SiGe器件及其研究综述

阐述了ＳｉＧｅ器件的主要研究方向以及国内外对ＳｉＧｅ材料和器件的研究情况,并对ＳｉＧｅ器件与Ｓｉ器件和ＧａＡｓ器件的发展前景进行了比较。     

Applications of Secondary Electron Composition Contrast Imaging Method in Microstructure Studies on Heterojunction Semiconductor Devices and Multilayer Materials

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Fabrication and band structure of Ag3PO4–TiO2 heterojunction with enhanced photocatalytic hydrogen evolution

Ag₃PO₄ was deposited on TiO₂ by in-situ precipitation to fabricate Ag₃PO₄–TiO₂ heterojunction with different ratios of Ag₃PO₄. The electronic band structures of TiO₂ and Ag₃PO₄ were determined by means of ultraviolet photoelectron spectroscopy and UV–visible spectrometry. The Fermi levels of TiO₂ and Ag₃PO₄ were calculated to be −5.09 eV and −5.95 eV, respectively, and accordingly the energy band diagrams were constructed. The hydrogen production rates of bare TiO₂ and Ag₃PO₄–TiO₂ heterojunctions were measured under 300 W Xe lamp with a solar filter (AM 1.5). The heterojunction formed with 12 wt% Ag₃PO₄ showed the highest hydrogen evolution rate (44.5 μmol g⁻¹h⁻¹) which is 5.7 times higher than that of TiO₂. When Au nanoparticles were deposited on this heterojunction, it resulted in 10.2 times (453.0 μmol g⁻¹h⁻¹) further improvement of hydrogen generation. The hydrogen evolution performance is consistent with the result of photoluminescence analysis.     

Convex-nanorods of α-Fe2O3/CQDs heterojunction photoanode synthesized by a facile hydrothermal method for highly efficient water oxidation

Morphology controlling and surface modification of semiconductors is the key for efficient photoelectrochemical (PEC) water splitting systems. This work provides a new strategy for achieving morphology control and heterojunction construction simultaneously by one-step hydrothermal method. The α-Fe₂O₃/CQDs heterojunction photoanode with convex-nanorods morphology is successfully prepared by hydrothermal method in CQDs (Carbon Quantum Dots) aqueous contained iron precursor followed by low temperature annealing treatment. Compared with bare hematite photoanode, the α-Fe₂O₃/CQDs photoanode has 8.5 time higher photocurrent density (at 1.23 V vs. RHE) of 0.35 mA cm^?2 and a negative shift of onset potential about 300 mV. The enhanced photoelectrochemical response is attributed to the convex-nanorods which benefit higher absorbance of light and the formed α-Fe₂O₃/CQDs heterojunction, which can efficiently enhance the electron-hole separation and reduce the surface charge recombination. The morphology and properties of the sample were characterized with scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fouriertrans form infrared spectroscopy (FTIR), UV–vis spectra, X-ray diffractometry (XRD), X-ray photoelectron spectra (XPS), and photoelectrical measurements.     

Enhanced photoelectrochemical performance of 2D core-shell WO3/CuWO4 uniform heterojunction via in situ synthesis and modification of Co-Pi co-catalyst

In order to enhance the photoelectrochemical (PEC) performance of tungsten oxide (WO₃), it is critical to overcome the problems of narrow visible light absorption range and low carrier separation efficiency. In this work, we firstly prepared the 2D plate-like WO₃/CuWO₄ uniform core-shell heterojunction through in-situ synthesis method. After modification with the amorphous Co-Pi co-catalyst, the ternary uniform core-shell structure photoanode achieved a photocurrent of 1.4 mA/cm² at 1.23 V vs. RHE, which was about 6.67 and 1.75 times higher than that of pristine WO₃ and 2D uniform core-shell heterojunction, respectively. Furthermore, the onset potential of 2D WO₃/CuWO₄/Co-Pi core-shell heterojunction occurred a negatively shifts of about 20 mV. Experiments illuminated that the enhanced PEC performance of WO₃/CuWO₄/Co-Pi photoanode was attributed to the broader light absorption, reduced carrier transfer barrier and increased carrier separation efficiency. The work provides a strategy of maximizing the advantages of core-shell heterojunction and co-catalyst to achieve effective PEC performance.     

Photocatalytic hydrogen generation by WO3 in synergism with hematite-anatase heterojunction

The present study reports about exploration of a multi-component photocatalytic system comprising of WO₃, TiO₂ and Fe₂O₃ with tandem n-n heterojunctions. The ternary WO₃/TiO₂/Fe₂O₃ nanocomposite with WO₃ nanoparticles over the interfaces of Fe₂O₃ and TiO₂ is synthesized by wet precipitation followed by thermal decomposition. The WO₃/TiO₂/Fe₂O₃ nanocomposite has an enhanced photocatalytic performance towards hydrogen generation by water splitting reaction under visible light irradiation, when compared to the Fe₂O₃/TiO₂ system. A band gap of 2.10 eV, favouring visible light absorption was achieved with the distribution of WO₃ nanopartcles over the interfaces of Fe₂O₃ and TiO_2. The as prepared WTF heterojunction exhibited a maximum hydrogen production rate of 10.2 mL h⁻¹ for a catalyst loading of 0.025 g mL⁻¹. The enhanced photocatalytic performance is tested in presence of various sacrificial agents and proton source. In both cases, the higher photocatalytic efficiency is attributed to the more visible light harnessing ability and pronounced charge separation owing to the tandem n-n heterojunctions generated between TiO₂ with WO₃ and TiO₂ with Fe₂O₃ semiconductors and enhancing the lifetime of the photogenerated electron-hole pairs.     

RTD与HBT单片集成研究

设计并研制了共振隧穿二极管(RTD)与异质结双极晶体管(HBT)单片集成负阻逻辑单元。详细介绍了逻辑单元的材料结构及工艺流程的设计过程,得到了较好的负阻特性,其开启电压1V左右,峰谷比大于2∶1。同时建立了负阻逻辑单元的模型,通过Pspice模拟结果表明与实际逻辑单元特性吻合良好。     

Solid-phase epitaxy of undoped amorphous silicon by in-situ postannealing

The solid phase epitaxy (SPE) of undoped amorphous Si (a-Si) deposited on SiO₂ patterned Si(001) wafers by reduced pressure chemical vapor deposition (RPCVD) using a H₂-Si₂H₆ gas system was investigated. The SPE was performed by applying in-situ postannealing directly after deposition process. By transmission electron microscopy (TEM) and scanning electron microscopy, we studied the lateral SPE (L-SPE) length on sidewall and mask for various postannealing times, temperatures and a-Si thicknesses. We observed an increase in L-SPE growth for longer postannealing times, temperatures and larger Si thicknesses on mask. TEM defect studies revealed that by SPE crystallized epi-Si exhibits a higher defect density on the mask than at the inside of the mask window. By introducing SiO₂-cap on the sample with 180 nm Si thickness following postannealing at 570 °C for 5 h, the crystallization of up to 450 nm epi-Si from a-Si is achieved. We demonstrated the possibility to use this technique for SiGe:C heterojunction bipolar transistor (HBT) base layer stack to crystallize Si-buffer layer to widen the monocrystalline region around the bipolar window and to improve base link resistivity of the HBT.     

A facile dissolution strategy facilitated by H2SO4 to fabricate a 2D metal-free g-C3N4/rGO heterojunction for efficient photocatalytic H2 production

A 2D g-C₃N₄(pPCN)/rGO heterojunction for photocatalytic hydrogen production is fabricated by a facile dissolution strategy facilitated by H₂SO₄. The bulk g-C₃N₄ (CN) can be directly exfoliated into ultrathin protonated g-C₃N₄ (PCN) nanosheets under the assistance of H₂SO₄, and PCN can be further modified by rGO in a dissolved state under the electrostatic self-assembly process. The nanocomposite exhibits a large surface area (146.47 m²/g) and intimate contact interfaces between pPCN and rGO due to the specific synthesis method. Based on the DRS, PL and photoelectrochemical analyses, the introduction of rGO can greatly improve the light absorption and photogenerated charge carrier separation and transfer of g-C₃N₄. The optimal pPCN/2 wt% rGO nanocomposite shows an efficient photocatalytic H₂ evolution rate of 715 μmol g^?1 h^?1 under visible light irradiation, which is 2.6 and 13 times higher than those obtained on pPCN and CN. In addition, a photocatalytic mechanism over a 2D pPCN/rGO heterojunction is proposed. This work offers a new effective strategy for fascinating gC₃N₄based nanocomposites with promising hydrogen generation.