ITO薄膜制备及RTA处理对发光器件特性的影响

采用射频反应磁控溅射生长铟锡氧化物(ITO)薄膜,通过X射线衍射(XRD)、透射光谱、四探针法及原子力显微镜(AFM)研究了生长条件、快速热退火(RTA)温度等对薄膜的晶化、透过率、电导率以及表面形貌的影响.以ITO/NPB/AlQ/Al结构的器件为例,讨论了不同的制备条件下ITO薄膜的表面效应对电致发光(EL)的影响,通过EL光谱表征发现,对ITO退火处理后,器件的相对发光强度明显增加,衰减速度减慢,器件的EL光谱有明显的变化.通过进一步分析认为,这是由于ITO薄膜表面的变化引起功函数的改变,从而引起电场重新分布造成的.     

透明挠性基板“SPET”

概述了由PET,高耐热树脂和铜箔组成的透明挠性基板“SPET”的开发,生产,特征和应用以及今后的展开.     

Characterization of copper grain growth limitations inside narrow wires depending of overburden thickness

With the downscaling of feature dimensions, copper interconnects exhibit properties differing from bulk or film material. Resistivity increases and limits electrical performances, and reliability of interconnects becomes a more important challenge for each new technological node. In this study, we present an approach of copper grain growth control inside narrow wires by adding a step between the copper electro-chemical deposition (ECD) and the chemical-mechanical polishing (CMP). This step corresponds to a partial CMP step (pre-CMP) and is applied after ECD and before anneal in order to modify the copper overburden thickness. Depending on the targeted thickness, copper grain growth occurs during anneal with different efficiencies. Crystallization and grain growth behaviour inside wires is investigated with focused ions beam (FIB). We present here our methodology for sample preparation and characterization. Results are focused on electrical variations and on morphological aspects of copper crystallization and grain growth inside lines observed with various overburden thicknesses.     

Indium and tin oxide nanowires by vapor-liquid-solid growth technique

Regular three-dimensional (3-D) arrays of crystalline SnO₂-In₂O₃ nanowires were produced on m-sapphire using a gold catalyst-assisted vapor-liquid-solid growth process. The growth characteristics at multiple growth conditions were analyzed using scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED), x-ray photoemission spectroscopy (XPS), and Rutherford backscattering spectroscopy (RBS) to evaluate the functional dependence of nanowire structure and composition on growth parameters such as temperature and source composition. The results indicate that nanowires of mixed composition are not possible from the catalytic clusters; rather, a mixture of indium and tin oxide wires are formed in the range of conditions investigated here.     

Application of an electron backscatter diffraction pattern to Cu damascene-fabricated interconnections filled by a high-pressure anneal process

The microstructure of Cu interconnections fabricated by high-pressure annealing was evaluated using a field emission scanning electron microscope/electron backscatter diffraction pattern (FE-SEM/EBSP) technique, and the results are compared with as-deposited and normally annealed Cu films. The results show some grains extending from the bulk field to the via regions in the case of the high-pressure annealed Cu films. The existence of via holes was also observed, in which all grains were (111) oriented. This indicates that the high-pressure annealing process enables the Cu that in-fills the via holes to develop into favorable microstructures, i.e., single-crystal and with (111) orientation.     

Metastable Copper‐Phthalocyanine Single‐Crystal Nanowires and Their Use in Fabricating High‐Performance Field‐Effect Transistors

This paper describes a simple, vapor‐phase route for the synthesis of metastable α‐phase copper‐phthalocyanine (CuPc) single‐crystal nanowires through control of the growth temperature. The influence of the growth temperature on the crystal structures, morphology, and size of the CuPc nanostructures is explored using X‐ray diffraction (XRD), optical absorption, and transmission electron microscopy (TEM). α‐CuPc nanowires are successfully incorporated as active semiconductors in field‐effect transistors (FETs). Single nanowire devices exhibit carrier mobilities and current on/off ratios as high as 0.4 cm² V^?1 s^?1 and >10⁴, respectively.     

双酚A型及苯酚型酚醛环氧树脂的对比研究

对比研究双酚A型酚醛环氧树脂(BPANE)与苯酚型酚醛环氧树脂(PNE)的反应动力学,及其在覆铜板中的应用性能。     

Recapillarity: Electrochemically Controlled Capillary Withdrawal of a Liquid Metal Alloy from Microchannels

This paper describes the mechanistic details of an electrochemical method to control the withdrawal of a liquid metal alloy, eutectic gallium indium (EGaIn), from microfluidic channels. EGaIn is one of several alloys of gallium that are liquid at room temperature and form a thin (nm scale) surface oxide that stabilizes the shape of the metal in microchannels. Applying a reductive potential to the metal removes the oxide in the presence of electrolyte and induces capillary behavior; we call this behavior “recapillarity” because of the importance of electrochemical reduction to the process. Recapillarity can repeatably toggle on and off capillary behavior by applying voltage, which is useful for controlling the withdrawal of metal from microchannels. This paper explores the mechanism of withdrawal and identifies the applied current as the key factor dictating the withdrawal velocity. Experimental observations suggest that this current may be necessary to reduce the oxide on the leading interface of the metal as well as the oxide sandwiched between the wall of the microchannel and the bulk liquid metal. The ability to control the shape and position of a metal using an applied voltage may prove useful for shape reconfigurable electronics, optics, transient circuits, and microfluidic components.     

短波红外纳米PbSe薄膜制备及光电性能研究

采用化学沉淀的方法在石英衬底上制备了短波红外纳米PbSe薄膜.XRD,SEM,TEM以及红外透射光谱测试分析结果表明,所制备的PbSe薄膜为纳米多晶薄膜,表面平整致密,薄膜的晶粒尺寸为10 nm左右,由于量子效应,薄膜吸收截止边相对PbSe体材料蓝移至1.6 μm;经过敏化、光刻及金属化制备了PbSe单元光导探测器,在...     

Effect of Bi doping on the properties of CdSe thin films for optoelectronic device applications

CdSe and Bi (1%, 2%, 3%) doped CdSe thin films were deposited on the glass substrates using thermal evaporation technique. Effect of Bi doping on the structural, optical, electrical and photo response properties of CdSe thin films were investigated. The X-ray diffraction studies reveals that undoped and Bi doped CdSe films are polycrystalline in nature with hexagonal crystal structure along (002) direction. No significant changes are observed in the lattice parameters or the grain size indicating minimum lattice distortion. The optical band gap of undoped CdSe film was estimated to be 1.67 eV. Replacement of cadmium by bismuth results in an increase in the electrical conductivity of doped films. Doping with bismuth is found to improve the photo sensitivity of CdSe thin films.