Analytic computation of the photocurrent density in a n-6H-SiC/p-Si/n-Si/p-Si0.8Ge0.2 multilayer solar cell

In this work we conceived a model of a multilayer solar cell composed by four layers of opposite conductivities: an n-type 6H-SiC used as a frontal layer to absorb high energy photons (energy gap equals 2.9 eV), a p-type Si layer, an n-type Si layer and a p-type SiGe back layer to absorb low energy photons (Si_0.8Ge_0.2 with an energy gap equal to 0.8 eV). The impurity concentration in every layer of the model is taken equal to 10¹⁷ cm⁻³ to ensure abrupt junctions inside the cell. The optical properties of the separate layers have been fitted and tabulated to be used for thin films devices numerical simulation. We developed the equations giving the minority carrier concentration and the photocurrent density in each abscissa of the model. We used Matlab software to simulate and optimize the layers thicknesses to achieve the maximum photocurrent generated under AM0 solar spectrum. The results of simulation showed that the optimized structure could deliver, assuming 10⁵ cm/s surface recombination velocity, a photocurrent density of more than 53 mA/cm², which represents 88.3% of the ideal photocurrent (59.99 mA/cm²) that can be generated under AM0 solar spectrum.     

燃料性质对加热炉腐蚀结焦的影响及其防治

从加热炉燃料变化情况入手 ,分析了加热炉目前存在的炉管结垢 ,预热器烟气露点腐蚀以及炉体腐蚀等问题。从机理上进行了探讨 ,从而提出了原油脱金属、燃料气脱硫、燃料油优化、化学除垢以及预热器改造等防护措施。     

影响喷气燃料与橡胶相容性的因素

采用几种具有不同初始物理性能及不同丙烯腈含量、不同硫化剂和硫化程度的丁腈橡胶，考察了其配方和物理性能对采用不同工艺条件生产的喷气燃料的相容性。结果表明，喷气燃料与橡胶的相容性不仅与喷气燃料的加工工艺有关，而且与橡胶的组成及其制备工艺有关。采用非加氢工艺生产的喷气燃料与橡胶的相容性好于采用加氢工艺(特别是加氢裂化工艺)生产的喷气燃料。橡胶材料的初始力学性能的好坏并不完全决定其与喷气燃料相容性的好坏，橡胶材料的耐过氧化物侵蚀能力才是影响相容性好坏的主要因素。橡胶的组成和其制备工艺决定了橡胶在喷气燃料中萃取物的数量和组成，不同萃取物的综合作用给相容性带来不同程度的影响。用硫作硫化剂的橡胶虽然原始强度低于用过氧化物作硫化剂的橡胶，但前者与喷气燃料的相容性却远好于后者。     

小剂量辐照小鼠胸腺细胞膜流动性的变化

报道了以茈为荧光探针,探讨小剂量~(60)Co γ射线照射后小鼠胸腺细胞膜流动性的变化。结果表明,剂量在0.25-1.00Gy范围,胸腺细胞膜流动性降低与剂量之间呈明显线性关系。从0.50Gy起,辐照组荧光强度比值I_1/I_2与I_3/I_2与对照组的比较存有显著差异(P<0.05)。提示淋巴细胞膜流动性的变化可作为小剂量辐照早期效应的敏感指标。     

浅论太阳电池在通信工程中的应用

介绍了太阳电池应用的一般要求和太阳能供电系统的组成及运行，给出了工程设计个常用的太阳电池容量计算方法，并提出太阳能供电系统运行维护注意事项。     

Diffusion and influence of Cu on properties of CdTe thin films and CdTe/CdS cells

The effective diffusion coefficients of Cu for thermal and photodiffusion in the CdTe films have been estimated from resistivity versus duration of thermal or photoannealing curves. In the temperature range 60–200°C the effective coefficient of thermal diffusion (D_t) and photodiffusion (D_ph) are described as D_t=7.3×10⁻⁷exp(−0.33/kT) and D_ph=4.7×10⁻⁸exp(−0.20/kT).It is found that the diffusion doping of CdTe thin films by Cu at 400°C results in a sharp decrease of resistivity up to 7 orders of magnitude of p-type material, depending on thickness of Cu film. The comparative study of performance of CdTe(Cu)/CdS and CdTe/CdS cells has been studied. It is shown that the diffusion doping of CdTe film by Cu increases efficiency of CdTe(Cu)/CdS cells from 0.9% to 6.8%. The degradation of photovoltaic parameters of CdTe(Cu)/CdS cell, during testing under forward and reverse bias at room temperature, proceeds at a larger rate than those of CdTe/CdS cell without Cu. The degradation of performance of CdTe(Cu)/CdS cells is tentatively assigned to electrodiffusion of Cu in CdTe, resulting in redistribution of concentration of Cu-related centers in CdTe film and heterojunction region.     

液晶分子附着能和盒间隙对响应时间的影响

通过理论分析和实验研究液晶分子附着能和液晶盒间隙对响应时间(τ0)的影响。用液晶盒有效间隙法和表面动力学方程法两种方法推出分析公式,由这两种方法推出的结果是一致的。实验数据与简化方程τ0-dx基本拟合(其中d是液晶盒的间隙,x是指数)。在两种极端的(极大或极小)附着能极限下,指数x分别接近2和1。这个结论有助于优化液晶显示器件的应用。     

FEM model of the ohmic resistance of IP-SOFCs

In the present work, the ohmic resistance of an integrated planar-SOFC (IP-SOFC) has been evaluated by developing a model whose equations have been solved numerically through an FEM method. The model allows to estimate the distribution of voltage and current density in the cell. A comparison between simulated and experimental data of area specific resistance is reported, which shows satisfactory agreement. The mathematical model has also been used to carry out some parametric studies for optimisation purposes. Indeed, a reduction in cell pitch length and an increase in electrode thickness are predicted to lead to a reduction in ohmic losses in IP-SOFCs.     

NiCoFe/C cathode electrocatalysts for direct ethanol fuel cells

A direct ethanol fuel cell (DEFC), which is less prone to ethanol crossover, is reported. The cell consists of PtRu/C catalyst as the anode, Nafion^® 117 membrane, and Ni–Co–Fe (NCF) composite catalyst as the cathode. The NCF catalyst was synthesized by mixing Ni, Co, and Fe complexes into a polymer matrix (melamine-formaldehyde resins), followed by heating the mixture at 800 °C under inert atmosphere. TEM and EDX experiments suggest that the NCF catalyst has alloy structures of Ni, Co and Fe. The catalytic activity of the NCF catalyst for the oxygen reduction reaction (ORR) was compared with that of commercially available Pt/C (CAP) catalyst at different ethanol concentrations. The decrease in open circuit voltage (V_oc) of the DEFC equipped with the NCF catalysts was less than that of CAP catalyst at higher ethanol concentrations. The NCF catalyst was less prone to ethanol oxidation at cathode even when ethanol crossover occurred through the Nafion^®117 film, which prevents voltage drop at the cathode. However, the CAP catalyst did oxidize ethanol at the cathode and caused a decrease in voltage at higher ethanol concentrations.     

Effect of 8 MeV electron irradiation on electrical properties of CuInSe2 thin films

Radiation damages due to 8 MeV electron irradiation in electrical properties of CuInSe₂ thin films have been investigated. The n-type CuInSe₂ films in which the carrier concentration was about 3×10¹⁶ cm⁻³, were epitaxially grown on a GaAs(0 0 1) substrate by RF diode sputtering. No significant change in the electrical properties was observed under the electron fluence <3×10¹⁶ e cm⁻². As the electron fluence exceeded 10¹⁷ e cm⁻², both the carrier concentration and Hall mobility slightly decreased. The carrier removal rate was estimated to be about 0.8 cm⁻¹, which is slightly lower than that of III–V compound materials.