In-situ synthesis of TiO2 nanostructures on Ti foil for enhanced and stable photocatalytic performance

TiO_2 nanostructures with strong interfacial adhesion and diverse morphologies have been in-situ grown on Ti foil substrate through a multiple-step method based on conventional plasma electrolytic oxidation(PEO) technology, hydrothermal reaction and ion exchange process. The PEO process is critical to the formation of TiO_2 seeding layer for the nucleation of Na_2Ti_3O_7 and H_2Ti_3O_7 mediates that are strongly attached to the Ti foil. An ion exchange reaction can finally lead to the formation of H_2Ti_3O_7 nanostructures with diverse morphologies and the calcination process can turn the H_2Ti_3O_7 nanostructures into TiO_2 nanostructures with enhanced crystallinity. The morphology of the TiO_2 nanostructures including nanoparticles(NP), nanowhiskers(NWK), nanowires(NW) and nanosheets(NS) can be easily tailored by controlling the NaOH concentration and reaction time during hydrothermal process. The morphology, composition and optical properties of TiO_2 photocatalysts were analyzed using scanning electron microscope(SEM), X-ray diffraction(XRD), photoluminescence(PL) spectroscopy and UV–vis absorption spectrum. Photocatalytic tests indicate that the TiO_2 nanosheets calcined at 500?C show good crystallization and the best capability of decomposing organic pollutants. The decoration of Ag cocatalyst can further improve the photocatalytic performance of the TiO_2 nanosheets as a result of the enhanced charger separation efficiency. Cyclic photocatalytic test using TiO_2 nanostructures grown on Ti foil substrate demonstrates the superior stability in the photodegradation of organic pollutant, suggesting the promising potential of in-situ growth technology for industrial application.     

全固态裸露式Ag／AgCl参比电极的研制及应用

该文报道了一种树脂接界全固态裸露式Ag／Agcl参比电极,勿需电镀氯化,制备工艺简单,性能稳定,是对电解型Ag／AgCl参比电极的一大改进。可代替饱和甘汞电极作为通用型参比电极,同时可减少汞对环境所造成的二次污染,在温度大于75℃时仍能保持良好性能,突破了甘汞电极的局限。     

The structure and properties of Ag(Nb0.8Ta0.2)O3 ceramic doped with MnNb2O6

The influences of doping of MnNb2O6 on the structure and dielectric properties of Ag(Nb0.8Ta0.2)O3 were illustrated. Ag(Nb0.8Ta0.2)O3 samples doped with different amount of preformed MnNb2O6 (1 mol%, 2 mol%, 3 mol%, 4 mol%, 6 mol%, 8 mol%) were prepared by traditional solid-state reaction method and characterized by XRD, SEM and EDS, and the dielectric properties of samples were compared. The experiment results indicated that when the doping amount of MnNb2O6 was greater than 3 mol%, second phase appeared because of the solid solution limit. The permittivity of the Ag(Nb0.8Ta0.2)O3 samples doped with MnNb2O6 firstly increased and then decreased with the sintering temperature, while the dielectric loss decreased first, and then increased slightly. 1 100 ℃ seems to be the most proper sintering temperature for most of the samples. When the amount of MnNb2O6 is about 3 mol%, the samples have the best dielectric properties, larger permittivity and smaller dielectric loss.     

基于FDTD的三角形银纳米颗粒阵列等离子共振吸收特性的模拟

利用时域有限差分法,数值模拟了银纳米三角阵列的等离子共振吸收特性,仿真计算了银纳米颗粒尺寸大小对阵列等离子体共振的影响.数值计算结果表明,三角形银纳米颗粒阵列的等离子共振吸收峰随颗粒尺寸的增大而红移,可通过改变颗粒大小调节共振吸收波长数值以用于不同的应用研究.基于FDTD理论模拟的计算结果与实验规律基本相符,并较好地阐释了银纳米三角有序阵列表面等离子共振吸收峰的频移与其纳米粒子长径比之间的一些依赖关系,此结论将有利于纳米光传感器应用的进一步探索研究.     

Ag_2Se/Se/SiO_2纳米复合物的制备及其光电性质

通过两步法成功合成了Ag2Se/Se/SiO2纳米复合物。首先采用Na2SiO3和Na2SeSO3为反应物,制得纳米Se/SiO2前驱物,然后将前驱物与AgNO3反应制得产物。讨论了产物的形成机理,利用TEM、XRD、UV-vis、FT-IR、LRS、PL等方法对产物进行了表征,并对产物的电化学和电致发光特性进行了研究。结果表明,产物有一定的电化学活性,并有较好的电致发光行为。     

掺银对TIBaCaCuO系超导体性能的影响

本文研究了掺入适量的银对TlBaCaCuO系超导体超导性能的影响。实验结果表明,当银的掺入量不超过0.3mol时,有利于2223相的形成;在掺入0.3mol银的同时,适当提高组成中Tl或Cu的含量,可以降低烧结温度,并能获得T_(o0)=122K,T_(onset)=136K的TlBaCaCuO系超导体。     

结核分枝杆菌融合抗原Ag85B-ESAT6真核表达载体的构建及鉴定

以结核分枝杆菌H37Rv株的基因组作为模板,将Ag85B和ESAT6编码基因进行PCR扩增,然后采用基因剪接重叠扩增PCR法(gene SOEing)将其通过疏水甘氨酸接头(GGIGIAPG)连接融合,定向克隆至质粒Pvax1中,构建结核分枝杆菌Ag85B-ESAT6融合抗原的真核表达质粒Pvax1/AE.经单双限制性内切酶图谱、PCR产物及DNA测序分析等多种方法鉴定,证实Pvax1/AE真核表达质粒构建成功.为进一步研究其结核核酸疫苗原型的免疫保护效果奠定了基础.     

Sensitivity enhancement for H2 gas detection using a SnO2–Ag2O–PdOx nanocrystalline system

Thick film H₂ sensors were fabricated using SnO₂ loaded with Ag₂O and PdO_x. The composition that gave highest sensitivity for H₂ was in the wt.% ratio of SnO₂:Ag₂O:PdO_x as 93:5:2. The nano-crystalline powders of SnO₂–Ag₂O–PdO_x composites synthesized by sol–gel method were screen printed on alumina substrates. Fabricated sensors were tested against gases like H₂, CH₄, C₃H₈, C₂H₅OH and SO₂. The composite material was found sensitive against H₂ at the working temperature 125 °C, with minor interference of other gases. H₂ gas as low as 100 ppm can be detected by the present fabricated sensors. It was found that the sensors based on SnO₂–Ag₂O–PdO_x nanocrystalline system exhibited high performance, high selectivity and very short response time to H₂ at ppm level. These characteristics make the sensor to be a promising candidate for detecting low concentrations of H₂.