One-dimensional spindle-like BiVO4/TiO2 nanofibers heterojunction nanocomposites with enhanced visible light photocatalytic activity

One-dimensional spindle-like BiVO₄/TiO₂ nanofibers heterojunction nanocomposites with high visible light photocatalytic activity have been successfully obtained by combining the electrospinning technique and solvothermal method. The as-obtained products were characterized by field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV–vis spectra and photoluminescence (PL) spectra. The results revealed that spindle-like BiVO₄ nanostructures were successfully grown on TiO₂ nanofibers. Photocatalytic tests showed that the BiVO₄/TiO₂ nanofibers heterojunction nanocomposites showed enhanced visible light photocatalytic activity than that of pure TiO₂ nanofibers, which might be attributed to the effective photogenerated electrons-holes separation based on the photosynergistic effect of the BiVO₄/TiO₂ heterojunction. Moreover, the BiVO₄/TiO₂ nanofibers heterojunction nanocomposites could be easily recycled without any decrease of the photocatalytic activity.     

Enhanced performance of γ-Fe2O3:WO3 nanocomposite towards selective acetone vapor detection

Metal oxide nanocomposite sensors based on γ-Fe₂O₃ and WO₃ were investigated in acetone vapor of various concentrations (1–100 ppm) at operating temperatures between 250 and 350 °C. The composites were prepared by simple solid state mixing and porous thick-film gas sensors were fabricated on alumina substrates. The γ-Fe₂O₃:WO₃ (50:50) nanocomposite showed a marked enhancement in sensing response down to 1 ppm acetone vapor detection at 300 °C. The response was ~2-fold better compared to pure WO₃ or pure γ-Fe₂O₃ with a very fast response (1 s) and very short recovery time (3 s). No appreciable sensitivity was observed towards alcohol vapor (an interfacing agent for diabetics) and in moisture (present in breath). The enhanced performance was due to n–n heterojunction effect.     

Performance of Silicon Heterojunction Photovoltaic modules in Qatar climatic conditions

We report on the performance of two cell technologies: Silicon Heterojunction (SHJ) and conventional diffused junction n-type mono-crystalline silicon Photovoltaic (PV) arrays, under a harsh environment condition with high temperature and dust accumulation, typical to Qatar. A comparison of the energy yield and Performance Ratio (PR) at plane of array global irradiance as well as module temperature (T_mod) of the two technologies is presented. The SHJ arrays showed a higher energy yield as compared with the conventional arrays thanks to the higher efficiency of the SHJ. The results showed also that dust accumulated on PV modules may cause a drop in the PR of up to approximately 15% if the module is not cleaned for one month. Scheduled module cleaning or raining will return the PR close to its initial value.     

The n-CdIn2Se4/p-CdTe heterojunction solar cells

The n-CdIn₂Se₄/p-CdTe heterojunction solar cells have been fabricated by deposition of n-CdIn₂Se₄ thin films using spray pyrolysis on to p-CdTe. Current density-voltage and capacitance-voltage measurements were performed to determine the electrical properties of the structures. The capacitance-voltage behavior indicates an abrupt interface. The junction quality factor (n), series and shunt resistance (R_s and R_sh), fill factor (FF) and efficiency (η) for the cell have been estimated. The device exhibit maximum fill factor (FF), power conversion efficiency (η) of about 0.55% and 0.67%.     

Nanocomposites of SnO2 and g-C3N4: Preparation,characterization and photocatalysis under visible LED irradiation

Tin dioxide nanoparticles were prepared in the presence of graphitized carbon nitride (g-C₃N₄) forming nanocomposites with different contents of SnO₂ up to 40 %. G-C₃N₄ was synthetized by heating of melamine at 550 °C in the open air and Sn²⁺ ions were precipitated by sodium hydroxide in g-C₃N₄ aqueous dispersions. Resulting mixtures were dried by freezing at ?20 °C and calcined at 450 °C to obtain SnO₂/g-C₃N₄ nanocomposites.The nanocomposites were characterized by common characterization methods in solid state and in their aqueous dispersions using dynamic light scattering (DLS) analysis and photocatalysis. SnO₂ nanoparticles in the nanocomposites were found to have an average size of 4 nm, however, those precipitated without g-C₃N₄ had an average size of 14 nm. Separation of photoinduced electron and holes via heterojunction between SnO₂ and g-C₃N₄ was demonstrated by photocatalytic decomposition of Rhodamine B (RhB) under LED visible irradiation (416 nm) and photocurrent measurements. The most photocatalytically active nanocomposite contained 10 % of SnO₂. Graphitized carbon nitride was assumed to serve as a template structure for the preparation of SnO₂ nanoparticles with a narrow size distribution without using any stabilizing additives.     

Building desired heterojunctions of semiconductor CdS nanowire and carbon nanotube via AAO template-based approach

Heterojunctions of CdS nanowire (CdSNW) and carbon nanotube (CNT) have been achieved in the nanochannels of anodic aluminum oxide (AAO) templates via sequentially electrodepositing CdSNWs and chemical vapor depositing CNTs. Transport measurements reveal that Ohmic-like behavior has been achieved, which may result from a very low energy barrier in the junction of CdSNW/CNT. Furthermore, three-segment heterostructures of CNT/CdSNW/CNT have also been obtained by adding a procedure of selectively etching part of the deposited CdSNWs before chemical vapor depositing CNTs. The approach could be exploited to build nanodevices and functional networks consisting of well-interconnected two- or three-segment nanoheterostructures.     

Growth of InGaN HBTs by MOCVD

The design and growth of GaN/InGaN heterojunction bipolar transistors (HBTs) by metalorganic chemical vapor deposition (MOCVD) are studied. Atomic-force microscopy (AFM) images of p⁺InGaN base layers (∼100 nm) deposited under various growth conditions indicate that the optimal growth temperature is limited to the range between 810 and 830°C due to a trade-off between surface roughness and indium incorporation. At these temperatures, the growth pressure must be kept above 300 Torr in order to keep surface pit density under control. An InGaN graded-composition emitter is adopted in order to reduce the number of V-shaped defects, which appear at the interface between GaN emitter and InGaN base and render an abrupt emitter-base heterojunction nearly impossible. However, the device performance is severely limited by the high p-type base contact resistance due to surface etching damage, which resulted from the emitter mesa etch.     

UHV/CVD生长本征硅外延层的研究

在微波双极型晶体管中,收集区的厚度是影响其截止频率的一个重要因素。普通的常压外延难以生长出杂质浓度变化陡峭的薄外延层。文章利用自行研制的超高真空化学气相淀积(UHV/CVD)系统SGE500,在N型(掺As)重掺杂衬底上进行了薄本征硅外延层生长规律的研究;并采用扩展电阻(SPR)、原子力显微镜(AFM)、双晶衍射(DCXRD)等方法,对外延层的质量进行了评价。采用该外延材料制作的锗硅异质结双极型晶体管(SiGe HBT)器件击穿特性良好。     

射频功率HBT自加热效应及补偿方法

从器件I-V特性的角度,表征了射频功率异质结双极晶体管(HBT)的自加热效应。研究了器件热阻、工作电压、电流增益、发射结价带不连续性(ΔEV)等诸多因素对器件I-V特性的影响。进而研究了为补偿自加热效应所加镇流电阻对热稳定性的改善情况,给出了器件热稳定所需最小镇流电阻(REmin)与这些因素的关系。结果表明,HBT的REmin要小于同质结双极晶体管(BJT)的REmin,因此,射频功率HBT将有更大的输出功率、功率增益和功率附加效率(PAE)。     

HBT MMIC功率放大器的自适应线性化偏置技术

设计HBT MMIC功率放大器,偏置电路的选择对于提高功率放大器的效率和线性度至关重要.为了在效率和线性度之间取得良好折中,一个重要的方法是让HBT的偏置点随输入信号的功率变化而变化.许多文献都对这种自适应偏置技术进行了研究,然而,对于多种自适应线性化偏置电路比较和分析的文章尚未见报道.本文综合叙述了适用于HBT MMIC工艺,尺寸小、成本低的多种自适应线性化偏置电路,总结了这些偏置电路的基本工作原理,并提出了一种改进的线性化偏置电路.