低温气相硅外延前氩微波等离子原位溅射清洗对薄膜界面的损伤

本文研究了在超高真空低温CVD（chemicalvapordeposition）硅外延中，ECR（electroncyclotronresonance）微波等离子原位溅射清洗对外延层界面损伤的情况。超高分辨透射电镜（TEM）照片表明，界面引起的损伤是较严重的，损伤层的宽度与衬底偏压的高低和溅射时间的长短直接相关。     

扇聚焦等时性回旋加速器性能的改进和提高

安装了ＥＣＲ离子源及其外注入系统后，增加了离子种类、提高了束流强度。扇聚焦等时性回旋加速器（ＳＦＣ）主要工作点分布于三次谐波加速区域，为了匹配外注入系统，仔细地研究了中心区，重新设计加工了Ｄ盒及假Ｄ。为了改进ＳＦＣ性能，提高运行效率，同时进行了其它改进工作。介绍了改进后的ＳＦＣ的调束工作。     

Characterization of tantalum oxy-nitrides deposited by ECR sputtering

We have investigated the electrical characteristics of tantalum oxy-nitride (TaON) films deposited using electron cyclotron resonance (ECR) plasma sputtering. A pure tantalum metal target was used as raw material combined with gases of oxygen and nitrogen. The electrical properties have been measured using metal-insulator-metal (MIM) structures of Al/TaON/Ru/Si or metal-insulator-semiconductor (MIS) structure of Al/TaON/Si. By controlling the oxygen gas flow in a moderate low gas flow rate at fixed nitrogen gas flow, TaON films have been stably obtained with the refractive indices of over 2.5 at 632.8 nm wavelength, and the dielectric constants of over 30. However, the leakage currents have increased with an increase in the dielectric constants. To improve the leakage current, we have investigated the periodical deposition process, in which the ECR plasma irradiation was additionally introduced after thin TaON film was deposited. The breakdown strength of about 1 MV/cm was obtained by the measurement using MIM structure. By the estimation of the C-V characteristics of the silicon-MIS structure using TaON, the dielectric constant of 34 was obtained for a TaON thickness of 12 nm.     

类金刚石薄膜的反应离子刻蚀

为了刻蚀出图形完整、侧壁陡直、失真度小、独立的类金刚石薄膜微器件,反应离子刻蚀是一种有效地刻蚀方法。研究了氧气与氩气的混合气体进行类金刚石薄膜刻蚀的主要工艺参数(刻蚀时间、有无掩膜、氩氧体积混合比、负偏压)。研究结果表明:在相同条件下,刻蚀速率随刻蚀时间变化不大;有无掩膜对刻蚀速率无明显影响;流量一定时,刻蚀速率随氩氧体积比的增大而降低,随负偏压的增大先增大后减小。实验得到最佳刻蚀条件,在此条件下,刻蚀出图形完整、侧壁陡直、失真度小的微器件,并成功制备出"独立"的微齿轮,进行了组装。     

Film Formation of Non-Phosphorus Wear Inhibitors

The time-dependent film formation of two potential non-phosphorus supplemental wear inhibitors in the presence of secondary zinc dialkyldithiophosphate (ZnDTP) was studied by electrical contact resistance (ECR), auger, and X-ray photoelectron (XPS) spectroscopy. One weight percent of a molybdenum dithiocarbamate or an ashless dithiocarbamate was blended with a secondary ZnDTP, sufficient in quantity to yield 0.05 wt% phosphorus at blend level. A thorough surface examination by auger and XPS, coupled with the ECR results, detailed the deleterious effects that these supplemental antiwear additives had on ZnDTP antiwear film formation. Both carbamates interfered with antiwear film formation by secondary ZnDTP. It is speculated that MoDTC generated a competing molybdenum sulfide film that oxidized over time to form MoO ₃ , which promotes wear in the ECR bench test based on literature insight. Ashless DTC also formed a competing antiwear film but not as good a film as from ZnDTP alone.     

Microwave ECR plasma CVD of cubic Y2O3 coatings and their characterization

Yttrium oxide (Y₂O₃) thin films are deposited by microwave electron cyclotron resonance (ECR) plasma assisted metal organic chemical vapour deposition (MOCVD) process at a substrate temperature of 350 °C using indigenously developed metal organic precursors (2,2,6,6-tetra methyl-3,5-heptane dionate) yttrium, commonly known as Y(thd)₃ synthesized by ultrasound method. The deposited coatings are characterized by X-ray photoelectron spectroscopy, glancing angle X-ray diffraction, scanning electron microscopy, EDS and infrared spectroscopy. The characterization results indicate that it is possible to deposit non-porous coatings with excellent uniformity of a single phase cubic Y₂O₃ on various substrates by this process at reasonably low substrate temperature that is desirable in various manufacturing processes.     

CIAE强流ECR离子源研制

本文介绍了研制的一台强流ECR微波离子源,其能从7 mm直径的圆孔引出大于150 mA的氢离子束(75 keV),质子比达90%。该离子源采用独特的结构提高了离子源寿命。离子源在75 keV、110 mA束流条件下连续工作超过220 h,束流中断2次,不间断工作时间超过150 h。     

Simulation of ECR Startup and Comparison with Experimental Observations in SUNIST

Transient process of ECR startup in SUNIST with a one-dimensional model is analyzed and simulated. Contributions from the generation, drift, diffusion and loss of electrons are taken into account in the model and estimated from experimental parameters, e.g., toroidal field, vertical field and gas filling pressure. Typical discharges are simulated with the conditions close to the experiomental ones. Both experimental and simulated results are comparable qualitatively in amplitudes and semi-quantitatively in time. From the results it is confirmed that the transient process of ECR startup in SUNIST is dominant, as preliminarily deduced from experimental observations, by a pair of exclusive factors, namely the absorption, due to gas ionization, and the reflection of microwave, caused by the shift of over dense plasmas due to outward E×B drift. In addition to these two factors, electron loss along the field line is also very important in determining the character of discharges.     

Analysis of the primary experimental results on a 5 cm diameter ECR ion thruster

An ECR ion thruster with a diameter of 5 cm has been developed and tested.Four different antenna positions were experimentally and numerically investigated,and the results suggest that the optimal location for the antenna is where it is perfectly surrounded by the electron cyclotron resonance layer.We also evaluated two different antenna configurations,and found that the star configuration is preferable to the circular configuration,and also that the circular antenna is only 40％ as efficient as the star antenna.The experimental curve of the ion beam current and voltage agrees with the fitting results from the analytic solution.The simulation of the magnetic topology in the discharging chamber with different back yoke heights indicates that it needs to be further verified.     

ECR离子源束流发射度测量系统设计

为了实现ECR离子源束流发射度的精确、可靠测量,同时实现将系统中不同设备的控制测量数据统一显示到操作界面,基于EPICS软件系统,开发完成了双狭缝电机运动控制和PXI板卡的数据采集的发射度测量系统。采用LabVIEW软件的DSC模块实现对束流流强的PV变量发布;基于StreamDevice开发了电机运动控制IOC程序。整套系统运行稳定可靠、使用方便,满足离子源束流发射度的测量要求。