MIM零件连续烧结炉及其控制

金属粉末注射成型技术(Metal Injection Molding,简称MIM)是近年来在粉末冶金学科和工业中发展最迅猛的领域。主要论述应将传统脱脂、烧结乃至后处理等单一工序融合为综合工序的必要性,及连续烧结设备的结构与工件输送的控制系统设计的发展目标。     

Nanostructured solar cell based on spray pyrolysis deposited ZnO nanorod array

In this paper we present a realization of an extremely thin absorber (ETA) layer solar cell by the chemical spray pyrolysis method. CuInS₂ absorber was deposited onto a blocking layer coated ZnO nanorods grown on a transparent conductive oxide. Layers and cells were characterized by optical and Raman spectroscopy, and scanning electron microscopy. Current–voltage, spectral response and electron beam induced current measurements were applied to solar cells. ZnO nanorod cell showed twice higher short circuit current density than the flat reference. ETA cells with efficiency of 2.2% (j=12 mA/cm², V_oc=425 mV, FF=43%) and of 2.5% were prepared using TiO₂-anatase and an indium sulfide blocking layer, respectively.     

直接空冷机组喷雾增湿系统的研究

针对大型直接空冷机组在夏季出力受阻的问题,提出采用喷雾增湿系统,以有效降低空冷器入口空气温度,改善空冷器的换热效果,提高机组的运行真空,从而提高机组的出力.对喷雾增湿系统进行了优化设计、数值模拟研究和经济性分析,结果表明:采用喷雾增湿系统可明显提高直接空冷机组夏季出力,有利于提高机组运行的经济性和安全性,对直接空冷机组具有推广应用价值.     

对撞式喷嘴在模拟燃烧室内喷雾特性研究

为了研究对撞式喷嘴在燃烧室内的喷雾特性,采用三维相位多普勒粒子动态分析仪(PDA),测量了模拟燃烧室内对撞式喷嘴喷雾场参数的空间分布,分析了不同喷雾压力下雾化液滴的平均直径、轴向速度和径向速度的变化规律。结果表明:喷雾压力越大,液滴平均直径D30越小,正态分布特征越明显;随着喷雾向下游发展,液滴轴向速度分布向小速度偏移,喷雾压力越大,距离喷嘴较远的截面上,轴向速度损失越小;距离喷嘴越远,雾化液滴径向速度的数目分布越趋向某一狭窄速度段,且喷雾压力越大,这种分布特征越明显。     

喷雾干燥成型法制备催化裂化催化剂的球形度影响因素分析

分析了催化裂化催化剂喷雾干燥过程中的不同形貌微球成型机理,考察了喷雾干燥成型工艺和催化剂浆液特性对催化剂球形度的影响。结果表明,在热空气的进出口温差约为260 ℃、载气量为1 500~2 000 m3/h、雾化机转速为5 000~14 000 r/min的喷雾干燥成型条件下,催化剂球形度相对较高,不小于0.85;通过增加催化剂浆液总固物质量分数、降低浆液黏度、优化使用黏结剂的类型及其用量,有益于提升催化剂球形度;通过综合优化喷雾干燥成型工艺和催化剂制备过程,可制备出具有实心结构、表面圆整的微球催化剂,所制备的原位晶化催化剂和助催化剂的球形度均大于0.90,半合成催化剂的大于0.88。     

深部软岩巷道锚喷注强化承压拱支护机理及其应用

针对深部软岩巷道围岩总变形量大、收敛速率快、持续变形时间长以及支护系统损毁等矿压显现特点,分析了复杂应力场和高渗透压作用下的变形破坏机制,并结合深部巷道的"应力恢复、围岩增强、固结修复和主动卸压"控制原则,提出了集密集高强锚杆承压拱、厚层钢筋网喷层拱和滞后注浆加固拱于一体的锚喷注强化承压拱支护技术,并阐明其成拱及强化支护的机理。结合现场地质生产条件采用理论计算、数值模拟和工程类比法综合确定试验巷道围岩支护方案,并进行现场应用。现场实践表明,采用锚喷注强化承压拱支护技术后,巷道围岩总体变形量较小,围岩收敛率从扩刷修复前的2.6 mm/d降至0.56 mm/d,且支护系统亦无开裂损毁现象发生,实现了对深井软岩巷道的有效控制。     

Structural and opto-electrical properties of pyrolized ZnO-CdO crystalline thin films

A series of ZnO-CdO thin films of different molar ratios of Zn and Cd have been deposited on glass substrate at substrate temperature ~ 360 ℃ by the spray pyrolysis technique at an ambient atmosphere. X-ray diffraction (XRD) studies confirmed the polycrystalline nature of the film and modulated crystal structures of wurtzite (ZnO) and cubic (CdO) are formed. The evaluated lattice parameters, and crystallite size are consistent with literature. Dislocation density and strain increased in the film as the grain sizes of ZnO and CdO are decreased. The band gap energy varies from 3.20 to 2.21 eV depending on the Zn/Cd ratios in the film. An incident photon intensity dependent I-V study confirmed that the films are highly photosensitive. Current increased with the increase of the intensity of the light beam. The optical conductivity and the optical constants, such as extinction coefficient, refractive index and complex dielectric constants are evaluated from transmittance and reflectance spectra of the films and these parameters are found to be sensitive to photon energy and displayed intermediate optical properties between ZnO and CdO, making it preferable for applications as the buffer and window layers in solar cells.     

High‐Mobility ZnO Thin Film Transistors Based on Solution‐processed Hafnium Oxide Gate Dielectrics

The properties of metal oxides with high dielectric constant (k) are being extensively studied for use as gate dielectric alternatives to silicon dioxide (SiO₂). Despite their attractive properties, these high‐k dielectrics are usually manufactured using costly vacuum‐based techniques. In that respect, recent research has been focused on the development of alternative deposition methods based on solution‐processable metal oxides. Here, the application of the spray pyrolysis (SP) technique for processing high‐quality hafnium oxide (HfO₂) gate dielectrics and their implementation in thin film transistors employing spray‐coated zinc oxide (ZnO) semiconducting channels are reported. The films are studied by means of admittance spectroscopy, atomic force microscopy, X‐ray diffraction, UV–Visible absorption spectroscopy, FTIR, spectroscopic ellipsometry, and field‐effect measurements. Analyses reveal polycrystalline HfO₂ layers of monoclinic structure that exhibit wide band gap (≈5.7 eV), low roughness (≈0.8 nm), high dielectric constant (k ≈ 18.8), and high breakdown voltage (≈2.7 MV/cm). Thin film transistors based on HfO₂/ZnO stacks exhibit excellent electron transport characteristics with low operating voltages (≈6 V), high on/off current modulation ratio (～10⁷) and electron mobility in excess of 40 cm² V^?1 s^?1.     

金属外壳封接用双层玻坯的研制

以BH—G/K玻璃为基体,以添加Al2O3粉的DM—308玻璃为表层区研制出与金属外壳封接的双层玻坯。分析了Al2O3粒度及添加量对熟坯致密化和线收缩率的影响。结果表明,表层区使用添加质量分数为20%和30%0.5μm粒径Al2O3粉的DM—308玻璃可以实现熟坯的匹配收缩,用于UP2113—14外壳熔封。电镀后外壳气密性、绝缘电阻均有数量级提高,玻璃沿引线上爬高度只为BH—G/K玻璃的1/3,显著降低外壳盐雾试验后引线根部易锈蚀和引线受力后绝缘子开裂的风险。     

喷雾热解法制备掺氟的氧化锡透明导电膜

采用喷雾热分解的方法,在片状日用玻璃基材和石英玻璃基材上制得了掺氟氧化锡透明导电薄膜。研究了F 的掺杂量、成膜温度和沉积时间对薄膜方阻 R□和在可见光范围内的平均透过率 T 的影响。实验结果表明,当 NH4F的掺杂量为 SnCl_4·5H_2O 的 32%(质量分数)、成膜温度为 450℃、沉积时间为 15 s 时,可使所得薄膜的方阻 R_□最低,为 10Ω/□,可见光范围内的平均透过率为 80%。