合成鱼骨外形氮化镓纳米棒

通过氨化射频溅射工艺生长 Ga2 O3薄膜 ,在石英衬底上成功地合成了六方 Ga N纳米棒 .用 X射线衍射(XRD)、扫描电镜 (SEM)、高分辨率透射电镜 (HRTEM)和光致发光光谱 (PL)对生成的产物进行了分析 .合成的纳米棒中有部分一维线状结构表面有规则的突起 ,呈现鱼骨外形 .这种具有青鱼骨外形的纳米棒由六方单晶 Ga N纳米晶粒沿轴向错落排列而成 .室温下观察到 Ga N纳米棒的黄光发射峰发生了大尺度的蓝移     

Influence of initial morphology and thickness of Cu<Subscript>6</Subscript>Sn<Subscript>5</Subscript> and Cu<Subscript>3</Subscript>Sn intermetallics on growth and evolution during thermal aging of Sn-Ag solder/Cu joints

Intermetallic-layer formation and growth in Pb-free solder joints, during solder reflow or subsequent aging, has a significant effect on the thermal and mechanical behavior of solder joints. In this study, the influence of initial intermetallic morphology on growth rate, and kinetics were examined in a Sn-3.5Ag solder reflowed on Cu. The initial morphology of the intermetallic was tailered by cooling in water, air, or furnace conditions. Solder aging was conducted at 100°C, 140°C, and 175°C and aged for 0–1,000 h. Cooling rate, aging temperature, and aging time played an important role on microstructure evolution and growth kinetics of Cu₆Sn₅ (η) and Cu₃Sn (ɛ) intermetallic layers. Prior to aging, faster cooling rates resulted in a relatively planar Cu₆Sn₅ layer, while a nodular Cu₆Sn₅ morphology was present for slower cooling. Intermetallic-growth rate measurements after aging at various times, indicated a mixed growth mechanism of grain-boundary and bulk diffusion. These mechanisms are discussed in terms of the initial intermetallic thickness and morphology controlled by cooling rate, diffusion kinetics, and the competition between Cu₆Sn₅ and Cu₃Sn growth.     

CO-free hydrogen production by steam reforming of acetic acid carried out in a Pd–Ag membrane reactor: The effect of co-current and counter-current mode

In this experimental work, a dense tubular Pd–Ag membrane reactor is used for carrying out the acetic acid steam reforming reaction for producing a CO-free hydrogen stream. The influence of the different flow configurations, as well as the sweep factor and the reaction pressure is analysed. A Ni-based commercial catalyst was packed in the lumen side of the membrane reactor and the experimental tests were performed at a reaction temperature of 400 °C and at a H₂O/acetic acid feed molar ratio of 10/1. Results in terms of CO-free hydrogen recovery, hydrogen yield and products selectivities are proposed. Moreover, a comparison between the performances of the membrane reactor and a traditional reactor working at the same operative conditions is illustrated and discussed.     

碳化硅纳米晶须的制备研究进展

介绍了制备SiC纳米晶须的方法,包括:固相碳源法(电弧放电,电阻加热蒸发,SiOx薄膜生长及CNTS受限反应法),液相碳源法(sol-gel),及气相碳源法(浮动催化剂法,Fe纳米薄膜催化法)等。分析了各种方法的特点及存在的问题。对制备SiC纳米晶须的前景与发展方向进行了评述。     

Using a Brush Copolymer as Efficient Dispersant for the Preparation of Highly Stabilized Ag Nanoparticles in Aqueous Suspensions

Silver (Ag) nanoparticle has extremely high surface energy and it is difficult to find an efficient dispersant to prevent its agglomeration in suspensions. A new brush copolymer, succinic anhydride modified epoxy-amine poly[(propylene oxide)-co-(ethylene oxide)]-grafted polymer (EPOA), which can efficiently disperse concentrated aqueous suspensions of Ag nanoparticles is revealed. The dispersion efficiency of EPOA for the dispersion of a 60 nm-Ag nanoparticles in aqueous suspension is studied by measuring its sedimentation and rheological behavior, and the results are compared with those of a commercially available dispersant, ammonium poly(acrylic acid) (PAA-NH₄). Interactions between the dispersants and the Ag nanoparticles are characterized by zeta potential and adsorption analyses. Theoretical calculations are conducted to clarify the adsorption and the dominant dispersion stabilization mechanisms of the dispersants. Compared with PAA-NH₄, EPOA obtains a higher stable suspension of Ag nanoparticles with less significant sedimentation over 1 month. The dispersion homogeneity of the suspension remains excellent even at an extremely high solid loading of 30–40 wt%. According to adsorption analysis, it is suggested that both EPOA and PAA-NH₄ adsorb via single-point attachment through the carboxyl group on the Ag surface. Based on theoretical calculations, the Ag nanoparticles are better stabilized by EPOA via an electrosteric dispersion mechanism.     

Smooth and highly-crystalline Ag-doped CIGS films sputtered from quaternary ceramic targets

Sputtering with copper indium gallium selenide (CIGS) ceramic targets could produce smooth CIGS thin films that are preferred for preparing two-terminal tandem devices. However, grain sizes prepared in this way are small and device efficiency was low. To increase the grain size, in this report, an Ag layer was pre-sputtered beneath CIGS. The Ag doping layer increased the grain size and improved the crystalline alignment. Consequently, the Ag-doped films exhibited improved charge mobility. From X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy characterizations, we obtained an optimized Ag thickness of 15 nm. Short-circuit current density (J_SC), open-circuit voltage (V_OC), and fill factor (FF) were all improved after doping with 15-nm Ag. Increasing the annealing temperature from 550 °C to 575 °C, the grains was enlarged further, with the power conversion efficiency (PCE) increasing to 14.33% and V_OC to 545 mV. Upon the smooth CIGS film, a thin conformal perovskite layer was fabricated without polishing. This work demonstrates a simple way to fabricate smooth and highly-crystalline CIGS films that can be used for tandem solar cells.     

Defects mediated enhanced catalytic and humidity sensing performance in ceria nanorods

The content of defects and manipulation of oxygen vacancies in ceria (CeO₂) nanomaterials through doping have been widely used as effective strategies to rationally control its reactivity for diverse applications. In this work, a facile and simple fabrication method of CeO₂ nanorod crystals is demonstrated where; defects content and oxygen vacancies were tailored by doping with transition metal (Iron, Fe) ions. The effect of Fe-doping level (Ce_0.95Fe_0.05O₂ and %, Ce_0.9Fe_0.1O₂) on the structural, morphological, and optical properties of ceria nanorods was explored in detail. Undoped and Fe-doped CeO₂ nanorods were further explored for their use in photocatalytic activity and humidity sensing applications. The results revealed superior photocatalytic activity of Ce_0.9Fe_0.1O₂ by showing about 90% degradation of organic dye within 80 min of reaction time. Further, the same sample demonstrated excellent humidity sensing capabilities with faster response (~19 s) and recovery rate (~ 49 s) at 100% humidity conditions than other investigated samples. This work presents a systematic study on the fluencies of Fe doping in CeO₂ nanorod crystals to better understand the role of oxygen vacancies for tailoring their structural and optical properties for proficient environmental and sensing applications.     

Mechanisms for interfacial reactions between liquid Sn-3.5Ag solders and cu substrates

Intermetallic compounds formed during the soldering reactions between Sn-3.5Ag and Cu at temperatures ranging from 250°C to 375°C are investigated. The results indicate that scallop-shaped η-Cu₆(Sn_0.933 Ag_0.007)₅ intermetallics grow from the Sn-3.5Ag/Cu interface toward the solder matrix accompanied by Cu dissolution. Following prolonged or higher temperature reactions, ɛ-Cu₃ (Sn_0.996 Ag_0.004) intermetallic layers appear behind the Cu₆(Sn_0.933 Ag_0.007)₅ scallops. The growth of these interfacial intermetallics is governed by a kinetic relation: ΔX=tⁿ, where the n values for η and ɛ intermetallics are 0.75 and 0.96, respectively. The mechanisms for such nonparabolic growth of interfacial intermetallics during the liquid/solid reactions between Sn-3.5Ag solders and Cu substrates are probed.     

Ag/SnO2电接触材料的制备及烧结条件对密度的影响

以AgNO3和Sn(Ⅳ)盐为原料,采用水热还原法合成了银氧化锡(Ag/SnO2)复合粉体.复合粉体经压片、烧结制得片状Ag/SnO2电接触材料.通过XRD和SEM等手段对制得的Ag/SnO2复合粉体进行表征,系统考察了烧结时间、烧结温度、SnO2含量等因素对Ag/SnO2电接触材料密度的影响.结果表明,所得Ag/SnO2粉体为高度分散的球形颗粒; Ag/SnO2粉体经压片后,于750℃烧结3h所得电接触材料的密度最大;且材料的相对密度随其中SnO2含量的增加而略有降低,当SnO2含量在8%～16%(质量分数)之间时,所得Ag/SnO2电接触材料的相对密度均达到了97%以上.