Carrier backscattering characteristics of strained silicon-on-insulator n-MOSFETs featuring silicon–carbon source/drain regions

This work investigates for the first time, the physics of carrier transport in a sub-90 nm strained silicon-on-insulator (SOI) n-MOSFET with silicon–carbon (Si:C) source/drain (S/D) regions. The insertion of Si:C in the S/D exerts a lateral tensile strain in the transistor channel, leading to appreciable drive current enhancement. Significant improvement in both carrier backscattering r_sat and source injection velocity υ_inj were observed, accounting for the large drive current I_Dsat enhancement in Si:C S/D transistors. This improvement becomes more appreciable as the gate length is reduced. The reduction in r_sat is related to a shorter critical length ℓ₀ for carrier backscattering. On the other hand, the splitting of six-fold degenerate conduction band valleys due to strain-induced effects results in a reduced in-plane transport mass and thus contributes to significant υ_inj enhancement. In addition, the dependence of drive current performance on source injection velocity and ballistic efficiency in a short channel MOSFET is also discussed.     

撬式过滤组合在低温甲醇洗工艺中的应用探讨

气体净化中的低温甲醇洗工艺是近年来脱除酸性气体普遍采用的一种净化工艺。该工艺以其技术成熟、溶剂廉价易得、净化度高、选择性好等特性,被广泛应用于合成氨、合成醇类等行业。甲醇循环液的纯净度是保证低温甲醇洗装置的长周期稳定运行的重要前提。撬式过滤组合被应用于低温甲醇洗工艺,能有效确保甲醇液的洁净度。     

Relation between injection barrier and contact resistance in top-contact organic thin-film transistors

We theoretically investigate the carrier injection into top-contact bottom-gate organic thin film transistors. By means of a two-dimensional drift–diffusion model, we explicitly consider thermionic and tunneling injection in combination with subsequent carrier transport into the device. Based on numerical simulations with this model, we determine the contact resistance as a function of the nominal hole injection barrier height and temperature. Depending on the barrier height or the operating temperature, we find three distinct injection regimes. Our work reveals that in all three regimes self-regulating processes exist due to which the influx of current is adjusted according to the needs of the channel at the given point of operation.     

输尿管镜气压弹道碎石术严重并发症的防治

目的探讨输尿管镜气压弹道碎石严重并发症与预防措施。方法总结分析输尿管镜气压弹道碎石治疗患者的资料,统计并发症的发生和处理情况。结果输尿管穿孔3例,输尿管口损伤2例,输尿管黏膜下假道形成3例,输尿管断裂1例,输尿管全层黏膜撕脱1例。结论输尿管镜下取石术并发症的发生与手术者的技术操作密切相关,正确熟练地操作可有效减少并发症。     

GaAs/AlAs短周期超晶格的静压光致发光研究

在室温和液氮温度下对不同层厚的GaAs/AlAs短周期超晶格在0—50kbar范围内进行了静压光致发光研究。在导带最低能级为类Γ态能级(Ⅰ类超晶格)和类X态能级(Ⅱ类超晶格)两种情况下都得到了类Γ态能级与类X态能级差随层厚的变化。首次直接观察到室温、常压下(GaAs)_(11)(AlAs)_(11)超晶格中类Γ态能级与类X态能级发生交叉。从发光峰的强度随压力的变化求得室温下在类Γ态能级与类X态能级恰好交叉的压力下类X态电子和类Γ态电子到价带空穴的跃迁几率之比从(GaAs)_(17)(AlAs)_(17)的1.4×10~(-4)逐渐增加到(GaAs)_6(AlAs)_6的4.6×10~(-3)。表明类Γ态和类X态间的混合较弱。对实验结果进行了简短的讨论。     

A New Design Methodology for Time-Based Capacitance-to-Digital Converters (T-CDCs)

This paper introduces a 9-bit time-based capacitance-to-digital converter (T-CDC). This T-CDC adopts a new design methodology for parasitic cancellation with a simple calibration technique. In T-CDCs, the input sensor capacitance is first converted into a delay pulse using a capacitance-to-time converter (CTC) circuit; then this delay signal is converted into a digital code through a time-to-digital converter (TDC) circuit. A prototype of the proposed T-CDC is implemented in UMC 0.13 μm CMOS technology. This T-CDC consumes 8.42 μW and achieves a maximum SNR of 45.14 dB with a conversion time of 1 μs that corresponds to a figure of merit (FoM) of 16.4 fJ/Conv.     

Luminescent Efficiency in Single-layer Organic Electrophosphorescent Devices

Based on the charge injection and recombination processes and the triplet-triplet annihilation process, a model to calculate the electro.luminescent（EL） efficiency is presented. The influences of the applied electric field on the injection efficiency, recombination efficiency and electroluminescent efficiency are discussed. It is found that： （1） The injection efficiency is increasing while the recombination efficiency is decreasing with the applied electric field increasing. （2） The EL efficiency is enhanced at low electric field slowly but is decreasing at high electric field with the increase of applied voltage. （3） The EL efficiency is decreasing with the increase of the host-guest molecular distance （R）. So, it is concluded that the EL efficiency in single-layer organic electrophosphorescent devices is dominated by injection efficiency at lower electric field and recombination efficiency at higher electric field.     

变频器RS-485通讯功能在纺织行业的应用

本文主要介绍了DELIXI变频器RS-485通讯功能在浙江萧山某纺织公司空压机站活塞式空气压缩机（以下简称“空压机”）上的节能改造应用过程和RS-485通讯网络的构成，并且给出了用户在现场遇到的各种难题解决方案。从中叙述了变频器的外围设备对恒压供气系统的传动性能、稳定性、可靠性等质鬣指标所起到的作用，并指出了变频器技术服务的重要性。     

不锈钢压力传感器管座

文章介绍了不锈钢压力传感器管座的关键技术和工艺,对管座设计和工艺过程中易出现的难题进行了分析并给出了实现方法及其结果。这种管座在抵御10000PSI的高压下仍能保证高可靠的密封性能,因而适用性特别强。     

一种多晶硅高温压力传感器

制作压力传感器时，在二氧化硅层上淀积多晶硅膜，既可利用优良的机械特性，又可保证压敏电阻与衬底间具有良好的绝缘性，由此可大大提高器件的温度特性。介绍了一种多晶硅压力传感器的原理和设计。实验结果表明，这类传感器具有灵敏度好，精度高等特点，电路工作范围为０－２５０℃，且具有良好的温度稳定性。