用于高速GaAs IC在片检测的电光取样系统

目前直接电光取样技术是在片检测砷化镓高速集成电路内部动态特性的最好方法。我们建立了半导体激光器电光取样系统，测试了梳状信号发生器输出的４３．７ｐｓ的电脉冲信号以及频率５ＧＨｚ的微波信号，并测试了频率３ＧＨｚ的微波信号的位相移动或时间延迟以及铁氧体微波移相器的静态特性曲线，这个系统将被应用于砷化镓高速集成电路内部动态特性在片检测。     

Development of an energy-binned photon-counting detector for X-ray and gamma-ray imaging

The aim of this study is to develop an energy-binned photon-counting (EBPC) detector that enables us to provide energy information of x-rays with a reasonable count statistics. We used Al-pixel/CdTe/Pt semiconductor detectors, which had an active area of 8 mm×144 mm and consisted of 18 modules aligned linearly. The size of a CdTe detector module was 8 mm×8 mm and the thickness of the CdTe crystal was 1 mm. Each module consisted of 40×40 pixels and the pixel size was 200 μm×200 μm. We applied the bias voltage of −500 V to the Pt common electrode. The detector counted the number of x-ray photons with four different energy windows, and output four energy-binned images with pixel depths of 12, 12, 11 and 10 bits at a frame rate of 1200 Hz (300 Hz×4 energy bins). The basic performance of the detector was evaluated in several experiments. The results showed that the detector realized the photon counting rate of 0.4×10⁶ counts/sec/pixel (10⁷ counts/sec/mm²), energy resolution 4.4% FWHM at 122 keV. The integral uniformity of the detector was about 1% and the differential uniformity was about 1%. In addition, the image quality was examined with a resolution chart and step-wedge phantoms made of aluminum and polymethyl methacrylate. And we compared the quality of an acquired image with that acquired with an energy integration detector. The results of these experiments showed that the developed detector had desirable intrinsic characteristics for x-ray photon counting imaging.     

深亚微米MOSFET衬底电流的模拟与分析

利用器件模拟手段对深亚微米ＭＯＳＦＥＴ的衬底电流进行了研究和分析，给出了有效的道长度，栅氧厚度，源漏结深，衬底掺杂浓度以及电源电压对深亚微米ＭＯＳＦＥＴ衬底电流的影响，发现电源电压对深亚微米ＭＯＳＦＥＴ的衬底电流有着强烈的影响，热载流子效应随电源电压的降低而迅速减小，当电源电压降低到一定程度时，热载流子效应不再成为影响深亚微米ＭＯＳ电路可靠性的主要问题。     

半导体器件欧姆接触中的扩散阻挡层

为提高半导体器件欧姆接触的可靠性，一般要在金属化系统中加扩散阻挡层。本文介绍了扩散阻挡层的种类及其特性，并进行了比较和讨论。最后给出了在实际成功应用的例子。     

介质隔离高稳定低噪声对管电路的工艺研究

文章采用先进的全介质隔离、高频低噪声、浅结工艺研制高稳定性低噪声对管电路。该器件具有两管电流放大系数对称性好（hFE=97%)、噪声系数低（NF≤3dB）、隔离度高（g≥40dB）、共模抑制比高（CMRR≥80dB)和截止频率高（fT≥600MHz）等优点。     

Photolithographic Route to the Fabrication of Micro/Nanowires of III–V Semiconductors

Nano/microwires of semiconducting materials (e.g., GaAs and InP) with triangular cross‐sections can be fabricated by “top–down” approaches that combine lithography of high‐quality bulk wafers (using either traditional photolithography or phase‐shift optical lithography) with anisotropic chemical etching. This method gives good control over the lateral dimensions, lengths, and morphologies of free‐standing wires. The behaviors of many different resist layers and etching chemistries are presented. It is shown how wire arrays with highly ordered alignments can be transfer printed onto plastic substrates. This “top–down” approach provides a simple, effective, and versatile way of generating high‐quality single‐crystalline wires of various compound semiconductors. The resultant wires and wire arrays have potential applications in electronics, optics, optoelectronics, and sensing.     

半导体激光器的输出功率控制及输出光信号调制

运用自动控制理论，结合实际的控制系统，介绍了半导体激光器输出功率的稳定控制以及如何在要求输出功率稳定的条件下，对输出光信号进行调制，从而为实际应用半导体激光器中面临的功率稳定性问题，提供了一种行之有效的解决办法。     

Investigation of MOSFET operation in bipolar mode

The work is concerned with the properties of conventional MOSFET in bipolar mode of operation. It is shown that the base current can provide useful information about interface trap density at the Si–SiO₂ interface. The new device characteristics are found promising for use in low-voltage low-power logic circuits.     

外腔半导体激光器的场功率谱和线宽

本文采用低频近似的方法,用半经典理论,给出了外腔半导体激光器的场功率谱和线宽公式,理论分析与实验结果是吻合的。     

Amorphous Silicon 16—bit Array Photodetector^①

An amorphous silicon 16-bit array photodetector with the a-SiC/a -Si heterojunction diode is presented. The fabrication processes of the device were studied systematically. By the optimum of the diode structure and the preparation procedures, the diode with Id< 10 -12 A/mm2 and photocurrent Ip^0.35 A/W has been obtained at the wavelength of 632 nm.