

氮氧化硅薄膜红外吸收特性的研究

利用等离子体增强化学气相沉积法沉积氮氧化硅(SiOxNy)薄膜,通过X射线光电子能谱仪、傅里叶变换红外光谱仪、椭偏仪等表征技术,研究不同N2O与NH3流量比R条件下薄膜的组分、光学常数及红外吸收特性.研究结果表明:随着流量比R的增加,SiOxNy薄膜中O的相对百分含量提高,N含量降低,而Si含量基本不变;薄膜由于Si-...     

Multilevel metal interconnection utilizing CVD tungsten and liftoff processing

Interconnections between semiconductor devices in integrated circuits continue to present difficult problems in the tradeoffs between RC time constants, production worthiness, reliability, structural complexity, and compactibility for any single technology. A process and structure has been demonstrated for integrated circuit interconnections which uses a conformai tungsten layer deposited by chemical vapor deposition to provide step coverage into via holes of variable height. The film is then patterned with a via interconnect pattern designed for liftoff processing, layers of chromium copper and chromium are then depositedinsitu on the wafers by way of evaporation. The undesired material is lifted off in a solvent process and the resulting metal pattern is used as the mask for the reactive ion etching of CVD tungsten. This combination of materials and process allows for high conductivity reliable interconnections with negligable step coverage problems. Processing and test information will be presented in the paper.     

氙离子注入氯化钠晶体零声子跃迁和化学位移

经 36 ke V Xe+注入 ,可在 Na Cl晶体表面产生 F、R1 、R2 和 M等色心。在 10 K温度下的吸收光谱中观测到位于 6 32 .1nm波长处的 R2 色心的零声子线 ,并在不同温度下对零声子线的光谱特性和热稳定性进行了研究。利用 NMR方法 ,首次观测到经 Xe+ ,注入 Na Cl晶体中 2 3 Na的化学位移。经 Xe+ 注入的 Na Cl晶体中 2 3 Na相对于未注入 Na Cl晶体中 2 3 Na的化学位移为 17× 10 - 6 ,预示 Xe+注入的 Na Cl晶体中固态 Na Xe分子的形成。     

Chemical vapor deposition synthesis of self-aligned carbon nanotube arrays

A procedure for producing arrays of self-aligned carbon nanotubes (CNTs) using standard chemical vapor deposition (CVD) is reported. Using UV photolithography, silicon substrates are patterned with a thin layer of thermally evaporated iron as a CNT catalyst. The CVD synthesis was carried out over a small temperature range (700°C–800°C) using acetylene and methane gasses, producing aligned CNT towers. Scanning electron microscopy (SEM) analysis shows a relationship between CNT tower height and synthesis time. Additionally, results show that impurity particles dramatically effect CNT tower growth. These results indicate that aligned CNTs can be produced in a desired pattern with height control.