Ce-O和Fe-Ce-O催化剂的固相合成及其CH_4催化燃烧性能

以(NH4)2Ce(NO3)6为原料,选用葡萄糖为络合剂,采用研磨固相法制备了在不同温度下焙烧的氧化铈(Ce-O)和掺杂铁的氧化铈(Fe-Ce-O)催化剂。用X射线衍射法表征了催化剂的结构;用程序升温还原法测试了催化剂的还原性能;考察了经不同温度焙烧后,掺杂铁对Ce-O催化剂的CH4催化燃烧活性的影响。实验结果表明,掺杂铁后的Fe-Ce-O催化剂的粒径变小、还原性能增强、CH4催化燃烧活性提高。经400℃焙烧的Fe-Ce-O催化剂呈现单一的CeO2物相,属立方晶系;经800℃和 1 200℃焙烧的Fe-Ce-O催化剂以CeO2为主要物相,并有少量Fe2O3物相。与未掺杂铁的Ce-O催化剂相比,Fe-Ce-O催化剂具有较高的CH4催化燃烧活性。     

掺杂金属的碳化硼氮的制备及其对柴油中含硫化合物的吸附

用三聚氰胺与硼酸合成了一种具有新形貌的介孔碳化硼氮（CBN）材料,并在其中掺杂Ag、Ni、Cu,合成出掺杂金属的碳化硼氮（M-CBN）。采用N₂吸-脱附、SEM、XRD、NH3-TPD等手段对CBN与M-CBN进行了表征,考察了焙烧温度对CBN的影响及CBN与M-CBN对国V标准柴油中含硫化合物的吸附性能。结果表明,在890℃下焙烧制得的CBN比表面积高达1368 m2/g,3种掺杂不同金属的M CBN比表面积也均在1000 m2/g以上。CBN与M-CBN的形貌均为具有锋利边缘的类台阶状,且其孔径集中分布在3~10 nm之间。吸附过程为可自发进行的放热反应,15℃时的脱硫效果最佳。与CBN相比,M-CBN的总酸性位明显增多,吸附脱硫效果也更为优越,加入质量分数为1.25%的Ag-CBN吸附剂可使国V标准柴油中硫质量分数降至1 μg/g以下。Ag-CBN经4次再生循环使用后,脱硫率没有明显降低。     

基于标准CMOS工艺线性APD倍增区的优化仿真

采用标准CMOS工艺制备的n~+-p-π-p~+结构的线性APD,其倍增区p层的掺杂分布极大地影响着器件的性能.采用Silvaco仿真软件对倍增区p层进行了设计仿真,研究了p层的注入剂量和注入峰值浓度深度对器件特性的影响.仿真结果表明,设定器件增益为50,在p层的最佳注入剂量为1.82×10~(12)/cm~2,峰值浓度深度为2.1μm左右的最佳工艺条件下,器件的工作电压为73.1 V,过剩噪声因子为4.59,过剩噪声指数在0.34~0.45之间(波长λ=800 nm),优于目前已报道的结果.通过工艺的优化,器件的性能可以得到进一步提高.     

Improving Radio Frequency Transmission Properties of Graphene via Carrier Concentration Control toward High Frequency Transmission Line Applications

Graphene has been gradually studied as a high‐frequency transmission line material owing to high carrier mobility with frequency independence up to a few THz. However, the graphene‐based transmission lines have poor conductivity due to their low carrier concentration. Here, it is observed that the radio frequency (RF) transmission performance could be severely hampered by the defect‐induced scattering, even though the carrier concentration is increased. As a possible solution, the deposition of the amorphous carbon on the graphene is studied in the high‐frequency region up to 110 GHz. The DC resistance is reduced by as much as 60%, and the RF transmission property is also enhanced by 3 dB. Also, the amorphous carbon covered graphene shows stable performance under a harsh environment. These results prove that the carrier concentration control is an effective and a facile method to improve the transmission performance of graphene. It opens up the possibilities of using graphene as interconnects in the ultrahigh‐frequency region.     

Improved Thermoelectric Performance of Eco‐Friendly β‐FeSi2–SiGe Nanocomposite via Synergistic Hierarchical Structuring,Phase Percolation,and Selective Doping

A β‐FeSi₂–SiGe nanocomposite is synthesized via a react/transform spark plasma sintering technique, in which eutectoid phase transformation, Ge alloying, selective doping, and sintering are completed in a single process, resulting in a greatly reduced process time and thermal budget. Hierarchical structuring of the SiGe secondary phase to achieve coexistence of a percolated network with isolated nanoscale inclusions effectively decouples the thermal and electrical transport. Combined with selective doping that reduces conduction band offsets, the percolation strategy produces overall electron mobilities 30 times higher than those of similar materials produced using typical powder‐processing routes. As a result, a maximum thermoelectric figure of merit ZT of ≈0.7 at 700 °C is achieved in the β‐FeSi₂–SiGe nanocomposite.     

重碳掺杂p型GaAsSb的GSMBE生长及其特性

以四溴化碳(CBr4)作为碳掺杂源,采用气态源分子束外延(GSMBE)技术生长了InP衬底上晶格匹配的重碳掺杂p型GaAsSb材料.通过改变CBr4压力,研究了掺杂浓度在(1～20)×1019cm-3范围内的掺杂特性,得到的最大掺杂浓度为2.025×1020cm-3,相应的空穴迁移率为20.4cm2/(V·s).研究了不同生长温度对掺碳GaAsSb外延层组分、晶格质量和表面粗糙度的影响,结果表明480℃是生长优良晶格质量的最优温度.     

有n缓冲层SOI RESURF结构的电场分布解析模型

提出了有n缓冲层SOI RESURF结构的电场分布解析模型,采用MEDICI数值仿真,验证了上述模型的正确性。基于所建立的解析模型,获得了缓冲层的最优杂质浓度分布,提出了提高SOI RESURF结构耐压的缓冲层分段变掺杂新结构。     

一种气(Ga)-固(Al掺杂氧化物)-固(Si)掺杂新工艺

针对制造高压晶闸管p型杂质扩散工艺的不足,进行了开管式受主双质掺杂技术的研究.通过大量试验和工艺论证,研制成一种气(Ga) -固(Al掺杂氧化物) -固(Si)掺杂新工艺.经应用证明,该掺杂技术能明显提高器件的电参数一致性、综合性能和成品率,为电力半导体器件研究和生产开辟了一条可行的受主双质掺杂新工艺     

Bi2O3蒸汽掺杂的Ba1—xSixTiO3半导化陶瓷的PTCR效应

施主掺杂的钛酸钡陶瓷的ＰＴＣＲ效应来源于晶界上的钡空位。在Ｂｉ２Ｏ３蒸汽两次掺杂的样品中发现了大于８个量级的ＰＴＣＲ效应。在烧成过程中的Ｂｉ２Ｏ３蒸汽掺杂时，高氧分压下可以产生更高的钡空位浓度，因而样品具有更高的ＰＴＣＲ效应。