PECVD生长nc-Si∶H膜的沉积机理分析

nc-Si∶H膜具有显著不同于α-Si∶H与μc-Si∶H膜的新颖结构与物性。从热力学反应的基元过程出发，定性地分析了本征nc-Si∶H与掺磷nc-Si(P)∶H膜的沉积机理，并提出了进一步改善膜层质量的新途径     

退火热处理对TA15钛合金组织性能的影响

研究了不同的退火热处理制度对TA15钛合金显微组织、室温拉伸性能、高温拉伸性能、室温冲击韧性及硬度的影响。结果表明：在相变点以上温度退火,合金具有较高的室温、高温强度,但室温塑性、高温塑性、室温冲击韧性较低;在相变点以下温度退火,合金的室温、高温断裂强度在860℃退火时出现峰值,而室温塑性、高温断面收缩率和室温冲击韧性则随着退火温度的升高而提高;同单重退火相比,双重退火、三重退火对提高合金性能的作用不大。     

Effect of annealing on tensile properties of electrodeposited nanocrystalline Ni with broad grain size distribution

Abstract

The microstructures and tensile properties of electrodeposited nanocrystalline Ni (nc-Ni) with a broad grain size distribution after annealing at 150, 200 and 300°C for 500 s were investigated. The as deposited broad grain size distribution nc-Ni sample exhibited a moderate strength σ_UTS of ～1107 MPa but a markedly enhanced ductility ?_TEF of ～10%, compared with electrodeposited nc-Ni with a narrow grain size distribution. Annealing below 200°C increased the strength but caused a considerably reduction in tensile elongation. This behaviour is attributed to the grain boundary relaxation and the increased order of grain boundaries after annealing, which can make the grain boundary activities, such as the grain boundary sliding and grain rotations, more difficult. Further annealing at 300°C decreased both the yield strength and tensile elongation significantly due to significant grain growth.     

改进的模拟退火算法在板式家具工业优化下料问题中的应用

讨论了如何利用改进的模拟退火算法即单调升温的模拟退火算法求解板式家具生产中的优化下料问题。在对问题进行数学描述的基础上，给出了算法求解的关键步骤和方法；讨论了单调升温模拟退火算法中如何跳出局部最优解，以及升温幅值的确定方法。实例表明该算法优化速度快，效率高，能有效解决大规模矩形件优化下料问题。     

EDA软件中的布局优化算法分析及其改进

在深亚微米、超深亚微米工艺水平下的超大规模集成电路设计需要高性能的EDA(电子设计自动化,ElectricalDesignAutomation)软件的支持。与物理设计相关的布图设计中,布局设计是一个极为重要的环节。该文以FPGA(现场可编程门电路,FieldProgrammableGateArray)为例,分析和介绍了EDA中的布局算法,然后利用遗传模拟退火算法对原算法提出了改进,并在文章中介绍了改进后的算法。     

基于退火遗传算法的单元测试方法

为提高单元测试的效率,提出一种基于退火遗传算法的自动化单元测试方法。将遗传算子与进化代数进行关联,使其更快收敛于最优解。采用基于分支距离的方法构造适应值函数,根据代码转换功能,将判定结点处的代码转换为平行结构、将分支距离量化为[0, 1]之间的数。实验结果表明,该方法能以更短的时间获得更高的代码覆盖率。     

GaP高能重离子辐照损伤及退火的正电子湮没研究

用正电子湮没寿命技术研究２．４＊１０＾１５／ｃｍ＾２和２．２＊１０＾１６／ｃｍ＾２ ８５ＭｅＶ＾１９Ｆ离子辐照ＧａＰ的辐照损伤及其退火效应。结果表明,高低两种注量辐照在ＧａＰ中产生浓度较高的单空位。在３００－１０２３Ｋ温度范围内测量了正电子湮没寿命温度的变化。低注量辐照品在退火过程中有双空位的形成;而高注量辐照样品中观察到比双空位更复杂的缺陷形式,其完全被退火的温度比低剂量辐照的高２５０Ｋ。     

Model GC1312S Multifunction Integrated Optical Circuit Devices

Model GC1312S multifunction integrated optical circuit device (MIOC) used in inertial-grade interferometric fiber optics gyroscopes(IFOGs) is fabricated by annealing and proton exchange process(APE) 。The unique feature of the device is the incorporation of the beat detection circuit besides all the features the conventional single Y-branch multifunction integrated optical circuit devices have.The device structure ,operation principle and typical characteristics, etc, are briefly presented in this paper.     

Effect of annealing conditions on the uniformity of undoped Semi-Insulating InP

Recently, it was found that undoped semi-insulating InP can be obtained by highpressure annealing of high purity materials. The reproducibility and the uniformity was, however, not satisfactory. In the present work, we found that not only Fe concentrations but also Cr and Ni concentrations in annealed wafers were slightly increased during annealing. Since it seems that the origin of the contamination was due to the vapor source of red phosphorus, conductive InP with a trace amount of Fe was annealed under low phosphorus vapor pressure in order to reduce the contamination. By preventing the contamination of Cr and Ni, preparation of semi-insulating InP became highly reproducible. The minimum Fe concentration for realizing semi-insulating InP was found to be 1 x 10¹⁵cm⁻³. It was also found that the better resistivity uniformity can be obtained at higher annealing temperatures.     

Luminescent Properties of Nanometer Si with Embedded Structure

Blue luminescence at about 431nm is obtained from epitaxial silicon after C^ implantation,annealing in hydrogen ambience and chemical etching sequentially. When annealed in nitrogen ambience and etched accordingly, there is a much narrower peak at about 430nm. During C^ implantation,C=O compounds are introduced into and embedded in the surface of nanometer Si formed during annealing,at last, nanometer silicon with embedded structure is formed,which contributes to the blue emission.