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51.
nc-Si∶H膜具有显著不同于α-Si∶H与μc-Si∶H膜的新颖结构与物性。从热力学反应的基元过程出发,定性地分析了本征nc-Si∶H与掺磷nc-Si(P)∶H膜的沉积机理,并提出了进一步改善膜层质量的新途径 相似文献
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《Materials Science & Technology》2013,29(12):1793-1797
AbstractThe microstructures and tensile properties of electrodeposited nanocrystalline Ni (nc-Ni) with a broad grain size distribution after annealing at 150, 200 and 300°C for 500 s were investigated. The as deposited broad grain size distribution nc-Ni sample exhibited a moderate strength σUTS of ~1107 MPa but a markedly enhanced ductility ?TEF of ~10%, compared with electrodeposited nc-Ni with a narrow grain size distribution. Annealing below 200°C increased the strength but caused a considerably reduction in tensile elongation. This behaviour is attributed to the grain boundary relaxation and the increased order of grain boundaries after annealing, which can make the grain boundary activities, such as the grain boundary sliding and grain rotations, more difficult. Further annealing at 300°C decreased both the yield strength and tensile elongation significantly due to significant grain growth. 相似文献
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在深亚微米、超深亚微米工艺水平下的超大规模集成电路设计需要高性能的EDA(电子设计自动化,ElectricalDesignAutomation)软件的支持。与物理设计相关的布图设计中,布局设计是一个极为重要的环节。该文以FPGA(现场可编程门电路,FieldProgrammableGateArray)为例,分析和介绍了EDA中的布局算法,然后利用遗传模拟退火算法对原算法提出了改进,并在文章中介绍了改进后的算法。 相似文献
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Model GC1312S multifunction integrated optical circuit device (MIOC) used in inertial-grade interferometric fiber optics gyroscopes(IFOGs) is fabricated by annealing and proton exchange process(APE) 。The unique feature of the device is the incorporation of the beat detection circuit besides all the features the conventional single Y-branch multifunction integrated optical circuit devices have.The device structure ,operation principle and typical characteristics, etc, are briefly presented in this paper. 相似文献
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K. Kainosho M. Ohta M. Uchida M. Nakamura O. Oda 《Journal of Electronic Materials》1996,25(3):353-356
Recently, it was found that undoped semi-insulating InP can be obtained by highpressure annealing of high purity materials.
The reproducibility and the uniformity was, however, not satisfactory. In the present work, we found that not only Fe concentrations
but also Cr and Ni concentrations in annealed wafers were slightly increased during annealing. Since it seems that the origin
of the contamination was due to the vapor source of red phosphorus, conductive InP with a trace amount of Fe was annealed
under low phosphorus vapor pressure in order to reduce the contamination. By preventing the contamination of Cr and Ni, preparation
of semi-insulating InP became highly reproducible. The minimum Fe concentration for realizing semi-insulating InP was found
to be 1 x 1015cm−3. It was also found that the better resistivity uniformity can be obtained at higher annealing temperatures. 相似文献
60.
LIZhong XINHua-mei WANGQiang LIYu-guo LIHui-qi 《半导体光子学与技术》2004,10(1):38-40
Blue luminescence at about 431nm is obtained from epitaxial silicon after C^ implantation,annealing in hydrogen ambience and chemical etching sequentially. When annealed in nitrogen ambience and etched accordingly, there is a much narrower peak at about 430nm. During C^ implantation,C=O compounds are introduced into and embedded in the surface of nanometer Si formed during annealing,at last, nanometer silicon with embedded structure is formed,which contributes to the blue emission. 相似文献